JP2533834B2 - 基板表面から金属含有汚染物質を除去する方法及びこれに用いるガス状清浄剤 - Google Patents

基板表面から金属含有汚染物質を除去する方法及びこれに用いるガス状清浄剤

Info

Publication number
JP2533834B2
JP2533834B2 JP5319104A JP31910493A JP2533834B2 JP 2533834 B2 JP2533834 B2 JP 2533834B2 JP 5319104 A JP5319104 A JP 5319104A JP 31910493 A JP31910493 A JP 31910493A JP 2533834 B2 JP2533834 B2 JP 2533834B2
Authority
JP
Japan
Prior art keywords
metal
substrate
substrate surface
ligand complex
contaminants
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP5319104A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06228592A (ja
Inventor
マーク．アレン．ジョージ
デイヴィッド．アーサー．ボウリング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of JPH06228592A publication Critical patent/JPH06228592A/ja
Application granted granted Critical
Publication of JP2533834B2 publication Critical patent/JP2533834B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10P70/12—
    • H10P70/20—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H10P72/0406—
    • H10P95/00—
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Silicon Compounds (AREA)
  • Drying Of Semiconductors (AREA)
JP5319104A 1992-11-25 1993-11-25 基板表面から金属含有汚染物質を除去する方法及びこれに用いるガス状清浄剤 Expired - Lifetime JP2533834B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/982196 1992-11-25
US07/982,196 US5332444A (en) 1992-11-25 1992-11-25 Gas phase cleaning agents for removing metal containing contaminants from integrated circuit assemblies and a process for using the same

Publications (2)

Publication Number Publication Date
JPH06228592A JPH06228592A (ja) 1994-08-16
JP2533834B2 true JP2533834B2 (ja) 1996-09-11

Family

ID=25528925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5319104A Expired - Lifetime JP2533834B2 (ja) 1992-11-25 1993-11-25 基板表面から金属含有汚染物質を除去する方法及びこれに用いるガス状清浄剤

Country Status (5)

Country Link
US (1) US5332444A (OSRAM)
EP (1) EP0605785A3 (OSRAM)
JP (1) JP2533834B2 (OSRAM)
KR (1) KR970003887B1 (OSRAM)
TW (1) TW268973B (OSRAM)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5521119A (en) * 1994-07-13 1996-05-28 Taiwan Semiconductor Manufacturing Co. Post treatment of tungsten etching back
JP2862797B2 (ja) * 1994-08-11 1999-03-03 日本酸素株式会社 半導体基板の乾式洗浄方法
US5782986A (en) * 1996-01-11 1998-07-21 Fsi International Process for metals removal using beta-diketone or beta-ketoimine ligand forming compounds
US5766367A (en) * 1996-05-14 1998-06-16 Sandia Corporation Method for preventing micromechanical structures from adhering to another object
US5954884A (en) 1997-03-17 1999-09-21 Fsi International Inc. UV/halogen metals removal process
US6065481A (en) 1997-03-26 2000-05-23 Fsi International, Inc. Direct vapor delivery of enabling chemical for enhanced HF etch process performance
US6107166A (en) * 1997-08-29 2000-08-22 Fsi International, Inc. Vapor phase cleaning of alkali and alkaline earth metals
US6465374B1 (en) 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
US6303972B1 (en) 1998-11-25 2001-10-16 Micron Technology, Inc. Device including a conductive layer protected against oxidation
US7067861B1 (en) 1998-11-25 2006-06-27 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
US6734120B1 (en) * 1999-02-19 2004-05-11 Axcelis Technologies, Inc. Method of photoresist ash residue removal
US6494959B1 (en) * 2000-01-28 2002-12-17 Applied Materials, Inc. Process and apparatus for cleaning a silicon surface
US6528427B2 (en) 2001-03-30 2003-03-04 Lam Research Corporation Methods for reducing contamination of semiconductor substrates
CA2469368A1 (en) * 2001-12-06 2003-09-19 The Procter & Gamble Company Compositions and methods for removal of incidental soils from fabric articles via soil modification
KR100474594B1 (ko) * 2002-08-28 2005-03-10 주식회사 하이닉스반도체 반도체 소자의 세정방법
WO2006006169A2 (en) * 2004-07-14 2006-01-19 By-Pass, Inc. Material delivery system
JP2007079205A (ja) * 2005-09-15 2007-03-29 Ricoh Co Ltd 静電潜像現像用トナー、これを用いた現像剤および画像形成方法
DE502008001385D1 (de) * 2008-04-11 2010-11-04 Sika Technology Ag Verfahren zum Aufbringen einer Haftvermittler-Zusammensetzung auf ein Substrat
US20100032654A1 (en) * 2008-08-11 2010-02-11 Motorola, Inc. Semiconductor Device Having Silane Treated Interface
US9611552B2 (en) 2015-03-13 2017-04-04 Varian Semiconductor Equipment Associates, Inc. System and method for controllable non-volatile metal removal

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53135577A (en) * 1977-04-30 1978-11-27 Fujitsu Ltd Coating method of pmma resist
US4592926A (en) * 1984-05-21 1986-06-03 Machine Technology, Inc. Processing apparatus and method
JPS63199423A (ja) * 1987-02-16 1988-08-17 Toshiba Corp 半導体基板表面処理方法
US4768291A (en) * 1987-03-12 1988-09-06 Monarch Technologies Corporation Apparatus for dry processing a semiconductor wafer
US5049201A (en) * 1989-06-22 1991-09-17 International Business Machines Corporation Method of inhibiting corrosion in an electronic package
JPH03208343A (ja) * 1990-01-10 1991-09-11 Fujitsu Ltd 半導体基板用洗浄剤
US5094701A (en) * 1990-03-30 1992-03-10 Air Products And Chemicals, Inc. Cleaning agents comprising beta-diketone and beta-ketoimine ligands and a process for using the same
JP3074858B2 (ja) * 1991-11-13 2000-08-07 日本電気株式会社 半導体基板の表面処理装置及び表面処理方法

Also Published As

Publication number Publication date
KR940012523A (ko) 1994-06-23
KR970003887B1 (ko) 1997-03-22
EP0605785A3 (en) 1994-11-02
TW268973B (OSRAM) 1996-01-21
JPH06228592A (ja) 1994-08-16
US5332444A (en) 1994-07-26
EP0605785A2 (en) 1994-07-13

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