JP2522832Y2 - 薄膜トランジスタ - Google Patents

薄膜トランジスタ

Info

Publication number
JP2522832Y2
JP2522832Y2 JP7823990U JP7823990U JP2522832Y2 JP 2522832 Y2 JP2522832 Y2 JP 2522832Y2 JP 7823990 U JP7823990 U JP 7823990U JP 7823990 U JP7823990 U JP 7823990U JP 2522832 Y2 JP2522832 Y2 JP 2522832Y2
Authority
JP
Japan
Prior art keywords
layer
insulating layer
amorphous silicon
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP7823990U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0436256U (OSRAM
Inventor
高幸 山田
毅 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP7823990U priority Critical patent/JP2522832Y2/ja
Publication of JPH0436256U publication Critical patent/JPH0436256U/ja
Application granted granted Critical
Publication of JP2522832Y2 publication Critical patent/JP2522832Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
JP7823990U 1990-07-25 1990-07-25 薄膜トランジスタ Expired - Lifetime JP2522832Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7823990U JP2522832Y2 (ja) 1990-07-25 1990-07-25 薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7823990U JP2522832Y2 (ja) 1990-07-25 1990-07-25 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPH0436256U JPH0436256U (OSRAM) 1992-03-26
JP2522832Y2 true JP2522832Y2 (ja) 1997-01-16

Family

ID=31621338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7823990U Expired - Lifetime JP2522832Y2 (ja) 1990-07-25 1990-07-25 薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JP2522832Y2 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015005757A (ja) * 2009-02-13 2015-01-08 株式会社半導体エネルギー研究所 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015005757A (ja) * 2009-02-13 2015-01-08 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
JPH0436256U (OSRAM) 1992-03-26

Similar Documents

Publication Publication Date Title
US4700458A (en) Method of manufacture thin film transistor
US5075746A (en) Thin film field effect transistor and a method of manufacturing the same
US7648860B2 (en) Self-aligned thin-film transistor and method of forming same
JPS60234372A (ja) 半導体装置の製造方法
KR970006733B1 (ko) 박막트랜지스터 제조방법
JPS6132471A (ja) 薄膜トランジスタ
JPH0824185B2 (ja) 薄膜トランジスタ装置とその製造方法
JP2522832Y2 (ja) 薄膜トランジスタ
JPH059941B2 (OSRAM)
US4755859A (en) Thin film static induction transistor and method for manufacturing the same
JPH0384963A (ja) 薄膜トランジスタ
JPH06169086A (ja) 多結晶シリコン薄膜トランジスタ
JPS6222536B2 (OSRAM)
JP3173462B2 (ja) 薄膜トランジスタ
JPH06101478B2 (ja) 薄膜トランジスタとその製造方法
JP2844895B2 (ja) 高耐圧アモルファスシリコン薄膜トランジスタ
JPH06112485A (ja) 薄膜トランジスタアレイ
JP2646829B2 (ja) 高耐圧薄膜トランジスタ
JPH04302438A (ja) 薄膜トランジスタ
JPS62239579A (ja) 薄膜トランジスタの製造方法
JPH0680826B2 (ja) 薄膜トランジスタの製造方法
JPH0294576A (ja) ホトトランジスタ
KR100270363B1 (ko) 박막트랜지스터 제조방법
JPH05273585A (ja) 液晶表示装置
JPH02206131A (ja) 薄膜トランジスタの製造方法