CN115380387A - 用于超结器件的工艺和结构 - Google Patents

用于超结器件的工艺和结构 Download PDF

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Publication number
CN115380387A
CN115380387A CN202180011391.5A CN202180011391A CN115380387A CN 115380387 A CN115380387 A CN 115380387A CN 202180011391 A CN202180011391 A CN 202180011391A CN 115380387 A CN115380387 A CN 115380387A
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China
Prior art keywords
vertical pillar
layer
gate
trench
contact region
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Pending
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CN202180011391.5A
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English (en)
Chinese (zh)
Inventor
A·安库季诺夫
S·S·杰奥尔杰斯库
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Power Integrations Inc
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Power Integrations Inc
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Publication of CN115380387A publication Critical patent/CN115380387A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/664—Inverted VDMOS transistors, i.e. source-down VDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/154—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN202180011391.5A 2020-01-31 2021-03-19 用于超结器件的工艺和结构 Pending CN115380387A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/778,904 US11316042B2 (en) 2020-01-31 2020-01-31 Process and structure for a superjunction device
PCT/US2021/023142 WO2021155386A1 (en) 2020-01-31 2021-03-19 Process and structure for a superjunction device

Publications (1)

Publication Number Publication Date
CN115380387A true CN115380387A (zh) 2022-11-22

Family

ID=77062344

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180011391.5A Pending CN115380387A (zh) 2020-01-31 2021-03-19 用于超结器件的工艺和结构

Country Status (6)

Country Link
US (1) US11316042B2 (https=)
EP (1) EP4097763A4 (https=)
JP (1) JP7631353B2 (https=)
KR (1) KR102860640B1 (https=)
CN (1) CN115380387A (https=)
WO (1) WO2021155386A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11569345B2 (en) * 2020-11-23 2023-01-31 Alpha And Omega Semiconductor (Cayman) Ltd. Gas dopant doped deep trench super junction high voltage MOSFET
US12074196B2 (en) * 2021-07-08 2024-08-27 Applied Materials, Inc. Gradient doping epitaxy in superjunction to improve breakdown voltage
US20260068236A1 (en) * 2024-08-29 2026-03-05 Applied Materials, Inc. Trench-based super junction structures via sidewall doping

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1234613A (zh) * 1998-04-23 1999-11-10 国际整流器有限公司 P沟道槽型金属氧化物半导体场效应晶体管结构
US20100013010A1 (en) * 2008-07-16 2010-01-21 Kabushiki Kaisha Toshiba Power semiconductor device
US20100237416A1 (en) * 2009-03-17 2010-09-23 Alpha & Omega Semiconductor Incorporated Bottom-drain ldmos power mosfet structure having a top drain strap
CN102709320A (zh) * 2012-02-15 2012-10-03 中山大学 纵向导通的GaN基MISFET 器件及其制作方法
US20140124851A1 (en) * 2012-11-08 2014-05-08 Infineon Technologies Austria Ag Radiation-Hardened Power Semiconductor Devices and Methods of Forming Them
US20160268446A1 (en) * 2015-03-10 2016-09-15 United Silicon Carbide, Inc. Trench vertical jfet with improved threshold voltage control
US20170148632A1 (en) * 2014-09-24 2017-05-25 Alpha And Omega Semiconductor Incorporated Semiconductor device including superjunction structure formed using angled implant process
CN107302023A (zh) * 2017-07-13 2017-10-27 深圳市金誉半导体有限公司 超结型沟槽功率mosfet器件及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313482B1 (en) 1999-05-17 2001-11-06 North Carolina State University Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein
DE19943143B4 (de) * 1999-09-09 2008-04-24 Infineon Technologies Ag Halbleiterbauelement für hohe Sperrspannungen bei gleichzeitig niedrigem Einschaltwiderstand und Verfahren zu dessen Herstellung
US7345342B2 (en) * 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6573558B2 (en) 2001-09-07 2003-06-03 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US7052982B2 (en) 2003-12-19 2006-05-30 Third Dimension (3D) Semiconductor, Inc. Method for manufacturing a superjunction device with wide mesas
US7465986B2 (en) * 2004-08-27 2008-12-16 International Rectifier Corporation Power semiconductor device including insulated source electrodes inside trenches
KR20090116702A (ko) 2007-01-09 2009-11-11 맥스파워 세미컨덕터 인크. 반도체 디바이스
US8815744B2 (en) 2008-04-24 2014-08-26 Fairchild Semiconductor Corporation Technique for controlling trench profile in semiconductor structures
US8373208B2 (en) 2009-11-30 2013-02-12 Alpha And Omega Semiconductor Incorporated Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
US8372717B2 (en) 2009-12-28 2013-02-12 Force Mos Technology Co., Ltd. Method for manufacturing a super-junction trench MOSFET with resurf stepped oxides and trenched contacts
US8765609B2 (en) * 2012-07-25 2014-07-01 Power Integrations, Inc. Deposit/etch for tapered oxide
US9564515B2 (en) 2014-07-28 2017-02-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having super junction structure and method for manufacturing the same
JP6454447B2 (ja) 2015-12-02 2019-01-16 アーベーベー・シュバイツ・アーゲー 半導体装置の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1234613A (zh) * 1998-04-23 1999-11-10 国际整流器有限公司 P沟道槽型金属氧化物半导体场效应晶体管结构
US20100013010A1 (en) * 2008-07-16 2010-01-21 Kabushiki Kaisha Toshiba Power semiconductor device
US20100237416A1 (en) * 2009-03-17 2010-09-23 Alpha & Omega Semiconductor Incorporated Bottom-drain ldmos power mosfet structure having a top drain strap
CN102709320A (zh) * 2012-02-15 2012-10-03 中山大学 纵向导通的GaN基MISFET 器件及其制作方法
US20140124851A1 (en) * 2012-11-08 2014-05-08 Infineon Technologies Austria Ag Radiation-Hardened Power Semiconductor Devices and Methods of Forming Them
US20170148632A1 (en) * 2014-09-24 2017-05-25 Alpha And Omega Semiconductor Incorporated Semiconductor device including superjunction structure formed using angled implant process
US20160268446A1 (en) * 2015-03-10 2016-09-15 United Silicon Carbide, Inc. Trench vertical jfet with improved threshold voltage control
CN107302023A (zh) * 2017-07-13 2017-10-27 深圳市金誉半导体有限公司 超结型沟槽功率mosfet器件及其制备方法

Also Published As

Publication number Publication date
KR20230062469A (ko) 2023-05-09
KR102860640B1 (ko) 2025-09-15
WO2021155386A1 (en) 2021-08-05
JP7631353B2 (ja) 2025-02-18
EP4097763A1 (en) 2022-12-07
US20210242338A1 (en) 2021-08-05
US11316042B2 (en) 2022-04-26
JP2024529567A (ja) 2024-08-07
EP4097763A4 (en) 2023-11-15

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