JP2024529567A5 - - Google Patents

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Publication number
JP2024529567A5
JP2024529567A5 JP2022545043A JP2022545043A JP2024529567A5 JP 2024529567 A5 JP2024529567 A5 JP 2024529567A5 JP 2022545043 A JP2022545043 A JP 2022545043A JP 2022545043 A JP2022545043 A JP 2022545043A JP 2024529567 A5 JP2024529567 A5 JP 2024529567A5
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JP
Japan
Prior art keywords
vertical column
trench
layer
gate
superjunction device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022545043A
Other languages
English (en)
Japanese (ja)
Other versions
JP7631353B2 (ja
JP2024529567A (ja
Filing date
Publication date
Priority claimed from US16/778,904 external-priority patent/US11316042B2/en
Application filed filed Critical
Publication of JP2024529567A publication Critical patent/JP2024529567A/ja
Publication of JP2024529567A5 publication Critical patent/JP2024529567A5/ja
Application granted granted Critical
Publication of JP7631353B2 publication Critical patent/JP7631353B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2022545043A 2020-01-31 2021-03-19 スーパージャンクションデバイスのための工程及び構造物 Active JP7631353B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/778,904 US11316042B2 (en) 2020-01-31 2020-01-31 Process and structure for a superjunction device
PCT/US2021/023142 WO2021155386A1 (en) 2020-01-31 2021-03-19 Process and structure for a superjunction device

Publications (3)

Publication Number Publication Date
JP2024529567A JP2024529567A (ja) 2024-08-07
JP2024529567A5 true JP2024529567A5 (https=) 2024-11-25
JP7631353B2 JP7631353B2 (ja) 2025-02-18

Family

ID=77062344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022545043A Active JP7631353B2 (ja) 2020-01-31 2021-03-19 スーパージャンクションデバイスのための工程及び構造物

Country Status (6)

Country Link
US (1) US11316042B2 (https=)
EP (1) EP4097763A4 (https=)
JP (1) JP7631353B2 (https=)
KR (1) KR102860640B1 (https=)
CN (1) CN115380387A (https=)
WO (1) WO2021155386A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11569345B2 (en) * 2020-11-23 2023-01-31 Alpha And Omega Semiconductor (Cayman) Ltd. Gas dopant doped deep trench super junction high voltage MOSFET
US12074196B2 (en) * 2021-07-08 2024-08-27 Applied Materials, Inc. Gradient doping epitaxy in superjunction to improve breakdown voltage
US20260068236A1 (en) * 2024-08-29 2026-03-05 Applied Materials, Inc. Trench-based super junction structures via sidewall doping

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19918198B4 (de) * 1998-04-23 2008-04-17 International Rectifier Corp., El Segundo Struktur eines P-Kanal-Graben-MOSFETs
US6313482B1 (en) 1999-05-17 2001-11-06 North Carolina State University Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein
DE19943143B4 (de) * 1999-09-09 2008-04-24 Infineon Technologies Ag Halbleiterbauelement für hohe Sperrspannungen bei gleichzeitig niedrigem Einschaltwiderstand und Verfahren zu dessen Herstellung
US7345342B2 (en) * 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6573558B2 (en) 2001-09-07 2003-06-03 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US7052982B2 (en) 2003-12-19 2006-05-30 Third Dimension (3D) Semiconductor, Inc. Method for manufacturing a superjunction device with wide mesas
US7465986B2 (en) * 2004-08-27 2008-12-16 International Rectifier Corporation Power semiconductor device including insulated source electrodes inside trenches
KR20090116702A (ko) 2007-01-09 2009-11-11 맥스파워 세미컨덕터 인크. 반도체 디바이스
US8815744B2 (en) 2008-04-24 2014-08-26 Fairchild Semiconductor Corporation Technique for controlling trench profile in semiconductor structures
JP5317560B2 (ja) 2008-07-16 2013-10-16 株式会社東芝 電力用半導体装置
US7829947B2 (en) * 2009-03-17 2010-11-09 Alpha & Omega Semiconductor Incorporated Bottom-drain LDMOS power MOSFET structure having a top drain strap
US8373208B2 (en) 2009-11-30 2013-02-12 Alpha And Omega Semiconductor Incorporated Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
US8372717B2 (en) 2009-12-28 2013-02-12 Force Mos Technology Co., Ltd. Method for manufacturing a super-junction trench MOSFET with resurf stepped oxides and trenched contacts
CN102709320B (zh) * 2012-02-15 2014-09-24 中山大学 纵向导通的GaN基MISFET 器件及其制作方法
US8765609B2 (en) * 2012-07-25 2014-07-01 Power Integrations, Inc. Deposit/etch for tapered oxide
US10256325B2 (en) 2012-11-08 2019-04-09 Infineon Technologies Austria Ag Radiation-hardened power semiconductor devices and methods of forming them
US9564515B2 (en) 2014-07-28 2017-02-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having super junction structure and method for manufacturing the same
US9171949B1 (en) 2014-09-24 2015-10-27 Alpha And Omega Semiconductor Incorporated Semiconductor device including superjunction structure formed using angled implant process
US20160268446A1 (en) * 2015-03-10 2016-09-15 United Silicon Carbide, Inc. Trench vertical jfet with improved threshold voltage control
JP6454447B2 (ja) 2015-12-02 2019-01-16 アーベーベー・シュバイツ・アーゲー 半導体装置の製造方法
CN107302023A (zh) * 2017-07-13 2017-10-27 深圳市金誉半导体有限公司 超结型沟槽功率mosfet器件及其制备方法

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