CN118805252A - 包括磁性材料的集成器件和集成无源器件 - Google Patents

包括磁性材料的集成器件和集成无源器件 Download PDF

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Publication number
CN118805252A
CN118805252A CN202380024768.XA CN202380024768A CN118805252A CN 118805252 A CN118805252 A CN 118805252A CN 202380024768 A CN202380024768 A CN 202380024768A CN 118805252 A CN118805252 A CN 118805252A
Authority
CN
China
Prior art keywords
die
interconnect
interconnects
magnetic layer
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380024768.XA
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English (en)
Chinese (zh)
Inventor
K·刘
J-H·兰
金钟海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN118805252A publication Critical patent/CN118805252A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
CN202380024768.XA 2022-03-25 2023-03-09 包括磁性材料的集成器件和集成无源器件 Pending CN118805252A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/705,041 US12142561B2 (en) 2022-03-25 2022-03-25 Integrated device and integrated passive device comprising magnetic material
US17/705,041 2022-03-25
PCT/US2023/064058 WO2023183722A1 (en) 2022-03-25 2023-03-09 Integrated device and integrated passive device comprising magnetic material

Publications (1)

Publication Number Publication Date
CN118805252A true CN118805252A (zh) 2024-10-18

Family

ID=85979732

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380024768.XA Pending CN118805252A (zh) 2022-03-25 2023-03-09 包括磁性材料的集成器件和集成无源器件

Country Status (7)

Country Link
US (1) US12142561B2 (enExample)
EP (1) EP4500593A1 (enExample)
JP (1) JP2025509903A (enExample)
KR (1) KR20240163616A (enExample)
CN (1) CN118805252A (enExample)
TW (1) TW202401725A (enExample)
WO (1) WO2023183722A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240355728A1 (en) * 2023-04-21 2024-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure
US20250037923A1 (en) * 2023-07-27 2025-01-30 Qualcomm Incorporated Package comprising a substrate with inductors and a magnetic layer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7319599B2 (en) * 2003-10-01 2008-01-15 Matsushita Electric Industrial Co., Ltd. Module incorporating a capacitor, method for manufacturing the same, and capacitor used therefor
US8044755B2 (en) 2008-04-09 2011-10-25 National Semiconductor Corporation MEMS power inductor
US20150340422A1 (en) * 2014-05-23 2015-11-26 Texas Instruments Incorporated Method of manufacturing a micro-fabricated wafer level integrated inductor or transformer for high frequency switch mode power supplies
US10354950B2 (en) 2016-02-25 2019-07-16 Ferric Inc. Systems and methods for microelectronics fabrication and packaging using a magnetic polymer
US10064277B2 (en) * 2016-03-29 2018-08-28 Ferric, Inc. Integrated passive devices and assemblies including same
US12424543B2 (en) 2019-11-26 2025-09-23 Intel Corporation Selective interconnects in back-end-of-line metallization stacks of integrated circuitry

Also Published As

Publication number Publication date
KR20240163616A (ko) 2024-11-19
JP2025509903A (ja) 2025-04-11
EP4500593A1 (en) 2025-02-05
WO2023183722A1 (en) 2023-09-28
US12142561B2 (en) 2024-11-12
US20230307355A1 (en) 2023-09-28
TW202401725A (zh) 2024-01-01

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