JP2917742B2 - Gallium nitride based compound semiconductor light emitting device and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gallium nitride-based compound semiconductor light emitting device and a method of manufacturing the same.

[0002]

2. Description of the Related Art Gallium nitride (GaN), indium gallium nitride (InGaN), and gallium aluminum nitride (GaAs) are practical semiconductor materials used for semiconductor light emitting devices such as light emitting diodes and laser diodes.
Gallium nitride-based compound semiconductors such as 1N) have attracted attention.

As a conventionally proposed light emitting device using a gallium nitride-based compound semiconductor, one having a structure shown in FIG. 3 is well known. This light-emitting element has A
It has a structure in which a buffer layer 2 made of 1N, an n-type GaN layer 3, and a p-type GaN layer 5 are sequentially stacked. Usually, sapphire is used for the substrate 1. A buffer layer 2 made of AlN provided on a substrate 1 is disclosed in
As described in JP-A-3-188983, the crystallinity of a gallium nitride-based compound semiconductor laminated thereon is improved. The n-type GaN layer 3 is made of Si as an n-type impurity.
Alternatively, Ge is doped to be n-type. p-type Ga
The N layer 5 is often doped with Mg or Zn as a p-type impurity, but is not a p-type because of poor crystallinity and is a high-resistance i-type. As means for converting an i-type into a low-resistance p-type, JP-A-2-42770 discloses a technique for irradiating the surface with an electron beam.

In general, the homojunction light emitting device shown in FIG. 3 has a low light output and is not practical. In order to increase the light emission output and make it a practical light emitting device, the gallium nitride based compound semiconductor laminated structure is preferably a single hetero,
It has been found that a double hetero structure is more preferable. However, in gallium nitride-based compound semiconductors, no practical light emitting device having a double hetero structure using a p-type layer has been reported yet.

[0005]

SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and an object of the present invention is to use a gallium nitride-based compound semiconductor capable of realizing a high-output semiconductor light emitting device. A semiconductor light emitting device and a method for manufacturing the same are provided.

[0006]

Means for Solving the Problems The present inventors used an InGaN layer doped with an n-type impurity as a light-emitting layer, thereby achieving a gallium nitride-based compound semiconductor light-emitting device having a double hetero structure which could not be achieved conventionally. Was successfully realized.

That is, a gallium nitride-based compound semiconductor light emitting device according to the present invention is provided with a first semiconductor layer made of an n-type gallium nitride-based compound semiconductor, and provided on the first semiconductor layer and doped with an n-type impurity. has been _In x _{Ga 1-X} N
(0 <X <0.5), and 0.5 when the film thickness is 10 ° or more.
a second semiconductor layer having a thickness of not more than μm, and a third semiconductor layer provided on the second semiconductor layer and formed of a p-type gallium nitride-based compound semiconductor.
And a semiconductor layer.

Further, in the gallium nitride based compound semiconductor light emitting device according to the present invention, the second semiconductor layer has at least one well layer made of In _x Ga ₁ -XN doped with an n-type impurity. Is preferred.

Further, in the gallium nitride based compound semiconductor light emitting device according to the present invention, the second semiconductor layer may include
n _X Ga _1-X low content of In to Ga compared to the first layer and the first layer consisting of N _In Y _{Ga 1-Y} N
It is preferable to have a multilayer film having a quantum well structure in which a second layer made of

In the gallium nitride-based compound semiconductor light emitting device according to the present invention, the first semiconductor layer may be formed of n-type Ga _1-a Al _a N (where 0 ≦ a <1). Preferably, the third semiconductor layer is a p-type Ga _1-b A
l _b N (where, 0 ≦ b <1) can be formed in.

Further, in the gallium nitride based compound semiconductor light emitting device according to the present invention, it is preferable that the n-type impurity doped in the second semiconductor layer is Si or Ge.

Furthermore, in the gallium nitride compound semiconductor light-emitting device according to the present invention, the first semiconductor layer has been grown on the substrate Ga Y _Al 1-Y _{N (where,} 0 ≦ Y
<1) It is preferable that the layer is grown on the buffer layer. Thus, the first semiconductor layer can be formed with good crystallinity.

