JP2627901B2 - 結晶材料の融液サセプタの蓋 - Google Patents

結晶材料の融液サセプタの蓋

Info

Publication number
JP2627901B2
JP2627901B2 JP62222879A JP22287987A JP2627901B2 JP 2627901 B2 JP2627901 B2 JP 2627901B2 JP 62222879 A JP62222879 A JP 62222879A JP 22287987 A JP22287987 A JP 22287987A JP 2627901 B2 JP2627901 B2 JP 2627901B2
Authority
JP
Japan
Prior art keywords
lid
slot
web
opening
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62222879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63166788A (ja
Inventor
チャールズ・スチュアート・ダンカン
エドガー・レオナルド・コシュカ
ポール・アンソニー・パイオトロウスキ
レイモンド・ジョージ・サイデンスティッカー
Original Assignee
エバラ ソーラー インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エバラ ソーラー インコーポレイテッド filed Critical エバラ ソーラー インコーポレイテッド
Publication of JPS63166788A publication Critical patent/JPS63166788A/ja
Application granted granted Critical
Publication of JP2627901B2 publication Critical patent/JP2627901B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP62222879A 1986-12-18 1987-09-04 結晶材料の融液サセプタの蓋 Expired - Lifetime JP2627901B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US94309286A 1986-12-18 1986-12-18
US943,092 1986-12-18

Publications (2)

Publication Number Publication Date
JPS63166788A JPS63166788A (ja) 1988-07-09
JP2627901B2 true JP2627901B2 (ja) 1997-07-09

Family

ID=25479092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62222879A Expired - Lifetime JP2627901B2 (ja) 1986-12-18 1987-09-04 結晶材料の融液サセプタの蓋

Country Status (7)

Country Link
JP (1) JP2627901B2 (enrdf_load_stackoverflow)
KR (1) KR960000061B1 (enrdf_load_stackoverflow)
AU (1) AU586757B2 (enrdf_load_stackoverflow)
GB (1) GB2198965B (enrdf_load_stackoverflow)
IN (1) IN168114B (enrdf_load_stackoverflow)
IT (1) IT1229975B (enrdf_load_stackoverflow)
MY (1) MY101906A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
US4828808A (en) * 1987-09-02 1989-05-09 The United States Of America As Represented By The United States Department Of Energy Apparatus for silicon web growth of higher output and improved growth stability
US6093244A (en) * 1997-04-10 2000-07-25 Ebara Solar, Inc. Silicon ribbon growth dendrite thickness control system
KR20010108163A (ko) * 1999-02-02 2001-12-07 로시 리차드 실리콘 리본의 수지상 결정의 성장 두께를 제어하는 시스템
JP6028308B1 (ja) * 2015-10-29 2016-11-16 並木精密宝石株式会社 Ｅｆｇ法用育成炉の熱反射板構造
JP5923700B1 (ja) * 2015-11-30 2016-05-25 並木精密宝石株式会社 大型ｅｆｇ法用育成炉の蓋体構造

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN161924B (enrdf_load_stackoverflow) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width

Also Published As

Publication number Publication date
GB8719475D0 (en) 1987-09-23
JPS63166788A (ja) 1988-07-09
AU586757B2 (en) 1989-07-20
KR880007196A (ko) 1988-08-26
AU7668987A (en) 1988-06-23
MY101906A (en) 1992-02-15
IN168114B (enrdf_load_stackoverflow) 1991-02-09
GB2198965A (en) 1988-06-29
GB2198965B (en) 1990-10-31
IT8741659A0 (it) 1987-08-17
IT1229975B (it) 1991-09-20
KR960000061B1 (ko) 1996-01-03

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