JP2538451Y2 - 半導体レーザ装置 - Google Patents
半導体レーザ装置Info
- Publication number
- JP2538451Y2 JP2538451Y2 JP1988129807U JP12980788U JP2538451Y2 JP 2538451 Y2 JP2538451 Y2 JP 2538451Y2 JP 1988129807 U JP1988129807 U JP 1988129807U JP 12980788 U JP12980788 U JP 12980788U JP 2538451 Y2 JP2538451 Y2 JP 2538451Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- light receiving
- electric terminal
- commonly connected
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 49
- 238000012544 monitoring process Methods 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988129807U JP2538451Y2 (ja) | 1988-10-03 | 1988-10-03 | 半導体レーザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988129807U JP2538451Y2 (ja) | 1988-10-03 | 1988-10-03 | 半導体レーザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0252370U JPH0252370U (enrdf_load_stackoverflow) | 1990-04-16 |
| JP2538451Y2 true JP2538451Y2 (ja) | 1997-06-18 |
Family
ID=31384424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988129807U Expired - Lifetime JP2538451Y2 (ja) | 1988-10-03 | 1988-10-03 | 半導体レーザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2538451Y2 (enrdf_load_stackoverflow) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6161485A (ja) * | 1984-09-03 | 1986-03-29 | Nec Corp | モニタ−付半導体レ−ザ |
| JPH0642355Y2 (ja) * | 1986-12-01 | 1994-11-02 | 三洋電機株式会社 | 半導体レ−ザ装置 |
-
1988
- 1988-10-03 JP JP1988129807U patent/JP2538451Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0252370U (enrdf_load_stackoverflow) | 1990-04-16 |
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