Further, in the gallium nitride based compound semiconductor light emitting device according to the present invention, the third semiconductor layer may have a thickness of 0.1 mm.
It is preferable to have a film thickness of from 05 μm to 1.5 μm.

In a first method of manufacturing a gallium nitride-based compound semiconductor light emitting device according to the present invention, a first raw material gas containing an organic gallium compound and a nitrogen compound is used.
vapor-phase growing a first semiconductor layer made of an n-type gallium nitride-based compound semiconductor, using a second source gas containing an organic indium compound, an organic gallium compound and a nitrogen compound and containing an n-type impurity source; An In _X Ga _1-X doped with the n-type impurity on the first semiconductor layer;
A second semiconductor consisting of N (0 <X <0.5) is
The step of vapor-phase growing to a thickness of 0.5 μm or less as described above, and the second step using a third source gas containing an organic gallium compound and a nitrogen compound and containing a p-type impurity source.
A step of vapor-phase growing a third semiconductor layer made of a p-type gallium nitride-based compound semiconductor on the above semiconductor layer.

In the first method of manufacturing a gallium nitride-based compound semiconductor light emitting device according to the present invention, it is preferable that the first source gas further includes an n-type impurity source.

In the first method of manufacturing a gallium nitride based compound semiconductor light emitting device according to the present invention, the first source gas may further include an organoaluminum compound.

Further, in the first method for manufacturing a gallium nitride based compound semiconductor light emitting device according to the present invention, the third source gas may further include an organoaluminum compound.

In a second method of manufacturing a gallium nitride-based compound semiconductor light emitting device according to the present invention, a first raw material gas containing an organic gallium compound and a nitrogen compound is used.
a step of vapor-phase growing a first semiconductor layer made of an n-type gallium nitride-based compound semiconductor, on the first semiconductor layer by using a second source gas containing an organic indium compound, an organic gallium compound and a nitrogen compound; in, _in X Ga
_1-X N with less first layer and the content of In to Ga in comparison to the first layer made of _{(0 <X <0.5) In} Y G
a ₁ -YN alternately laminating the second layer to vapor-phase grow the second semiconductor to a thickness of not less than 10 ° and not more than 0.5 μm, and an organic gallium compound and a nitrogen compound And including a p-type impurity source.
A step of vapor-phase growing a third semiconductor layer made of a p-type gallium nitride-based compound semiconductor on the second semiconductor layer using the raw material gas described above.

In the second method of manufacturing a gallium nitride based compound semiconductor light emitting device according to the present invention, the first source gas may further include an organic aluminum compound.

Further, in the second method for manufacturing a gallium nitride-based compound semiconductor light emitting device according to the present invention, the third source gas may further include an organic aluminum compound.

FIG. 1 shows one structure of a gallium nitride based compound semiconductor light emitting device of the present invention. This light-emitting element includes a first semiconductor layer 13 made of an n-type gallium nitride-based compound semiconductor on a substrate 11 via a buffer layer 12.
And a nitride semiconductor In _x Ga ₁ -xN containing indium, gallium, and nitrogen doped with an n-type impurity (0 <X <
The semiconductor device has a double-hetero semiconductor stacked structure in which a second semiconductor layer 14 made of 1) and a third semiconductor layer 15 made of a p-type gallium nitride-based compound semiconductor are sequentially stacked. In the light emitting device having this structure, the light emitting layer is formed of In _x Ga.
_{This is a 1-} XN layer 14, and the first semiconductor layer 13 and the third semiconductor layer 15 are clad layers.

The substrate 11 can be made of a material such as sapphire, SiC, ZnO or the like, but usually sapphire is used.

