JP2785254B2 - Gallium nitride based compound semiconductor light emitting device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device using a gallium nitride compound semiconductor, and more particularly to a forward voltage (Vf).
The present invention relates to a gallium nitride-based compound semiconductor light emitting device having a low light emission and high light emission output.

2. Description of the Related Art GaN, GaAlN, InGaN, In
Gallium nitride-based compound semiconductors such as AlGaN have direct transitions and change in band gap from 1.95 eV to 6 eV. Therefore, they are promising as materials for light-emitting elements such as light-emitting diodes and laser diodes. At present, a light-emitting element using this material includes a so-called MIS in which a high-resistance i-type gallium nitride-based compound semiconductor doped with a p-type dopant is laminated on an n-type gallium nitride-based compound semiconductor.
A blue light emitting diode having a structure is known.

As an example of a light emitting device having a MIS structure, Japanese Patent Application Laid-Open Nos. 3-252176, 3-252177 and 3-252178 disclose an n-type gallium nitride-based compound semiconductor layer as an i-layer. A technique of forming a two-layer structure of an n-layer having a low carrier concentration and an n ⁺ layer having a high carrier concentration from the closest order, and / or the impurity concentration of the i-layer is set to n
There is disclosed a technique of forming a two-layer structure of an i-layer having a low impurity concentration and an i ⁺ layer having a high impurity concentration in order from the layer closest to the layer. However, these light-emitting elements having the MIS structure have very low light-emitting intensity and light-emission output, and have a high forward voltage (Vf) of 20 V or more because the high-resistance i-layer is used as the light-emitting layer. Was not enough.

On the other hand, as an idea of a light emitting device using a gallium nitride-based compound semiconductor having a pn junction, for example, Japanese Patent Application Laid-Open No. Sho 59-228776 discloses GaAl
An LED having a double hetero structure in which an N layer is a light emitting layer has been proposed. In Japanese Patent Application Laid-Open No. 4-209577,
An LED having a double hetero structure using non-doped InGaN as a light emitting layer has been proposed. In addition to these publications, a number of structures have conventionally been proposed for a light emitting device having a double hetero structure using a pn junction. However, these techniques have not been realized because it is difficult to make the gallium nitride-based compound semiconductor layer p-type.

As a technique for realizing a pn junction light-emitting device having an improved light-emitting output by changing a high-resistance i-type to a low-resistance p-type, Japanese Patent Application No. 3-357046 discloses an i-type. A technique has been proposed in which a gallium nitride-based compound semiconductor layer is annealed at 400 ° C. or higher to make it a low-resistance p-type.

[0005]

SUMMARY OF THE INVENTION We have made a gallium nitride-based compound semiconductor into a p-type semiconductor by the above-mentioned technology and realized for the first time a double heterostructure light emitting device using a pn junction. In the double hetero structure, it has been found that current does not flow uniformly between the n-type layer and the p-type layer, and the gallium nitride-based compound semiconductor does not emit light uniformly in the plane. Further, according to our experiments, a large difference in light emission output appears due to factors such as the combination of the gallium nitride-based compound semiconductors to be stacked and the composition ratio. In addition, the ohmic property of the electrode formed on the p-type gallium nitride-based compound semiconductor depends on factors such as the crystallinity and type of the p-type layer, and the forward voltage (Vf) for a predetermined forward current is reduced. And the luminous efficiency decreases.

Accordingly, the present invention has been made to solve the above problems, and a first object of the present invention is to provide a gallium nitride-based compound by providing a novel double heterostructure light emitting device. A second object is to make the semiconductor layer emit light uniformly in the plane and improve the light emission output of the light emitting element.
f is reduced, and the luminous efficiency is improved.

