JP2024534873A5 - - Google Patents
Info
- Publication number
- JP2024534873A5 JP2024534873A5 JP2024513693A JP2024513693A JP2024534873A5 JP 2024534873 A5 JP2024534873 A5 JP 2024534873A5 JP 2024513693 A JP2024513693 A JP 2024513693A JP 2024513693 A JP2024513693 A JP 2024513693A JP 2024534873 A5 JP2024534873 A5 JP 2024534873A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- chalcogenide material
- processing chamber
- chemical species
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163260946P | 2021-09-07 | 2021-09-07 | |
| US63/260,946 | 2021-09-07 | ||
| PCT/US2022/042570 WO2023038870A1 (en) | 2021-09-07 | 2022-09-04 | Techniques and apparatuses for processing chalcogenides |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024534873A JP2024534873A (ja) | 2024-09-26 |
| JP2024534873A5 true JP2024534873A5 (enExample) | 2025-09-11 |
Family
ID=85506918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024513693A Pending JP2024534873A (ja) | 2021-09-07 | 2022-09-04 | カルコゲナイド処理技術および装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240381790A1 (enExample) |
| JP (1) | JP2024534873A (enExample) |
| KR (1) | KR20240055813A (enExample) |
| CN (1) | CN117941493A (enExample) |
| WO (1) | WO2023038870A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12615980B2 (en) | 2021-03-18 | 2026-04-28 | Lam Research Corporation | Etching of indium gallium zinc oxide |
| US20250285886A1 (en) * | 2024-03-11 | 2025-09-11 | Egtm Co., Ltd. | Method of treating thin films and method of manufacturing memory device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8394667B2 (en) * | 2010-07-14 | 2013-03-12 | Micron Technology, Inc. | Methods of forming memory cells, and methods of patterning chalcogenide-containing stacks |
| US9349939B2 (en) * | 2014-05-23 | 2016-05-24 | Qualcomm Incorporated | Etch-resistant protective coating for a magnetic tunnel junction device |
| US10454029B2 (en) * | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
| WO2018231695A1 (en) * | 2017-06-13 | 2018-12-20 | Tokyo Electron Limited | Process for patterning a magnetic tunnel junction |
| US10930849B2 (en) * | 2019-06-28 | 2021-02-23 | Micron Technology, Inc. | Techniques for forming memory structures |
-
2022
- 2022-09-04 JP JP2024513693A patent/JP2024534873A/ja active Pending
- 2022-09-04 WO PCT/US2022/042570 patent/WO2023038870A1/en not_active Ceased
- 2022-09-04 KR KR1020247011126A patent/KR20240055813A/ko active Pending
- 2022-09-04 CN CN202280060606.7A patent/CN117941493A/zh active Pending
- 2022-09-04 US US18/688,678 patent/US20240381790A1/en active Pending
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