The buffer layer 12 is made of Ga _Y Al _{1 -Y} N (0 ≦ Y
≦ 1), usually from 0.002 μm to
It is formed to a thickness of 0.5 μm. GaN is preferably formed of GaN because a gallium nitride-based compound semiconductor having good crystallinity can be stacked thereon over AIN. The effect of the GaN buffer layer is described in Japanese Patent Application No. 3-89840 filed earlier by the present applicant. When a sapphire substrate is used, a buffer layer made of GaN is more effective than a conventional AlN buffer layer. A gallium nitride-based compound semiconductor having excellent crystallinity can be obtained. More preferably, a buffer layer having the same composition as that of the gallium nitride-based compound semiconductor to be grown is first grown on a sapphire substrate at a low temperature. The crystallinity of the gallium nitride-based compound semiconductor stacked in the layer can be improved.

The first semiconductor layer 13 is made of n-type GaN or GaAl in which a part of Ga is replaced with Al.
N. That is, the first semiconductor layer 13 can be formed of Ga _1-a Al _a N (0 ≦ a <1). Gallium nitride-based compound semiconductors have the property of being n-type even if they are non-doped.
A preferable n-type may be obtained by doping a type impurity.

The third semiconductor layer 15 is formed of p-type GaN or GaAl in which a part of Ga is replaced with Al.
N. That is, the third semiconductor layer 15 can be formed of Ga _1-b Al _b N (0 ≦ b <1). The third semiconductor layer 15 functions as a cladding layer in the structure of the device of the present invention, and is doped with a p-type impurity such as Mg or Zn.
_1-b Al _b after the N layer is grown, as for example the Applicant has described in Japanese Patent Application No. Hei 3-357046 filed earlier, 4
Annealing at a temperature of 00 ° C. or more, preferably 600 ° C. or more can provide a low-resistance p-type. The third semiconductor layer 15 has a thickness of 0.05 μm to 1.5 μm.
It is preferable to form it to a thickness of μm. Its thickness is 0.
When it is thinner than 05 μm, it does not easily act as a cladding layer,
On the other hand, if the thickness is more than 1.5 μm, it tends to be difficult to convert to a p-type layer by the above method.

Second semiconductor layer 1 doped with n-type impurities
4 is a gas obtained by adding an n-type impurity source gas to a source gas composed of a Ga source, an In source, and an N source at a temperature higher than 600 ° C. by, for example, metalorganic vapor phase epitaxy. Can be used to grow the first semiconductor layer 13. In that case, it is desirable that the molar ratio of indium to gallium in the source gas be more than 1.

The n-type impurity doped in the second semiconductor layer 14 may be Si or Ge.
The second semiconductor layer 14 is doped with an n-type impurity at 10 ¹⁶ / cm ³
By doping in an amount of 10 to 10 ²² / cm ³ , preferably 10 ¹⁸ to 10 ²⁰ / cm ³ , the light emitting output of the light emitting element can be increased.

Further, the I for forming the second semiconductor layer 14
n _X Ga _1-X N layer 4 in the ratio of In, i.e., the X value 0 <X
It is adjusted in the range of <0.5, preferably in the range of 0.01 <X <0.5. In this case, by making it more than 0,
The In _x Ga ₁ -xN layer 4 acts as a light emitting layer, and when it becomes 0.5 or more, its emission color becomes yellow.

FIG. 2 is a sectional view showing another structure of the semiconductor light emitting device of the present invention. This figure is different from FIG.
Is a multi-layer film made of gallium nitride-based compound semiconductors having different compositions. Specifically, the gallium nitride-based compound semiconductor A containing indium and gallium, and nitrogen, and doped with an n-type impurity, has a composition ratio of indium and gallium different from that of the semiconductor A, and It is formed of a multilayer film made of a gallium nitride-based compound semiconductor B doped with an n-type impurity. Since the second semiconductor layer 14 has a multiple quantum well structure by being formed of a multilayer film, the light emitting output of the light emitting element can be improved. In the case of using a laser diode, the threshold current can be reduced.

When the second semiconductor layer 14 is a multilayer film,
When the X value is in the range of 0 <X <0.5, the In _x Ga ₁ -xN layer 4
It is preferable to use multilayer films having different values.