[0007]

Means for Solving the Problems We have further improved a light emitting device having a double hetero structure in which a specific gallium nitride-based compound semiconductor is used as a light emitting layer, and an n-type cladding layer and / or a p-cladding layer sandwiching the light emitting layer. It has been found that the above problem can be solved by adjusting the carrier concentration. That is, the gallium nitride-based compound semiconductor light-emitting device of the present invention, between the n-type gallium nitride-based compound semiconductor layer and a p-type gallium nitride-based compound semiconductor layer, n-type In _X Ga _1-X N
A gallium nitride-based compound semiconductor light-emitting device having a double hetero structure including a (0 <X <1) layer as a light-emitting layer,
The n-type gallium nitride-based compound semiconductor layer, and / or the carrier concentration of the p-type gallium nitride-based compound semiconductor layer, is adjusted to become smaller as it approaches the In _X Ga _1-X N layer, wherein Use of p-type gallium nitride
The compound semiconductor layer is a p ⁺ -type GaN layer having a high carrier concentration.
And p-type G having a lower carrier concentration than the p ⁺ -type GaN layer
characterized in that consisting of _{a 1-Z Al Z N (} 0 <Z <1) layer. In the present invention, as described later,
The p-type gallium nitride-based compound semiconductor layer of the two-layer structure
It is not necessary to use only three layers or more.
You may.

FIG. 1 is a schematic sectional view showing the structure of a light emitting device according to one embodiment of the present invention. An n-type gallium nitride compound semiconductor layer (hereinafter, referred to as an n clad layer) is provided on a substrate 1.
A stack of an n ⁺ -type GaN layer 2 and an n _- type Ga _{1 -Y} Al _Y N layer 3 having a lower carrier concentration than the n ⁺ GaN layer 2;
The In _X Ga _1-X N layer 4 is laminated as a light-emitting layer thereon, the p-type gallium nitride-based compound semiconductor layer on a (hereinafter, referred to as p-cladding layer.), P-type Ga _1-Z Al _Z N Layer 5
When, and a p-type Ga _1-Z Al _Z N double heterostructure formed by laminating a large p ⁺ -type GaN layer 6 of the carrier concentration in the order than the layer.

Sapphire, SiC, Si, Z
Although a material such as nO is used, sapphire is usually used. Before growing the n ⁺ GaN layer 2, a buffer layer made of GaN, AlN, or the like may be grown on the substrate 1.

In FIG. 1, the n-cladding layer has a two-layer structure in which an n ⁺ -type GaN layer 2 and an n-type Ga _1-Y Al _Y N layer 3 are laminated. In particular, this layer has a two-layer structure. No need,
As long as the carrier concentration of the n-cladding layer is adjusted to be smaller as approaching the light-emitting layer 4, it is needless to say that a multilayer film structure in which three or more n-cladding layers are stacked may be used. Preferably, the first layer to be grown is made of n ⁺ -type GaN having the highest carrier concentration, whereby the crystallinity becomes the best. Therefore, n _- type Ga _{1 -Y} Al _Y grown on the n ⁺ -type GaN layer The crystallinity of the N layer is improved, and the light emission output of the light emitting element is improved. The carrier concentration of the n-cladding layer is determined by doping Si, Ge, Se,
It can be changed by appropriately changing the doping amount of an n-type dopant such as Te, C, etc., and the carrier concentration is from 1 × 10 ¹⁶ / cm ³ to 1 × 10
It is preferable to adjust to a range of ²² / cm ³ .

[0011] emitting layer 4 is an n-type In _X Ga _1-X N, the X value is not particularly limited as greater than 0, 0 <X <0.5
It is preferable to adjust the range. As the X value increases, the emission color shifts from the short wavelength side to the long wavelength side, and can be changed to red near the X value of 1. However, when the X value is 0.5 or more, it is difficult to obtain InGaN having excellent crystallinity, and it is difficult to obtain a light emitting element having excellent luminous efficiency. Therefore, the X value is preferably less than 0.5.

