KR960000061B1 - 웨브성장용 서스셉터의 리드 - Google Patents

웨브성장용 서스셉터의 리드 Download PDF

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Publication number
KR960000061B1
KR960000061B1 KR1019870008980A KR870008980A KR960000061B1 KR 960000061 B1 KR960000061 B1 KR 960000061B1 KR 1019870008980 A KR1019870008980 A KR 1019870008980A KR 870008980 A KR870008980 A KR 870008980A KR 960000061 B1 KR960000061 B1 KR 960000061B1
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KR
South Korea
Prior art keywords
groove
web
plate side
lead
susceptor
Prior art date
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Expired - Fee Related
Application number
KR1019870008980A
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English (en)
Korean (ko)
Other versions
KR880007196A (ko
Inventor
스튜어트 던칸 챠알스
레오나드 코카 에드가
앤쏘니 피오트로프스키 폴
죠오지 지이덴스티커 레이몬드
Original Assignee
에바라 솔라 인코포레이티드
리챠드 로시
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Publication of KR880007196A publication Critical patent/KR880007196A/ko
Application granted granted Critical
Publication of KR960000061B1 publication Critical patent/KR960000061B1/ko
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Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1019870008980A 1986-12-18 1987-08-17 웨브성장용 서스셉터의 리드 Expired - Fee Related KR960000061B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US94309286A 1986-12-18 1986-12-18
US943,092 1986-12-18
US943092 1986-12-18

Publications (2)

Publication Number Publication Date
KR880007196A KR880007196A (ko) 1988-08-26
KR960000061B1 true KR960000061B1 (ko) 1996-01-03

Family

ID=25479092

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870008980A Expired - Fee Related KR960000061B1 (ko) 1986-12-18 1987-08-17 웨브성장용 서스셉터의 리드

Country Status (7)

Country Link
JP (1) JP2627901B2 (enrdf_load_stackoverflow)
KR (1) KR960000061B1 (enrdf_load_stackoverflow)
AU (1) AU586757B2 (enrdf_load_stackoverflow)
GB (1) GB2198965B (enrdf_load_stackoverflow)
IN (1) IN168114B (enrdf_load_stackoverflow)
IT (1) IT1229975B (enrdf_load_stackoverflow)
MY (1) MY101906A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
US4828808A (en) * 1987-09-02 1989-05-09 The United States Of America As Represented By The United States Department Of Energy Apparatus for silicon web growth of higher output and improved growth stability
US6093244A (en) * 1997-04-10 2000-07-25 Ebara Solar, Inc. Silicon ribbon growth dendrite thickness control system
CN1177956C (zh) * 1999-02-02 2004-12-01 埃伯乐太阳能公司 硅带生长枝晶厚度的控制系统
JP6028308B1 (ja) * 2015-10-29 2016-11-16 並木精密宝石株式会社 Ｅｆｇ法用育成炉の熱反射板構造
JP5923700B1 (ja) * 2015-11-30 2016-05-25 並木精密宝石株式会社 大型ｅｆｇ法用育成炉の蓋体構造

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN161924B (enrdf_load_stackoverflow) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width

Also Published As

Publication number Publication date
IN168114B (enrdf_load_stackoverflow) 1991-02-09
KR880007196A (ko) 1988-08-26
AU586757B2 (en) 1989-07-20
GB2198965A (en) 1988-06-29
MY101906A (en) 1992-02-15
JPS63166788A (ja) 1988-07-09
IT1229975B (it) 1991-09-20
AU7668987A (en) 1988-06-23
JP2627901B2 (ja) 1997-07-09
GB8719475D0 (en) 1987-09-23
GB2198965B (en) 1990-10-31
IT8741659A0 (it) 1987-08-17

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