The second semiconductor layer 14 has a thickness of 10 Å to 0.5 μm, more preferably 0.01 μm to 0.5 μm.
It is desirable to form it with a thickness of 0.1 μm. Further, even in the case of a multilayer film, it is desirable to adjust the total film thickness within the above range. If the thickness is less than 10 Å or more than 0.5 μm, sufficient light emission output tends not to be obtained. This tends to be found only in gallium nitride-based compound semiconductors. FIG.
Shows that the second semiconductor layer 14, which is the light emitting layer of the light emitting element having the structure shown in FIG. 1, is formed of In0.1Ga0.9N doped with an n-type impurity.
FIG. 9 is a graph showing a relationship between the thickness of the second semiconductor layer 14 and the relative light emission intensity of the obtained light emitting element when the light emitting element is formed by using the method shown in FIG. As shown in FIG. 4, in the light emitting element of the present invention, the light emission intensity changes by changing the thickness of the second semiconductor layer 14 which is the light emitting layer. In particular, when the film thickness exceeds 0.5 μm, it tends to sharply decrease. Accordingly, the thickness of the second semiconductor layer 14 is set so that the obtained light emitting element has a relative light emission intensity of 90% or more.
It is preferable that the thickness be in the range of 10 Å to 0.5 μm. Note that similar results were obtained when the second semiconductor layer 14 was a multilayer film.

The light emitting device of the present invention has a double-heterostructure semiconductor laminated structure using an In _x Ga ₁ -xN layer doped with an n-type impurity as a light emitting layer. The light emission output is remarkably improved as compared with. Moreover, in the conventional GaN-based light-emitting device having a homojunction structure, the p-type GaN layer is the light-emitting layer, but in the present invention, the n-type first semiconductor layer and the p-type third semiconductor layer are clad layers. , And the In _x Ga ₁ -xN layer acts as a light emitting layer. In addition, since the light emitting layer is doped with the n-type impurity, a light emitting element having a high light emission output is realized.

[0033]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to more specific examples. In these examples, each semiconductor layer is formed by metal organic chemical vapor deposition. The reactor used was
While heating a substrate mounted on a susceptor in a reaction vessel, a material having a mechanism for growing a gallium nitride-based compound semiconductor by supplying a source gas together with a carrier gas toward the substrate was used.

Example 1 First, a well-washed sapphire substrate was set on a susceptor in a reaction vessel, and after sufficiently replacing the inside of the reaction vessel with hydrogen, the temperature of the substrate was increased to 1050 ° C. while flowing hydrogen, and the reaction was continued for 20 minutes. Hold and clean the sapphire substrate.

Subsequently, the temperature was lowered to 510 ° C., and ammonia (NH ₃ ) 4 liter / min.
G a (trimethylgallium) 27 × 10 ^-6 mol / min, hydrogen as a carrier gas at a rate of 2 liters / min, while supplying the substrate surface, and held for one minute, about 200 GaN buffer layer on a sapphire substrate It is grown to a thickness of Å.

After the growth of the buffer layer, the supply of only TMG is stopped, and the temperature is increased to 1030 ° C. After reaching 1030 ° C., hydrogen was also used as a carrier gas and TM
54 × 10 ^-6 mol / min G, flowed 2 × 10 ^-9 mol / min silane gas, and ammonia at 4 liters / min 3
After growing for 0 minutes, a Si-doped n-type GaN layer is grown to 2 μm.

After the growth of the n-type GaN layer, the supply of all the source gases is stopped, the temperature is set to 800 ° C., the carrier gas is switched to nitrogen, the nitrogen is supplied at a rate of 2 liters / minute, and TMG is used as the source gas. X 10 ^-6 mol / min, TMI (trimethyl indium) at 1 x 10 ^-5 mol / min, silane gas at 2 x 10 ^-9 mol / min, and ammonia at 4 l / min for 10 minutes to give Si-doped In0. .14Ga0.86N
The layer is grown to a thickness of 200 Å.