The n-type In _x Ga ₁ -xN layer 3 has the property of becoming n-type even if it is non-doped. However, the n-type dopant or the n-type dopant and Zn, Mg, Be, C
It is more preferable to dope with a p-type dopant such as a, Sr, and Ba to obtain an n-type. FIG. 2 shows that Zn is 1 × 10 ¹⁸
/ Cm ³ and doped n-type In0.15Ga0.85N layer, the He-Cd laser of Zn to 1 × 10 ¹⁹ / cm ³ and Si in a 5 × 10 ¹⁹ / cm ³ doped with n-type In0.15Ga0.85N layer FIG. 4 is a diagram showing photoluminescence (PL) measured at room temperature by irradiating with, and comparing their emission intensities. The spectrum intensity of the InGaN layer doped only with Zn is 10 times the actual intensity. As shown in this figure, the PL spectrum (b) of n-type InGaN doped with Zn alone is lower than that of n-type InGaN doped with Si and Zn.
In the PL spectrum (a) of nGaN, the emission intensity of (a) is 10 times or more higher than that of (a), and n-type InG is obtained by simultaneously doping an n-type dopant and a p-type dopant.
An element using the aN layer as the light emitting layer has the highest light emission output. In0.1 doped with only Si at 1 × 10 ¹⁹ / cm ³
The emission spectrum of the 5Ga0.85N layer has an emission peak near 410 nm, and the emission intensity is about 1/2 of (a).
Met.

In FIG. 1, a p-type cladding layer is a p-type Ga
A _1-Z Al _Z N layer 4, although a two-layer structure of a p ⁺ -type GaN layer 5, similarly to the n-cladding layer is not particularly necessary to make this layer a two-layer structure, the p-cladding layer If the carrier concentration is adjusted to be smaller as approaching the light emitting layer 4, a multilayer film structure in which three or more p-cladding layers are stacked may be used. Preferably, a layer forming an electrode is made of p ⁺ -type GaN having the highest carrier concentration, whereby a favorable ohmic contact with the electrode material can be obtained, Vf of the light-emitting element can be reduced, and luminous efficiency can be improved. . The carrier concentration of the p-cladding layer can be changed by appropriately changing the doping amount of the p-type dopant, and the carrier concentration can be changed to 1 × 10 ¹⁶ / cm ^3.
It is preferable to adjust to a range of 1 × 10 ²² / cm ³ .

Further, as described above, the p-cladding layer is annealed at a temperature of 400 ° C. or more, as disclosed in Japanese Patent Application No. 3-357046, which has been filed earlier. A p-type can be obtained, and the light emission output of the light emitting element can be improved.

[0015]

The operation of the light emitting device of the present invention will be described with reference to FIG. When a current is applied to the positive electrode 8 and the negative electrode 7, the current spreads uniformly in the p ⁺ -type GaN layer 6 with a high carrier concentration. When the current value is increased and a certain electric field is applied, p ⁺ type G
The current spread to the aN layer 6 is p-type Ga with a low carrier concentration.
_The In _x Ga ₁ -xN layer 3 can be uniformly emitted to the _1-Z Al _Z N layer, and can emit light uniformly. there is a similar effect also for n cladding layer, an n-cladding layer n ⁺ -type GaN layer 2
And the n-type Ga _1-Y Al _Y N layer 3,
_A uniform current flows through the XGa ₁ -XN layer 3 to obtain a uniform light emission, thereby increasing the light emission output.

Further, by limiting the layer having the highest carrier concentration in the n-cladding layer to GaN, the crystallinity of the n-type Ga _1-Y Al _Y N layer laminated thereon is improved and the crystallinity is improved. As a result, the light emission output can be increased.

By limiting the layer having the highest carrier concentration in the p-cladding layer to GaN, the p ⁺ -type G
Ohmic properties with the positive electrode formed on the aN layer are improved, and Vf can be reduced to improve luminous efficiency.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing a light emitting device of the present invention by metal organic chemical vapor deposition will be described.

Example 1 A well-washed sapphire substrate was set in a reaction vessel.
After sufficiently replacing the inside of the reaction vessel with hydrogen, the temperature of the substrate is increased to 1050 ° C. while flowing hydrogen to clean the sapphire substrate.

Subsequently, the temperature was lowered to 510 ° C., and hydrogen was used as a carrier gas, and ammonia and TMG were used as source gases.
Using (trimethylgallium), a buffer layer made of GaN is grown on a sapphire substrate to a thickness of about 200 angstroms.

