JP2836692B2 - 半導体素子のボーディング用線 - Google Patents

半導体素子のボーディング用線

Info

Publication number
JP2836692B2
JP2836692B2 JP63246398A JP24639888A JP2836692B2 JP 2836692 B2 JP2836692 B2 JP 2836692B2 JP 63246398 A JP63246398 A JP 63246398A JP 24639888 A JP24639888 A JP 24639888A JP 2836692 B2 JP2836692 B2 JP 2836692B2
Authority
JP
Japan
Prior art keywords
wire
ultrafine
bonding
gold
spool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP63246398A
Other languages
English (en)
Other versions
JPH0294534A (ja
Inventor
祐人 伊賀
健一 栗原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP63246398A priority Critical patent/JP2836692B2/ja
Publication of JPH0294534A publication Critical patent/JPH0294534A/ja
Application granted granted Critical
Publication of JP2836692B2 publication Critical patent/JP2836692B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/45693—Material with a principal constituent of the material being a solid not provided for in groups H01L2224/456 - H01L2224/45691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/45694—Material with a principal constituent of the material being a liquid not provided for in groups H01L2224/456 - H01L2224/45691
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、トランジスタ,IC,LSIなどの半導体素子の
チップ電極と外部リード部との接続に使用されるボンデ
ィング用極細線、詳しくはAu又はAuに添加元素を含有さ
せたAu合金からなり、アニール工程を経て製造されたボ
ンディング用金極細線に関する。
［従来の技術］ この種ボンディング用の金極細線はスプールに所定長
を巻込んだ状態でワイヤボンダーに取付け使用される
が、旧来においては50〜100mの長さの金極細線をスプー
ルに整列巻きした一層状の巻線形態のものが一般的であ
った。
ところが、高速自動式ボンディングマシンの開発に伴
いボンディング速度が速くなると共に金極細線の使用量
が増加したため、旧来の50〜100m巻線スプールでは交換
頻度が早くなってボンディングの作業性及び生産性が低
下し、スプールに対してより長尺に巻き込むことが要望
されていた。
そこで、ボンディングマシンに対する装着のための汎
用性を確保するべく、スプール形状を変更せずに巻線長
さを増長させるには、旧来通りの整列巻きで多層状とし
たものでは、巻きくずれの恐れを生じる。
本願出願人は、金極細線をクロス巻き多層状とするこ
とで前記整列巻き多層状で生じる不具合を解消し、スプ
ールの交換頻度を少なくしてボンディングの作業性及び
生産性を向上し得る技術を先に提案した（特開昭56−13
6764号公報）。
［発明が解決しようとする課題］ 一方近年、ボンディング作業の作業性及び生産性のさ
らなる向上のために、金極細線をより長尺（1,000m程度
以上）にスプールに巻き込むことが要望されている。
このような要望に対し、スプールに対する巻線形態を
さらに多層巻とした場合、アニール工程を経た金極細線
の解きほぐれが円滑に行われず、解きほどかれる金極細
線が下層の線上でこすられて折れ（曲り）が発生する等
の要因により、ボンディング時において変形ループ（第
２図（ａ））が発生し、ひいては半導体使用時における
ショートの要因となる。これは、アニール工程を経た金
極細線はその表面が酸化されることなく活性化し、上層
と下層の金極細線同士がくっつきやすくなってスプール
から解きほぐれにくくなることに起因すると考えられ
る。
このような不具合への対応として、金極細線の表面に
界面活性剤（ポリオキシエチレンアルキルエーテル，ポ
リオキシエチレンアルキルエーテルサルフェート）を塗
布し、平均膜厚が0.5μｍ（50000Å〜50Å）の被膜を形
成することも考えられる（特開昭59−167044号公報）。
しかし上記膜厚が厚い場合には、スプールからの解き
ほぐれの際に効果がみられるが、ワイヤボンダーの機械
的部分における滑動性の障害が発生し、ネック切れや接
着不良の原因となることが判明した。
すなわち第１図に示す如く、金極細線（10）はスプー
ル（１）から解きほどかれてガラス管（２），ガイド部
材（３）（４）（５）（６）（７）及びクランパー
（８）（８′）を通してキャピラリー（９）に繰出され
るのが、膜厚が厚い場合、長時間のボンディング作業に
より金極細線（10）の表面に塗布した界面活性剤（潤滑
剤）がクランパー（８）（８′）及びキャピラリー
（９）に付着する結果、該部分の線通路が狭まり金極細
