CN117941493A - 用于加工硫族化物的技术和装置 - Google Patents

用于加工硫族化物的技术和装置 Download PDF

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Publication number
CN117941493A
CN117941493A CN202280060606.7A CN202280060606A CN117941493A CN 117941493 A CN117941493 A CN 117941493A CN 202280060606 A CN202280060606 A CN 202280060606A CN 117941493 A CN117941493 A CN 117941493A
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CN
China
Prior art keywords
wafer
substrate
temperature
etching
chalcogenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280060606.7A
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English (en)
Chinese (zh)
Inventor
约翰·霍昂
亚伦·林恩·罗赞
安德烈亚斯·菲舍尔
沈美华
索斯藤·贝恩德·莱尔
萨沙撒耶·瓦拉达拉简
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN117941493A publication Critical patent/CN117941493A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
CN202280060606.7A 2021-09-07 2022-09-04 用于加工硫族化物的技术和装置 Pending CN117941493A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163260946P 2021-09-07 2021-09-07
US63/260,946 2021-09-07
PCT/US2022/042570 WO2023038870A1 (en) 2021-09-07 2022-09-04 Techniques and apparatuses for processing chalcogenides

Publications (1)

Publication Number Publication Date
CN117941493A true CN117941493A (zh) 2024-04-26

Family

ID=85506918

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280060606.7A Pending CN117941493A (zh) 2021-09-07 2022-09-04 用于加工硫族化物的技术和装置

Country Status (5)

Country Link
US (1) US20240381790A1 (enExample)
JP (1) JP2024534873A (enExample)
KR (1) KR20240055813A (enExample)
CN (1) CN117941493A (enExample)
WO (1) WO2023038870A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12615980B2 (en) 2021-03-18 2026-04-28 Lam Research Corporation Etching of indium gallium zinc oxide
US20250285886A1 (en) * 2024-03-11 2025-09-11 Egtm Co., Ltd. Method of treating thin films and method of manufacturing memory device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8394667B2 (en) * 2010-07-14 2013-03-12 Micron Technology, Inc. Methods of forming memory cells, and methods of patterning chalcogenide-containing stacks
US9349939B2 (en) * 2014-05-23 2016-05-24 Qualcomm Incorporated Etch-resistant protective coating for a magnetic tunnel junction device
US10454029B2 (en) * 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
WO2018231695A1 (en) * 2017-06-13 2018-12-20 Tokyo Electron Limited Process for patterning a magnetic tunnel junction
US10930849B2 (en) * 2019-06-28 2021-02-23 Micron Technology, Inc. Techniques for forming memory structures

Also Published As

Publication number Publication date
US20240381790A1 (en) 2024-11-14
KR20240055813A (ko) 2024-04-29
JP2024534873A (ja) 2024-09-26
WO2023038870A1 (en) 2023-03-16

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