KR960000061B1 - 웨브성장용 서스셉터의 리드 - Google Patents

웨브성장용 서스셉터의 리드 Download PDF

Info

Publication number
KR960000061B1
KR960000061B1 KR1019870008980A KR870008980A KR960000061B1 KR 960000061 B1 KR960000061 B1 KR 960000061B1 KR 1019870008980 A KR1019870008980 A KR 1019870008980A KR 870008980 A KR870008980 A KR 870008980A KR 960000061 B1 KR960000061 B1 KR 960000061B1
Authority
KR
South Korea
Prior art keywords
groove
web
plate side
lead
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019870008980A
Other languages
English (en)
Korean (ko)
Other versions
KR880007196A (ko
Inventor
스튜어트 던칸 챠알스
레오나드 코카 에드가
앤쏘니 피오트로프스키 폴
죠오지 지이덴스티커 레이몬드
Original Assignee
에바라 솔라 인코포레이티드
리챠드 로시
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에바라 솔라 인코포레이티드, 리챠드 로시 filed Critical 에바라 솔라 인코포레이티드
Publication of KR880007196A publication Critical patent/KR880007196A/ko
Application granted granted Critical
Publication of KR960000061B1 publication Critical patent/KR960000061B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1019870008980A 1986-12-18 1987-08-17 웨브성장용 서스셉터의 리드 Expired - Fee Related KR960000061B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US94309286A 1986-12-18 1986-12-18
US943,092 1986-12-18
US943092 1986-12-18

Publications (2)

Publication Number Publication Date
KR880007196A KR880007196A (ko) 1988-08-26
KR960000061B1 true KR960000061B1 (ko) 1996-01-03

Family

ID=25479092

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870008980A Expired - Fee Related KR960000061B1 (ko) 1986-12-18 1987-08-17 웨브성장용 서스셉터의 리드

Country Status (7)

Country Link
JP (1) JP2627901B2 (enrdf_load_stackoverflow)
KR (1) KR960000061B1 (enrdf_load_stackoverflow)
AU (1) AU586757B2 (enrdf_load_stackoverflow)
GB (1) GB2198965B (enrdf_load_stackoverflow)
IN (1) IN168114B (enrdf_load_stackoverflow)
IT (1) IT1229975B (enrdf_load_stackoverflow)
MY (1) MY101906A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
US4828808A (en) * 1987-09-02 1989-05-09 The United States Of America As Represented By The United States Department Of Energy Apparatus for silicon web growth of higher output and improved growth stability
US6093244A (en) * 1997-04-10 2000-07-25 Ebara Solar, Inc. Silicon ribbon growth dendrite thickness control system
ATE370263T1 (de) * 1999-02-02 2007-09-15 Ebara Corp Vorrichtung zur reglung der schichtdicke eines dendrits während der züchtung eines siliziumbandes
JP6028308B1 (ja) * 2015-10-29 2016-11-16 並木精密宝石株式会社 Ｅｆｇ法用育成炉の熱反射板構造
JP5923700B1 (ja) * 2015-11-30 2016-05-25 並木精密宝石株式会社 大型ｅｆｇ法用育成炉の蓋体構造

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN161924B (enrdf_load_stackoverflow) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width

Also Published As

Publication number Publication date
JPS63166788A (ja) 1988-07-09
GB8719475D0 (en) 1987-09-23
IT1229975B (it) 1991-09-20
JP2627901B2 (ja) 1997-07-09
MY101906A (en) 1992-02-15
IN168114B (enrdf_load_stackoverflow) 1991-02-09
AU586757B2 (en) 1989-07-20
AU7668987A (en) 1988-06-23
KR880007196A (ko) 1988-08-26
GB2198965B (en) 1990-10-31
IT8741659A0 (it) 1987-08-17
GB2198965A (en) 1988-06-29

Similar Documents

Publication Publication Date Title
US3953174A (en) Apparatus for growing crystalline bodies from the melt
Barrett et al. Growth of wide, flat crystals of silicon web
US4832922A (en) Single crystal growing method and apparatus
US4271129A (en) Heat radiation deflectors within an EFG crucible
US3453352A (en) Method and apparatus for producing crystalline semiconductor ribbon
KR960000061B1 (ko) 웨브성장용 서스셉터의 리드
KR100270056B1 (ko) 쵸크랄 스키법에 따른 결정제조장치 및 제조방법
JP2006504613A (ja) 単一のるつぼから複数の結晶リボンを成長させる方法および装置
CA1081586A (en) Method and apparatus for forming silicon crystalline bodies
US4316764A (en) Method for horizontal ribbon crystal growth
US4322263A (en) Method for horizontal ribbon crystal growth
KR930005408B1 (ko) 실리콘 단결정의 제조장치
US11761119B2 (en) System for growing crystal sheets
GB2166062A (en) Apparatus for drawing dendritic silicon web from silicon melt
US4751059A (en) Apparatus for growing dendritic web crystals of constant width
US5098287A (en) Lid for improved dendritic web growth
US4267010A (en) Guidance mechanism
JP2686489B2 (ja) デンドライトウェブ結晶成長装置
JP2665554B2 (ja) シリコン・デンドライトウェブ結晶の成長に用いる蓋
JP2587932B2 (ja) シリコンリボンの製造方法
US4698120A (en) Barrier for quartz crucible for drawing silicon dendritic web and method of use
JPS6111914B2 (enrdf_load_stackoverflow)
Duncan et al. Lid for improved dendritic web growth
US8256373B2 (en) Device for depositing a layer of polycrystalline silicon on a support
JPH05279189A (ja) ルチル単結晶の育成方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20021227

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20040104

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20040104

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000