JP2024502029A5 - - Google Patents
Info
- Publication number
- JP2024502029A5 JP2024502029A5 JP2023539960A JP2023539960A JP2024502029A5 JP 2024502029 A5 JP2024502029 A5 JP 2024502029A5 JP 2023539960 A JP2023539960 A JP 2023539960A JP 2023539960 A JP2023539960 A JP 2023539960A JP 2024502029 A5 JP2024502029 A5 JP 2024502029A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- switch element
- semiconductor
- region
- support structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/136,816 | 2020-12-29 | ||
| US17/136,816 US11557673B2 (en) | 2020-12-29 | 2020-12-29 | Hybrid semiconductor device |
| PCT/US2021/065280 WO2022146964A1 (en) | 2020-12-29 | 2021-12-28 | Hybrid semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024502029A JP2024502029A (ja) | 2024-01-17 |
| JP2024502029A5 true JP2024502029A5 (https=) | 2024-12-17 |
Family
ID=82117828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023539960A Pending JP2024502029A (ja) | 2020-12-29 | 2021-12-28 | ハイブリッド半導体デバイス |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11557673B2 (https=) |
| EP (1) | EP4272240B1 (https=) |
| JP (1) | JP2024502029A (https=) |
| CN (1) | CN116762175A (https=) |
| WO (1) | WO2022146964A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11557673B2 (en) * | 2020-12-29 | 2023-01-17 | Texas Instruments Incorporated | Hybrid semiconductor device |
| US11978753B2 (en) * | 2021-05-04 | 2024-05-07 | Omnivision Technologies, Inc. | Process to release silicon stress in forming CMOS image sensor |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07254706A (ja) * | 1993-11-29 | 1995-10-03 | Texas Instr Inc <Ti> | 高電圧デバイス構造およびその製造方法 |
| US5736766A (en) | 1994-12-12 | 1998-04-07 | Texas Instruments Incorporated | Medium voltage LDMOS device and method of fabrication |
| US5734180A (en) * | 1995-06-02 | 1998-03-31 | Texas Instruments Incorporated | High-performance high-voltage device structures |
| US6424005B1 (en) | 1998-12-03 | 2002-07-23 | Texas Instruments Incorporated | LDMOS power device with oversized dwell |
| US7045845B2 (en) | 2002-08-16 | 2006-05-16 | Semiconductor Components Industries, L.L.C. | Self-aligned vertical gate semiconductor device |
| JP2008042166A (ja) | 2006-07-12 | 2008-02-21 | Matsushita Electric Ind Co Ltd | 縦型ゲート半導体装置及びその製造方法 |
| KR101002336B1 (ko) * | 2008-02-04 | 2010-12-20 | 엘지디스플레이 주식회사 | 나노 디바이스, 이를 포함하는 트랜지스터, 나노 디바이스및 이를 포함하는 트랜지스터의 제조 방법 |
| CN103094337B (zh) | 2011-10-27 | 2015-08-19 | 中芯国际集成电路制造(上海)有限公司 | Ldnmos结构及其制造方法 |
| KR20150020930A (ko) | 2013-08-19 | 2015-02-27 | 삼성전자주식회사 | 고전압 반도체 장치 및 이의 제조 방법 |
| CN105789298B (zh) | 2014-12-19 | 2019-06-07 | 无锡华润上华科技有限公司 | 横向绝缘栅双极型晶体管及其制造方法 |
| EP3062349B1 (en) | 2015-02-25 | 2019-10-09 | Nxp B.V. | Semiconductor device comprising a switch |
| DE102015106688B4 (de) | 2015-04-29 | 2020-03-12 | Infineon Technologies Ag | Schalter mit einem feldeffekttransistor, insbesondere in einer integrierten schaltung zur verwendung in systemen mit lasten |
| US9911817B2 (en) | 2015-07-17 | 2018-03-06 | Cambridge Electronics, Inc. | Field-plate structures for semiconductor devices |
| WO2017111914A1 (en) * | 2015-12-21 | 2017-06-29 | Intel Corporation | Low band gap semiconductor devices having reduced gate induced drain leakage (gidl) and their methods of fabrication |
| JP6706330B2 (ja) * | 2016-01-18 | 2020-06-03 | 日本テキサス・インスツルメンツ合同会社 | 金属充填ディープソースコンタクトを備えたパワーｍｏｓｆｅｔ |
| EP3261120B1 (en) | 2016-06-24 | 2019-05-01 | Nxp B.V. | Semiconductor switch device |
| US10680100B2 (en) * | 2018-07-03 | 2020-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Field structure and methodology |
| US10971615B2 (en) * | 2018-08-08 | 2021-04-06 | Qualcomm Incorporated | High power performance gallium nitride high electron mobility transistor with ledges and field plates |
| US10790389B2 (en) * | 2018-08-14 | 2020-09-29 | Silanna Asia Pte Ltd | Source contact formation of MOSFET with gate shield buffer for pitch reduction |
| US11557673B2 (en) * | 2020-12-29 | 2023-01-17 | Texas Instruments Incorporated | Hybrid semiconductor device |
-
2020
- 2020-12-29 US US17/136,816 patent/US11557673B2/en active Active
-
2021
- 2021-12-28 CN CN202180087763.2A patent/CN116762175A/zh active Pending
- 2021-12-28 WO PCT/US2021/065280 patent/WO2022146964A1/en not_active Ceased
- 2021-12-28 JP JP2023539960A patent/JP2024502029A/ja active Pending
- 2021-12-28 EP EP21916331.8A patent/EP4272240B1/en active Active
-
2022
- 2022-12-15 US US18/066,511 patent/US20230115019A1/en active Pending
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