JP2025509903A5 - - Google Patents
Info
- Publication number
- JP2025509903A5 JP2025509903A5 JP2024555980A JP2024555980A JP2025509903A5 JP 2025509903 A5 JP2025509903 A5 JP 2025509903A5 JP 2024555980 A JP2024555980 A JP 2024555980A JP 2024555980 A JP2024555980 A JP 2024555980A JP 2025509903 A5 JP2025509903 A5 JP 2025509903A5
- Authority
- JP
- Japan
- Prior art keywords
- die
- integrated device
- layer
- magnetic layer
- interconnects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/705,041 US12142561B2 (en) | 2022-03-25 | 2022-03-25 | Integrated device and integrated passive device comprising magnetic material |
| US17/705,041 | 2022-03-25 | ||
| PCT/US2023/064058 WO2023183722A1 (en) | 2022-03-25 | 2023-03-09 | Integrated device and integrated passive device comprising magnetic material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2025509903A JP2025509903A (ja) | 2025-04-11 |
| JP2025509903A5 true JP2025509903A5 (enExample) | 2026-03-03 |
Family
ID=85979732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024555980A Pending JP2025509903A (ja) | 2022-03-25 | 2023-03-09 | 磁気材料を含む集積デバイス及び集積受動デバイス |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12142561B2 (enExample) |
| EP (1) | EP4500593A1 (enExample) |
| JP (1) | JP2025509903A (enExample) |
| KR (1) | KR20240163616A (enExample) |
| CN (1) | CN118805252A (enExample) |
| TW (1) | TW202401725A (enExample) |
| WO (1) | WO2023183722A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240355728A1 (en) * | 2023-04-21 | 2024-10-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure |
| US20250037923A1 (en) * | 2023-07-27 | 2025-01-30 | Qualcomm Incorporated | Package comprising a substrate with inductors and a magnetic layer |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7319599B2 (en) * | 2003-10-01 | 2008-01-15 | Matsushita Electric Industrial Co., Ltd. | Module incorporating a capacitor, method for manufacturing the same, and capacitor used therefor |
| US8044755B2 (en) | 2008-04-09 | 2011-10-25 | National Semiconductor Corporation | MEMS power inductor |
| US20150340422A1 (en) * | 2014-05-23 | 2015-11-26 | Texas Instruments Incorporated | Method of manufacturing a micro-fabricated wafer level integrated inductor or transformer for high frequency switch mode power supplies |
| US10354950B2 (en) | 2016-02-25 | 2019-07-16 | Ferric Inc. | Systems and methods for microelectronics fabrication and packaging using a magnetic polymer |
| US10064277B2 (en) * | 2016-03-29 | 2018-08-28 | Ferric, Inc. | Integrated passive devices and assemblies including same |
| US12424543B2 (en) | 2019-11-26 | 2025-09-23 | Intel Corporation | Selective interconnects in back-end-of-line metallization stacks of integrated circuitry |
-
2022
- 2022-03-25 US US17/705,041 patent/US12142561B2/en active Active
-
2023
- 2023-03-09 KR KR1020247028946A patent/KR20240163616A/ko active Pending
- 2023-03-09 EP EP23716102.1A patent/EP4500593A1/en active Pending
- 2023-03-09 WO PCT/US2023/064058 patent/WO2023183722A1/en not_active Ceased
- 2023-03-09 TW TW112108686A patent/TW202401725A/zh unknown
- 2023-03-09 CN CN202380024768.XA patent/CN118805252A/zh active Pending
- 2023-03-09 JP JP2024555980A patent/JP2025509903A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI474459B (zh) | 具有穿透基板互連之微電子裝置及相關製造方法 | |
| CN103872012B (zh) | 天线装置和方法 | |
| US8618631B2 (en) | On-chip ferrite bead inductor | |
| US20220352106A1 (en) | Fully molded semiconductor structure with face mounted passives and method of making the same | |
| US5198385A (en) | Photolithographic formation of die-to-package airbridge in a semiconductor device | |
| KR101889674B1 (ko) | 집적 회로 디바이스들 및 방법들 | |
| TW201405735A (zh) | 柵格扇出晶圓級封裝和製造柵格扇出晶圓級封裝的方法 | |
| CN102569032B (zh) | 多层金属化薄膜叠加制作电感元件的方法 | |
| US10403567B2 (en) | Fabrication method of electronic package | |
| CN1638124A (zh) | 射频半导体器件及其制造方法 | |
| TW201034133A (en) | Integrated circuit micro-module | |
| TW200805616A (en) | Integrated circuit device and method of forming one or more passive components on a plurality of substrates | |
| JP2008193082A (ja) | 半導体装置及びその製造方法 | |
| US20080061443A1 (en) | Method of manufacturing semiconductor device | |
| TWI485808B (zh) | 半導體裝置及其製造方法 | |
| KR100889556B1 (ko) | 반도체 소자의 인덕터 및 그 제조방법 | |
| US10566414B2 (en) | BEOL capacitor through airgap metallization | |
| EP3132469B1 (en) | Pattern between pattern for low profile substrate | |
| US20210272907A1 (en) | Redistribution layer of fan-out package and manufacturing method thereof | |
| CN117637694A (zh) | 直接在暴露的导电通孔及互连件上的引线接合以及相关的系统及方法 | |
| CN101472399B (zh) | 内埋式线路板的制作方法 | |
| WO2010131079A1 (en) | Semiconductor Device Comprising a Metal System Including a Separate Inductor Metal Layer | |
| US10453787B2 (en) | Method and apparatus for forming multi-layered vias in sequentially fabricated circuits | |
| KR102646248B1 (ko) | 칩 재배선 구조 및 그 제조 방법 | |
| US20230335580A1 (en) | Electronic device with galvanic isolation and integration methods |