After growing the Si-doped In0.14Ga0.86N layer,
All the source gases were stopped, the temperature was raised again to 1020 ° C., TMG was 54 × 10 ⁻⁶ mol / min, Cp 2 Mg (cyclopentadienyl magnesium) was 3.6 × 10 ⁻⁶ mol / min, and ammonia was 4 × 10 ⁻⁶ mol / min. While flowing at a rate of liter / minute, a p-type GaN layer is grown to a thickness of 0.8 μm.

After the growth of the p-type GaN layer, the substrate is taken out of the reaction vessel, and the substrate is placed in a nitrogen atmosphere by an annealing apparatus.
Anneal at 20 ° C. for 20 minutes to form p-type GaN
Further lowering the resistance of the layer.

The p-type GaN layer and a part of the Si-doped In0.14Ga0.86N of the wafer obtained as described above were removed by etching, exposing the n-type GaN layer, and removing the p-type GaN layer and the n-type GaN layer. After forming an ohmic electrode on the GaN layer and cutting the chip into a 500 μm square chip, a light emitting diode was formed according to a conventional method. The light emitting output was 120 μW at 20 mA and the peak wavelength was 40 μm.
It was 0 nm.

Example 2 In Example 1, after growing a Si-doped n-type In0.14Ga0.86N layer, the flow rate of TMI was then set to 2 × 10 ⁻⁵ mol / mol.
, And a Si-doped In0.25Ga0.75N layer was grown thereon by 50 angstroms. Subsequently, the flow rate of TMI was changed to 1 × 10 ⁻⁵ mol / min, and the Si-doped In 0.
A 14 Ga 0.86 N layer was grown for 200 Å.
After that, a light emitting diode was formed in the same manner as in Example 1. In other words, the light emitting layers of Example 1 were sequentially replaced with the In0.14Ga0.86N layer 20.
A multi-layer structure of 0 Å, 50 Å of In0.25 Ga0.75N layer, and 200 Å of In0.14 Ga0.86N layer was adopted. The light emitting output of this light emitting diode was 240 μW at 20 mA, and the peak wavelength was 420 nm.

Example 3 In the step of growing the buffer layer of Example 1, the same amount of TMA gas was flowed instead of TMG at a temperature of 600 ° C.
On a sapphire substrate, a buffer layer made of
Example 1 was repeated except that the film was grown to a thickness of 0 Å.
A light emitting diode was obtained in the same manner as described above. The output of this light emitting diode was 80 μW at 20 mA, which was slightly lower than that of the buffer layer made of GaN, but was about 1.6 times that of the conventional homojunction light emitting diode.

Example 4 A light emitting diode having a multilayered InGaN film was prepared in the same manner as in Example 2 except that the buffer layer was changed to AlN as in Example 3. This light emitting diode also has a light emission output of 200 μW at 20 mA and a peak wavelength of 42 μm.
It was 0 nm.

Example 5 In the step of growing the Si-doped n-type GaN layer of Example 1, at 1030 ° C., also using hydrogen as a carrier gas,
TMG and 54 × 10 ^-6 mol / min, a TMA 6 × 10 ^-6
Mol / min, 2 × 10 ⁻⁹ mol / min of silane gas, and 4 liter / min of ammonia to grow for 30 minutes.
A doped n-type Ga0.9Al0.1N layer is grown at 2 .mu.m.

Next, the Si-doped n-type Ga0.9Al0.1N
On the layer, Si-doped In0.14Ga0.
After growing the 86N layer to 200 Å, the source gas is stopped, the temperature is raised again to 1020 ° C., and TMG
The 54 × 10 ^-6 mol / min, TMA and 6 × 10 ^-6 mol /
And Mg-doped p-type Ga0.9Al0.1N while flowing Cp2Mg (cyclopentadienylmagnesium) at 3.6 × 10 ^-6 mol / min and ammonia at 4 L / min.
The layer is grown 0.8 μm.