線（10）の滑動性を阻害し、第２図（ｂ）の如き変形ル
ープが発生してネック切れ、接着不良の原因となる。
上記弊害を除去するためには、クランパー（８）
（８′）及びキャピラリー（９）を頻度多く洗浄作業を
しなければならず、ボンディング作業の中断をきたし作
業性が低下することになり好ましくない。
他方、本願出願人は、特開昭62−78862号公報に記載
されるように、ボンディング用銅線に膜厚平均20〜500
Åの界面活性被膜を形成する技術を先に提案したがこの
先行技術は、表面が酸化膜で覆われやすい道線を対象と
し、該酸化膜で覆われた銅線が、ボール形状が不良にな
ってボンディングフィルム覆が生じやすくなると共に、
滑りやすいためスプールに巻込んだ際ゆるみが生じ易く
その結果巻込み状態が崩れてからみ易くなる事を防止す
るためのものである。よって、表面が酸化されることな
く活性化し、スプールに巻込んだ際くっつき易くスプー
ルから解きほぐれにくくなるというアニール工程を経た
金極細線への適応は困難を強いるものであった。
而して本発明は斯る従来事情に鑑み、アニール工程を
経てくっつき易くなり解きほぐれにくくなるボンディン
グ用の金極細線において、従来より長尺にスプールに巻
き込むべく多層巻の形態とした場合でも、その解きほぐ
れを円滑にして1,000m使用時における変形ループ発生率
を低減せしめると共に、ワイヤボンダーの機械的部分に
おける滑動性を確保させてネック切れ、接着不良を防止
し、ボンディング作業の作業性を高めると共に半導体素
子の信頼性を向上して、半導体装置の量産に寄与し得る
ボンディング用金極細線を提供することを目的とする。
［課題を解決するための技術的手段］ 上記目的を達成するために本発明は、アニール工程を
経て製造されることから表面が活性化してくっつき易く
なり、スプールに対して多層巻きに巻き込んだ場合解き
ほぐれにくくなる金極細線の表面に、潤滑防錆剤（潤滑
機能と防錆機能を加味した化合物）を塗布してその平均
膜厚が３〜30Åの皮膜を形成し、スプールにクロス多層
巻きにした半導体素子のボンディング用金極細線であ
る。
金極細線はAu又はAu合金からなる極細線であって、線
径は20〜50μφである。潤滑防錆剤は脂肪酸アミド，脂
肪酸エステルを用いることが好ましく、その溶剤には
水，アルコール，フレオン等を用いる。
上記潤滑防錆剤を溶剤中に所定濃度混入させて塗布液
を生成し、この塗布液中にアニール工程を経た金極細線
を浸漬法により通過させて該線の表面に均一に塗布し、
溶媒を蒸発させて単分子層の被膜を形成する。
しかし上記潤滑防錆剤を全て単分子層に塗布形成する
ことは必ずしも容易ではなく、部分的に数分子層となる
こともある。
上記被膜の膜厚が３Å未満の場合は所望の解きほぐれ
性が得られず、変形ループ（第２図（ａ））の発生とい
う従来不具合を解消し得ない。
又、上記膜厚が30Åを越える場合は、ワイヤボンダー
の前記クランパー（８）（８′）及びキャピラリー
（９）の汚れが早く、ボンディング時の変形ループ（第
２図（ｂ））発生までが早い。
本発明は上述の構成を採用することで、クロス多層巻
により1,000m程度以上の長尺巻の巻線形態とし、潤滑防
錆塗布による被膜形成により、アニール工程を経た金極
細線表面を解きほぐれやすい状態とし、且つその平均膜
厚を３〜30Åとすることにより、被膜がクランパ，キャ
ピラリ内面に付着して金極細線の滑動を阻害する恐れを
なくして、従来より長尺巻としながら変形ループ発生を
低減する。
［実施例］ 金線として線径25μφの極細線を用い、潤滑防錆剤と
して脂肪酸アミド，脂肪酸エステルを用いてボンディン
グ用金極細線を製造した。すなわち、アニール工程を経
た前記極細線を脂肪酸アミド水溶液，脂肪酸エステル水
溶液中に通して該溶液を極細線表面に塗布、乾燥させて
被膜を有する金極細線を連続的に製造した。
上記金極細線は被膜の平均膜厚を異にした複数の試料
を製造し、各試料はその所定長を夫々第１図に示すスプ
ール（１）にクロス多層巻で巻取り、それぞれを使用し
てボンディング作業を行ない、各試料毎に1,000m使用時
における変形ループ発生率及びキャピラリー（９）の汚
れ発生までの使用線長を測定した。
その測定結果を、潤滑防錆剤を塗布しない従来の金極
細線（試料No.13）の場合と共に次表に示す。
上記測定結果より潤滑防錆剤の平均膜厚:3〜30Åの範
囲を選定した。
［効果］ 本発明によれば、アニール工程を経て製造されたこと
からスプールに巻込んだ際に解きほぐれにくくなるボン
ディング用の金極細線を、クロス多層巻きにより従来よ
りも長尺に巻き込んだ巻線形態としながら、スプールか
らの解きほぐれを円滑にすると共に、ワイヤボンダーの
機械的接触部分（クランパ、キャピラリ内面）との滑動
性を高めることができる。
従って、スプールの交換頻度を低減すると共に、第２
図（ａ），（ｂ）に示すようなボンディングループの変
形ループの発生やネック切れ，接着不良等の発生を防止
して半導体素子の信頼性及び製品歩留りの向上を図ると
ともに、ワイヤボンダーのキャピラリー等の洗浄回数の
増大を抑え、高速自動式ボンディングマシンでのワイヤ
ボンディング作業の作業性を向上することができる。
よって、半導体装置の量産に対応し得るボンディング
用金極細線として、この種技術分野で好ましく用いる事
が出来る。
【図面の簡単な説明】
第１図はボンディング用金極細線の使用状態を示す斜視
図、第２図はボンディングループを示し、その（ａ）
（ｂ）は変形ループ，（ｃ）は正常ループを示す。
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−78862（ＪＰ，Ａ) 特開 昭59−167044（ＪＰ，Ａ) 特開 昭54−144870（ＪＰ，Ａ) 特開 昭62−139217（ＪＰ，Ａ) 堀口 博「潤滑油化学」（昭和36−２ −15 三共出版株式会社）第305〜306ペ ージ