After the growth of the buffer layer, only TMG is stopped, and the temperature is increased to 1030 ° C. When the temperature reaches 1030 ° C., an N ⁺ -type GaN layer doped with Si is grown to 3.5 μm using TMG and ammonia gas as source gases and silane gas as a dopant gas. The carrier concentration of this Si-doped n ⁺ GaN layer was 1 × 10 ¹⁹ / cm ³ .

Subsequently, the flow rate of the silane gas is reduced,
An n-type GaN layer with a carrier concentration of 1 × 10 ¹⁸ / cm ³
grow by μm. Thus, the n-cladding layer has a two-layer structure with different carrier concentrations.

After the n-type GaN layer is grown, the source gas and the dopant gas are stopped, the temperature is set to 800 ° C., the carrier gas is switched to nitrogen, TMG and TMI (trimethyl indium) and ammonia are used as the source gas, and DEZ (DEZ is used as the dopant gas. Using diethyl zinc) and silane gas, Z
An n-type In0.15Ga0.85N layer doped with n and Si is grown to 100 angstroms.

Next, the source gas and the dopant gas are stopped,
The temperature was raised again to 1020 ° C. and T
MG, ammonia, Cp2Mg as dopant gas
(Cyclopentadienyl magnesium) and Mg
Is grown to a thickness of 0.2 μm.

Subsequently, the flow rate of Cp2Mg gas is increased,
P ⁺ -type GaN doped with more Mg than p-type GaN layer
The layer is grown 0.3 μm. Thus, the p-cladding layer has a two-layer structure with different carrier concentrations.

After the growth of the p ⁺ -type GaN layer, the substrate is taken out of the reaction vessel and subjected to an annealing apparatus in a nitrogen atmosphere at 70 ° C.
Annealing is performed at 0 ° C. for 20 minutes to further reduce the resistance of the p-type GaN layer and the p ⁺ -type GaN layer. The carrier concentration of the p-type GaN layer is 1 × 10 ¹⁶ / cm 3, and p ⁺ GaN
The carrier concentration of the layer was 1 × 10 ¹⁷ / cm ³ .

The p-cladding layer, n-type In0.15Ga0.85N layer and n-type Ga
A part of the N layer is removed by etching, and n ⁺ -type GaN
The layers were exposed, ohmic electrodes were provided on the p ⁺ -type GaN layer and the n ⁺ -type GaN layer, and the chip was cut into a 500 μm square chip. And uniform light emission is obtained.
At 0 mA, a Vf of 4.0 V, an emission output of 700 μW, an emission wavelength of 490 nm, and a luminance of 1.1 cd were obtained.

Example 2 In Example 1, when growing an n-type GaN layer, TMA (trimethylaluminum) was newly added to the raw material gas.
Similarly, a Si-doped n-type Ga0.9Al0.1N layer having a carrier concentration of 1 × 10 ¹⁸ / cm ³ is grown to 3.5 μm.

Further, when growing a p-type GaN layer, TMA (trimethylaluminum) is newly added to the source gas, and a Mg-doped p-type Ga0.9Al0.1N layer having a carrier concentration of 1 × 10 ¹⁶ / cm ³ is added to the p-type GaN layer. Growing by 2 μm.

Except for the above, when a blue light emitting diode was obtained in the same manner as in Example 1, the same uniform light emission was obtained, and Vf was 4.0 V at 20 mA and the light emission output was 700 μm.
W, emission wavelength: 490 nm, and luminance: 1.1 cd.

[Embodiment 3] In Embodiment 1, the n-cladding layer was formed with a carrier concentration of 1 × 1.
A blue light-emitting diode was obtained in the same manner except that one Si-doped n-type GaN layer having a thickness of 0 ¹⁸ / cm ³ and a film thickness of 4 μm was obtained. Output 500μW, emission wavelength 490n
m, and the luminance was 1 cd.

Example 4 In Example 1, the p-cladding layer was formed with a carrier concentration of 1 × 1.
A blue light-emitting diode was obtained in the same manner as above except that one Mg-doped p ⁺ -type GaN layer having a thickness of 0 ¹⁷ / cm ³ and a thickness of 0.5 μm was obtained. 2V, emission power 500μW, emission wavelength 49
It was 0 nm and the luminance was 1 cd.