As described above, the GaN buffer layer, the Si-doped n-type Ga0.9Al0.1N layer,
i-doped In0.14Ga0.86N layer and Mg-doped p-type Ga
Example 1 is a wafer in which 0.9Al0.1N layers are sequentially laminated.
After annealing in the same manner as described above, a light emitting diode was obtained. The light emitting output was 120 μW at 20 mA, and the peak wavelength was 400 nm, which was the same as Example 1.

Example 6 When growing the buffer layer of Example 1, at 510 ° C., 4 liters of ammonia (NH ₃ )
Min, TMG (trimethylgallium) and 27 × 10 ^-6 mol / min, TMA flushed and 3 × 10 ^-6 mol / min, about 20 Ga0.9Al0.1N buffer layer on a sapphire substrate
It is grown to a thickness of 0 Å.

Next, on the buffer layer, in the same manner as in Example 5, a Si-doped n-type GaO.
A 9 Al 0.1 N layer is grown at 2 μm.

Next, on the Si-doped n-type Ga0.9Al0.1N layer, in the same manner as in Example 2, Si-doped In0.14Ga0.86
N layer 200 Å and Si-doped In0.25G
a0.75N layer 50 Å and Si-doped In0.
A 14 Ga 0.86 N layer of 200 Å is sequentially laminated to form a multilayer film.

Further, a light-emitting diode was formed in the same manner as in Example 5, except that a p-type Ga0.9Al0.1N layer was grown to a thickness of 1 μm on the multilayer film. Output is 210μ at 20mA
W, the peak wavelength was 420 nm.

Comparative Example A homojunction GaN light emitting diode was obtained in the same manner as in Example 1 except that the In0.14Ga0.86N layer of Example 1 was not grown. The light emitting output of this light emitting diode is 50 at 20 mA.
There was only μW, and the peak wavelength was 430 nm.

[0052]

As described above, since the blue light emitting device of the present invention has a double hetero structure using a gallium nitride compound semiconductor, a semiconductor light emitting device having high luminous efficiency can be obtained. . In addition, since the conventional homojunction light emitting element emits light through a deep light emitting center made of Zn, Mg, or the like of the p-type GaN layer, the half width of the light emission peak is about 60 nm,
Very wide. On the other hand, the light emitting device of the double hetero structure of the present invention utilizes the interband emission of the InGaN layer doped with the n-type impurity, and therefore has a narrow half-value width of about 25 nm, which is less than half of the light emitting device of the homojunction. . Therefore, the color purity is very good.

Further, the conventional light emitting device having a homojunction structure using p-type GaN has poor stability because its emission color changes depending on the kind and amount of impurities doped into p-type GaN. The light emitting device of the present invention has a light emitting layer of In _x
By changing the molar ratio of In in Ga ₁ -XN, the emission color can be changed accordingly, so that a semiconductor light emitting device that is stable and excellent in reliability can be obtained.

Although the above description mainly relates to a light emitting diode, the present invention is also applicable to a laser diode, and its industrial value is very large.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing one structure of a semiconductor light emitting device of the present invention.

FIG. 2 is a schematic sectional view showing another structure of the semiconductor light emitting device of the present invention.

FIG. 3 is a schematic cross-sectional view showing one structure of a conventional gallium nitride-based compound semiconductor light emitting device.

FIG. 4 is a diagram showing the relationship between the thickness of a light emitting layer and the relative light emission intensity of a light emitting element according to the semiconductor light emitting element of the present invention.

[Explanation of symbols]

 11 substrate 12 GaN buffer layer 13 first semiconductor layer 14 second semiconductor layer 15 third semiconductor layer

──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-59-228776 (JP, A) JP-A-4-68579 (JP, A) JP-A-3-203388 (JP, A) JP-A-3-203 218625 (JP, A) JP-A-64-17484 (JP, A) JP-A-2-229475 (JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) H01L 33/00 H01S 3 / 18 JICST file (JOIS)

Claims (14)