Claims (2)

    (57)【特許請求の範囲】
  1. 【請求項１】アニール工程を経た金極細線の表面に潤滑
    防錆剤を塗布し平均膜厚が３〜30Åの被膜を形成してス
    プールにクロス多層巻きにした半導体素子のボンディグ
    用金極細線。
  2. 【請求項２】上記潤滑防錆剤が脂肪酸アミド又は脂肪酸
    エステルである請求項第１項記載の半導体素子のボンデ
    ィング用金極細線。
JP63246398A 1988-09-30 1988-09-30 半導体素子のボーディング用線 Expired - Fee Related JP2836692B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63246398A JP2836692B2 (ja) 1988-09-30 1988-09-30 半導体素子のボーディング用線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63246398A JP2836692B2 (ja) 1988-09-30 1988-09-30 半導体素子のボーディング用線

Publications (2)

Publication Number Publication Date
JPH0294534A JPH0294534A (ja) 1990-04-05
JP2836692B2 true JP2836692B2 (ja) 1998-12-14

Family

ID=17147920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63246398A Expired - Fee Related JP2836692B2 (ja) 1988-09-30 1988-09-30 半導体素子のボーディング用線

Country Status (1)

Country Link
JP (1) JP2836692B2 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2300752B (en) * 1995-05-12 1999-12-15 Tanaka Electronics Ind Method of manufacturing bonding wire for semiconductor device
JP5023706B2 (ja) * 2007-01-11 2012-09-12 住友金属鉱山株式会社 ボンディングワイヤとその製造方法
JP4791571B2 (ja) * 2009-11-26 2011-10-12 田中電子工業株式会社 超音波ボンディング用アルミニウムリボン

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6278862A (ja) * 1985-09-30 1987-04-11 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
堀口 博「潤滑油化学」（昭和３６−２−１５ 三共出版株式会社）第３０５〜３０６ページ

Also Published As

Publication number Publication date
JPH0294534A (ja) 1990-04-05

Similar Documents

Publication Publication Date Title
JP2006303492A (ja) 半導体パッケージ用のリードフレーム
JP5546670B1 (ja) 超音波接合用コーティング銅ワイヤの構造
JP2836692B2 (ja) 半導体素子のボーディング用線
JP3210445B2 (ja) 半導体素子のボンディング用ワイヤの製造方法
JP2015005576A (ja) 超音波接合用純銅合金ワイヤの断面構造
TWI509089B (zh) Sectional Structure of Pure Copper Alloy Wire for Ultrasonic Jointing
WO2012117636A1 (ja) ボンディングワイヤ及びその製造方法
JP4791571B2 (ja) 超音波ボンディング用アルミニウムリボン
JP3658668B2 (ja) 半導体素子用ボンディングワイヤおよびその製造方法
JP2768021B2 (ja) 半導体装置用ボンディングワイヤおよびその製造方法
JPH0211016B2 (ja)
JPH04363036A (ja) 半導体装置用ボンディングワイヤおよびその製造方法
JPH08321525A (ja) ボンディングワイヤの製造方法
JP3350920B2 (ja) ボンディングワイヤおよびその製造方法
JPH08288331A (ja) 半導体装置用ボンディングワイヤ及びその製造方法
JP5430540B2 (ja) ボンディングワイヤ及びその製造方法
JP2005056899A (ja) 高い直進性が維持されるＡｕ極細線の巻き替え方法
JP2007158082A (ja) 半導体素子用ボンディングワイヤおよびその製造方法
TW201716310A (zh) 半導體裝置用接合線的捲線構造
JP2003031607A (ja) 半導体素子用ボンディングワイヤおよびその製造方法
JPH0124932Y2 (ja)
JPH08321522A (ja) ボンディングワイヤの製造方法
JP2910433B2 (ja) 極細線及び極細線冷却装置
JP5665956B2 (ja) ボンディングワイヤ及びその製造方法
JP2001105172A (ja) 半田材料及びダイボンディング方法

Legal Events

Date Code Title Description
S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees