JP2024516374A - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP2024516374A
JP2024516374A JP2023563044A JP2023563044A JP2024516374A JP 2024516374 A JP2024516374 A JP 2024516374A JP 2023563044 A JP2023563044 A JP 2023563044A JP 2023563044 A JP2023563044 A JP 2023563044A JP 2024516374 A JP2024516374 A JP 2024516374A
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JP
Japan
Prior art keywords
light
sub
emitting elements
pixel region
emitting element
Prior art date
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Pending
Application number
JP2023563044A
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English (en)
Japanese (ja)
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JP2024516374A5 (https=
Inventor
ウ チェ,ジン
チュン ヤン,ビョン
ウ キム,ミン
クック パク,ソン
イル ジョン,ヒョン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
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Samsung Display Co Ltd
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Publication date
Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
Publication of JP2024516374A publication Critical patent/JP2024516374A/ja
Publication of JP2024516374A5 publication Critical patent/JP2024516374A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8514Wavelength conversion means characterised by their shape, e.g. plate or foil
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018Bonding of wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0363Manufacture or treatment of packages of optical field-shaping means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80Constructional details
    • H10H29/85Packages
    • H10H29/851Wavelength conversion means
    • H10H29/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H29/8512Wavelength conversion materials
    • H10H29/8513Wavelength conversion materials having two or more wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80Constructional details
    • H10H29/85Packages
    • H10H29/851Wavelength conversion means
    • H10H29/8514Wavelength conversion means characterised by their shape, e.g. plate or foil
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80Constructional details
    • H10H29/85Packages
    • H10H29/851Wavelength conversion means
    • H10H29/8515Wavelength conversion means not being in contact with the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80Constructional details
    • H10H29/85Packages
    • H10H29/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80Constructional details
    • H10H29/85Packages
    • H10H29/857Interconnections

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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
JP2023563044A 2021-04-30 2022-01-20 表示装置 Pending JP2024516374A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2021-0056924 2021-04-30
KR1020210056924A KR102871341B1 (ko) 2021-04-30 2021-04-30 표시 장치
PCT/KR2022/001067 WO2022231095A1 (ko) 2021-04-30 2022-01-20 표시 장치

Publications (2)

Publication Number Publication Date
JP2024516374A true JP2024516374A (ja) 2024-04-15
JP2024516374A5 JP2024516374A5 (https=) 2025-01-27

Family

ID=83758758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023563044A Pending JP2024516374A (ja) 2021-04-30 2022-01-20 表示装置

Country Status (7)

Country Link
US (2) US12293998B2 (https=)
EP (1) EP4333067A4 (https=)
JP (1) JP2024516374A (https=)
KR (1) KR102871341B1 (https=)
CN (1) CN115274747A (https=)
TW (1) TW202301710A (https=)
WO (1) WO2022231095A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230050545A (ko) 2021-10-07 2023-04-17 삼성디스플레이 주식회사 표시 장치
KR20240103143A (ko) * 2022-12-26 2024-07-04 삼성디스플레이 주식회사 표시 장치
FR3151696B1 (fr) * 2023-07-28 2025-10-03 Thales Sa Dispositif d’affichage électronique de type écran à pixels émissifs, pour poste de pilotage d’aéronef
TWI845403B (zh) * 2023-08-25 2024-06-11 友達光電股份有限公司 顯示裝置及其製造方法
FR3154530B1 (fr) 2023-10-23 2025-12-12 Thales Sa Dispositif d’affichage électronique avec anticrénelage
KR20260024393A (ko) * 2024-08-08 2026-02-23 삼성디스플레이 주식회사 차량용 표시 장치, 이의 구동 방법, 및 전자 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006310043A (ja) * 2005-04-27 2006-11-09 Sony Corp バックライト装置及び液晶表示装置
KR20200038389A (ko) * 2018-10-02 2020-04-13 삼성디스플레이 주식회사 표시 장치

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US7161185B2 (en) * 2003-06-27 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US8330352B2 (en) * 2007-11-13 2012-12-11 Samsung Display Co., Ltd. Organic light emitting diode display and method for manufacturing the same
JP4623138B2 (ja) * 2008-05-21 2011-02-02 ソニー株式会社 表示装置および電子機器
JP2010251360A (ja) 2009-04-10 2010-11-04 Sony Corp 表示装置の製造方法および表示装置
US8933433B2 (en) 2012-07-30 2015-01-13 LuxVue Technology Corporation Method and structure for receiving a micro device
EP2999014B1 (en) * 2013-05-13 2020-01-22 Seoul Semiconductor Co., Ltd. Manufacturing method of light-emitting device package
JP2015175921A (ja) * 2014-03-13 2015-10-05 株式会社ジャパンディスプレイ 表示装置
KR102699567B1 (ko) 2016-07-11 2024-08-29 삼성디스플레이 주식회사 초소형 발광 소자를 포함하는 픽셀 구조체, 표시장치 및 그 제조방법
WO2018020368A1 (en) * 2016-07-29 2018-02-01 Semiconductor Energy Laboratory Co., Ltd. Display method, display device, electronic device, non-temporary memory medium, and program
JP2018112859A (ja) 2017-01-11 2018-07-19 株式会社ジャパンディスプレイ 表示装置
KR102385091B1 (ko) 2017-03-07 2022-04-12 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
FR3068819B1 (fr) 2017-07-04 2019-11-08 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif d'affichage a leds
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KR102587732B1 (ko) * 2018-05-28 2023-10-12 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR102593430B1 (ko) 2018-07-09 2023-10-26 삼성디스플레이 주식회사 발광 장치 및 이를 구비한 표시 장치
KR102524569B1 (ko) 2018-09-21 2023-04-24 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR102536844B1 (ko) 2018-10-15 2023-05-30 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR102668034B1 (ko) 2018-11-14 2024-05-23 서울대학교산학협력단 표시 장치
WO2020194427A1 (ja) * 2019-03-25 2020-10-01 シャープ株式会社 表示装置及びその製造方法
JP2021034441A (ja) 2019-08-20 2021-03-01 株式会社ジャパンディスプレイ 表示装置
KR102751425B1 (ko) * 2019-09-04 2025-01-13 삼성디스플레이 주식회사 표시 장치
KR102893169B1 (ko) * 2019-12-19 2025-12-01 삼성디스플레이 주식회사 표시 장치
KR20220087669A (ko) 2020-12-17 2022-06-27 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006310043A (ja) * 2005-04-27 2006-11-09 Sony Corp バックライト装置及び液晶表示装置
KR20200038389A (ko) * 2018-10-02 2020-04-13 삼성디스플레이 주식회사 표시 장치

Also Published As

Publication number Publication date
EP4333067A1 (en) 2024-03-06
CN115274747A (zh) 2022-11-01
US20220352131A1 (en) 2022-11-03
KR20220149884A (ko) 2022-11-09
KR102871341B1 (ko) 2025-10-16
EP4333067A4 (en) 2025-04-23
TW202301710A (zh) 2023-01-01
US20250273642A1 (en) 2025-08-28
US12293998B2 (en) 2025-05-06
WO2022231095A1 (ko) 2022-11-03

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