(57) [Claims] A first semiconductor layer made of an n-type gallium nitride-based compound semiconductor; a first semiconductor layer provided on the first semiconductor layer;
In _X Ga _1-X N (0 <X
<0.5), a second semiconductor layer having a thickness of 10 ° or more and 0.5 μm or less, a second semiconductor layer provided on the second semiconductor layer,
Gallium nitride-based compound semiconductor light-emitting device having a third semiconductor layer made of a p-type gallium nitride-based compound semiconductor. Wherein said second semiconductor layer, nitride of claim 1, wherein the n-type impurity, characterized in that it comprises at least one layer of the well layer of doped In X _Ga 1-X _N Gallium compound semiconductor light emitting device. Wherein said second semiconductor layer, _{an In} X Ga
_1-X consisting of _N first layer and the multilayer film of the quantum well structure and the second layer is laminated for comparing the first layer consists of less In Y _Ga 1-Y _N with the content of In to Ga The gallium nitride-based compound semiconductor light emitting device according to claim 1, comprising: 4. The method according to claim 1, wherein the first semiconductor layer is an n-type Ga _1-a
Al _a N (where 0 ≦ a <1), and the third semiconductor layer is formed of p-type Ga _1-b Al _b N (where 0 ≦ b
The gallium nitride-based compound semiconductor light emitting device according to any one of claims 1 to 3, wherein <1) is included. 5. The gallium nitride-based compound semiconductor light-emitting device according to claim 1, wherein the n-type impurity doped in the second semiconductor layer is Si or Ge. Wherein said first semiconductor layer, _(where, 0 ≦ Y ≦ 1) grown Ga Y _Al 1-Y _N on a substrate characterized by being grown on the more becomes the buffer layer The gallium nitride-based compound semiconductor light-emitting device according to any one of claims 1 to 5, wherein 7. The method according to claim 1, wherein the third semiconductor layer has a thickness of 0.05 μm or less.
7. The gallium nitride-based compound semiconductor light emitting device according to claim 1, wherein the gallium nitride based compound semiconductor light emitting device has a thickness of 1.5 μm. 8. A step of vapor-growing a first semiconductor layer made of an n-type gallium nitride-based compound semiconductor using a first source gas containing an organic gallium compound and a nitrogen compound, an organic indium compound, and an organic indium compound. Using a second source gas containing a gallium compound and a nitrogen compound and containing an n-type impurity source, the n-type impurity-doped In _X Ga _1-X N ( 0 <X <0.5)
Vapor-phase growing a second semiconductor consisting of at least 10 ° and a thickness of 0.5 μm or less, and a third source gas containing an organic gallium compound and a nitrogen compound and containing a p-type impurity source Manufacturing a gallium nitride-based compound semiconductor light-emitting device, comprising a step of vapor-phase growing a third semiconductor layer made of a p-type gallium nitride-based compound semiconductor on the second semiconductor layer using Method. 9. The method according to claim 8, wherein the first source gas further includes an n-type impurity source. 10. The method according to claim 8, wherein the first source gas further contains an organoaluminum compound. 11. The method according to claim 8, wherein the third source gas further contains an organoaluminum compound. 12. A step of vapor-growing a first semiconductor layer made of an n-type gallium nitride-based compound semiconductor using a first source gas containing an organic gallium compound and a nitrogen compound, an organic indium compound, and an organic indium compound. using the second raw material gas including a gallium compound and a nitrogen compound, said first semiconductor _{layer, in X Ga 1-X N} (0 <X <
By laminating a second layer of the first layer and compared to the first layer low content of In to _{Ga In Y} Ga _1-Y N consisting of 0.5) alternately in the second Vapor-phase growing the semiconductor to a thickness of 10 μm or more and 0.5 μm or less, and using a third source gas containing an organic gallium compound and a nitrogen compound and containing a p-type impurity source; A method for manufacturing a gallium nitride-based compound semiconductor light emitting device, comprising a step of vapor-phase growing a third semiconductor layer made of a p-type gallium nitride-based compound semiconductor on a second semiconductor layer. 13. The method according to claim 12, wherein the first source gas further contains an organoaluminum compound. 14. The method according to claim 12, wherein the third source gas further contains an organoaluminum compound.