Fifth Embodiment In the first embodiment, the p-cladding layer has a carrier concentration of 1 × 1.
0 ¹⁶ / cm ³ , 0.2 μm thick Mg-doped p-type Ga 0.9A
A blue light emitting diode was obtained in the same manner except that a single 0.1 N layer was used.
At mA, Vf was 10 V, light emission output was 500 μW, light emission wavelength was 490 nm, and luminance was 1 cd. The reason why Vf increased was that the ohmic property deteriorated because the p-cladding layer was made of GaAlN.

[0034]

As described above, the gallium nitride-based compound semiconductor light-emitting device of the present invention has a pn junction double heterostructure using n-type InGaN as a light-emitting layer. The luminous efficiency and luminous output are significantly increased as compared with the device. Also preferably, n-type InG
If the aN layer is an n-type doped with a p-type dopant and an n-type dopant, the light emission output further increases.

Further, in the light emitting device of the present invention, the carrier concentration of the n-cladding layer and / or the p-cladding layer sandwiching the InGaN layer is reduced as it approaches the active layer of InGaN, so that the entire active layer is uniformly formed. Current flows, and uniform light emission is obtained. In order to maximize the light emission output of the light emitting element, it is preferable that both the n-cladding layer and the p-cladding layer have the above structure, but either one of them may be used. By changing the cladding layer in this manner, the light emitting output of the light emitting element can be remarkably improved. In addition, when the electrode forming layer of the p-cladding layer is preferably a p + GaN layer, ohmic properties with the electrodes are improved, Vf is reduced, and luminous efficiency can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing the structure of a gallium nitride-based compound semiconductor light emitting device according to one embodiment of the present invention.

FIG. 2 is a diagram showing a comparison of photoluminescence intensities of an n-type InGaN layer depending on a difference in dopant.

[Explanation of symbols]

1 ··· Substrate 2 ··· n
⁺ -Type GaN layer 3... N-type Ga _1-Y Al _Y N layer 4.
-Type In _x Ga ₁ -x N layer 5 ··· p-type Ga _{1 -Z} Al _Z N layer 6 ··· p
⁺ Type GaN layer 7, 8

Claims (4)

(57) [Claims] 1. An n-type gallium nitride-based compound semiconductor layer and p-type
N-type In _x between the gallium nitride compound semiconductor layer
A gallium nitride-based compound semiconductor light-emitting device having a double hetero structure comprising a Ga _1-X N (0 <X <1) layer as a light-emitting layer, wherein the n-type gallium nitride-based compound semiconductor layer and / or the p-type the carrier concentration of the type gallium nitride-based compound semiconductor layer, is adjusted to become smaller as it approaches the in _X Ga _1-X N layer, the p-type nitride gully
-Based compound semiconductor layers are p ⁺ -type with high carrier concentration
GaN layer and carrier concentration lower than p ⁺ -type GaN layer
There p-type _{Ga 1-Z Al Z N (} 0 <Z <1) gallium nitride, characterized in that it consists of a layer compound semiconductor light-emitting device. 2. The method according to claim 1, wherein the n-type gallium nitride-based compound semiconductor layer includes an n ⁺ -type GaN layer having a high carrier concentration and an n ⁺ -type Ga
N _- type Ga _1-Y Al _Y N having a lower carrier concentration than the N layer
2. The method according to claim 1, wherein said (0 ≦ Y <1) layer is formed.
3. The gallium nitride-based compound semiconductor light-emitting device according to item 1. 3. The gallium nitride-based material according to claim 1, wherein the n-type In _x Ga ₁ -xN layer is made n-type by doping an n-type dopant and a p-type dopant. Compound semiconductor light emitting device. 4. The gallium nitride-based compound semiconductor light emitting device according to claim 1 , wherein the p-type gallium nitride-based compound semiconductor layer is annealed at 400 ° C. or higher to be p-type.