JP2024523238A - 集積デバイスおよび集積デバイスの上面を結合するブリッジを含むパッケージ - Google Patents

集積デバイスおよび集積デバイスの上面を結合するブリッジを含むパッケージ Download PDF

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JP2024523238A
JP2024523238A JP2023575919A JP2023575919A JP2024523238A JP 2024523238 A JP2024523238 A JP 2024523238A JP 2023575919 A JP2023575919 A JP 2023575919A JP 2023575919 A JP2023575919 A JP 2023575919A JP 2024523238 A JP2024523238 A JP 2024523238A
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Prior art keywords
integrated device
die
bridge
substrate
coupled
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JP2023575919A
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Japanese (ja)
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JP2024523238A5 (enExample
Inventor
バーラニー・チャヴァ
アビナッシュ・ロイ
スタンリー・スンチュル・ソン
ジョンヘ・キム
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クアルコム,インコーポレイテッド
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Publication of JP2024523238A publication Critical patent/JP2024523238A/ja
Publication of JP2024523238A5 publication Critical patent/JP2024523238A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/401Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2023575919A 2021-06-24 2022-05-23 集積デバイスおよび集積デバイスの上面を結合するブリッジを含むパッケージ Pending JP2024523238A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/357,811 2021-06-24
US17/357,811 US11830819B2 (en) 2021-06-24 2021-06-24 Package comprising integrated devices and bridge coupling top sides of integrated devices
PCT/US2022/030533 WO2022271376A1 (en) 2021-06-24 2022-05-23 Package comprising integrated devices and bridge coupling top sides of integrated devices

Publications (2)

Publication Number Publication Date
JP2024523238A true JP2024523238A (ja) 2024-06-28
JP2024523238A5 JP2024523238A5 (enExample) 2025-05-20

Family

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Family Applications (1)

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JP2023575919A Pending JP2024523238A (ja) 2021-06-24 2022-05-23 集積デバイスおよび集積デバイスの上面を結合するブリッジを含むパッケージ

Country Status (8)

Country Link
US (2) US11830819B2 (enExample)
EP (1) EP4360131A1 (enExample)
JP (1) JP2024523238A (enExample)
KR (1) KR20240025525A (enExample)
CN (1) CN117413358A (enExample)
BR (1) BR112023025604A2 (enExample)
TW (1) TW202303899A (enExample)
WO (1) WO2022271376A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11830819B2 (en) 2021-06-24 2023-11-28 Qualcomm Incorporated Package comprising integrated devices and bridge coupling top sides of integrated devices
US12463156B2 (en) * 2021-11-10 2025-11-04 Intel Corporation Packaging architectures for sub-terahertz radio frequency devices
US12599007B2 (en) * 2021-12-23 2026-04-07 Intel Corporation Composite IC die package including an electro-thermo-mechanical die (ETMD) with through substrate vias
TWI835546B (zh) * 2023-02-03 2024-03-11 福懋科技股份有限公司 半導體封裝

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7838337B2 (en) 2008-12-01 2010-11-23 Stats Chippac, Ltd. Semiconductor device and method of forming an interposer package with through silicon vias
US20140131854A1 (en) 2012-11-13 2014-05-15 Lsi Corporation Multi-chip module connection by way of bridging blocks
US10192810B2 (en) * 2013-06-28 2019-01-29 Intel Corporation Underfill material flow control for reduced die-to-die spacing in semiconductor packages
US10797022B2 (en) * 2017-10-06 2020-10-06 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
US10991635B2 (en) 2019-07-20 2021-04-27 International Business Machines Corporation Multiple chip bridge connector
US11133263B2 (en) 2019-09-17 2021-09-28 Intel Corporation High-density interconnects for integrated circuit packages
US11600526B2 (en) 2020-01-22 2023-03-07 iCometrue Company Ltd. Chip package based on through-silicon-via connector and silicon interconnection bridge
US11315902B2 (en) * 2020-02-12 2022-04-26 International Business Machines Corporation High bandwidth multichip module
US12159840B2 (en) * 2020-06-23 2024-12-03 Intel Corporation Scalable and interoperable PHYLESS die-to-die IO solution
US11450612B2 (en) * 2020-07-09 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacturing the same
US11830819B2 (en) 2021-06-24 2023-11-28 Qualcomm Incorporated Package comprising integrated devices and bridge coupling top sides of integrated devices

Also Published As

Publication number Publication date
TW202303899A (zh) 2023-01-16
WO2022271376A1 (en) 2022-12-29
US11830819B2 (en) 2023-11-28
BR112023025604A2 (pt) 2024-02-20
US20220415808A1 (en) 2022-12-29
EP4360131A1 (en) 2024-05-01
US12400966B2 (en) 2025-08-26
KR20240025525A (ko) 2024-02-27
CN117413358A (zh) 2024-01-16
US20240055356A1 (en) 2024-02-15

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