JP2025507015A5 - - Google Patents
Info
- Publication number
- JP2025507015A5 JP2025507015A5 JP2024552402A JP2024552402A JP2025507015A5 JP 2025507015 A5 JP2025507015 A5 JP 2025507015A5 JP 2024552402 A JP2024552402 A JP 2024552402A JP 2024552402 A JP2024552402 A JP 2024552402A JP 2025507015 A5 JP2025507015 A5 JP 2025507015A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- substrate
- exposing
- recess
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/690,715 | 2022-03-09 | ||
| US17/690,715 US12300500B2 (en) | 2022-03-09 | 2022-03-09 | Etching of polycrystalline semiconductors |
| PCT/US2023/014748 WO2023172584A1 (en) | 2022-03-09 | 2023-03-07 | Etching of polycrystalline semiconductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2025507015A JP2025507015A (ja) | 2025-03-13 |
| JP2025507015A5 true JP2025507015A5 (enExample) | 2026-03-11 |
Family
ID=87935870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024552402A Pending JP2025507015A (ja) | 2022-03-09 | 2023-03-07 | 多結晶半導体のエッチング |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12300500B2 (enExample) |
| JP (1) | JP2025507015A (enExample) |
| KR (1) | KR20240159879A (enExample) |
| TW (1) | TW202349493A (enExample) |
| WO (1) | WO2023172584A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12288812B2 (en) * | 2022-06-02 | 2025-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of fabrication thereof |
| US12424442B2 (en) * | 2022-12-28 | 2025-09-23 | Tokyo Electron Limited | Methods for forming semiconductor devices using modified photomask layer |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100618850B1 (ko) | 2004-07-22 | 2006-09-01 | 삼성전자주식회사 | 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법 |
| US20080286978A1 (en) * | 2007-05-17 | 2008-11-20 | Rong Chen | Etching and passivating for high aspect ratio features |
| US8916477B2 (en) | 2012-07-02 | 2014-12-23 | Novellus Systems, Inc. | Polysilicon etch with high selectivity |
| US9318343B2 (en) | 2014-06-11 | 2016-04-19 | Tokyo Electron Limited | Method to improve etch selectivity during silicon nitride spacer etch |
| US9679780B1 (en) | 2016-09-28 | 2017-06-13 | International Business Machines Corporation | Polysilicon residue removal in nanosheet MOSFETs |
| US10896816B2 (en) | 2017-09-26 | 2021-01-19 | International Business Machines Corporation | Silicon residue removal in nanosheet transistors |
| US10658491B2 (en) | 2018-06-15 | 2020-05-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Controlling profiles of replacement gates |
| JP7071884B2 (ja) * | 2018-06-15 | 2022-05-19 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US11120997B2 (en) * | 2018-08-31 | 2021-09-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Surface treatment for etch tuning |
| US11935758B2 (en) | 2019-04-29 | 2024-03-19 | Lam Research Corporation | Atomic layer etching for subtractive metal etch |
| US11355350B2 (en) | 2019-12-20 | 2022-06-07 | Tokyo Electron Limited | Etching method, substrate processing apparatus, and substrate processing system |
| US11302581B2 (en) | 2020-05-05 | 2022-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gate profile control through sidewall protection during etching |
-
2022
- 2022-03-09 US US17/690,715 patent/US12300500B2/en active Active
-
2023
- 2023-03-07 WO PCT/US2023/014748 patent/WO2023172584A1/en not_active Ceased
- 2023-03-07 JP JP2024552402A patent/JP2025507015A/ja active Pending
- 2023-03-07 KR KR1020247026466A patent/KR20240159879A/ko active Pending
- 2023-03-08 TW TW112108525A patent/TW202349493A/zh unknown
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