JP2024502029A - ハイブリッド半導体デバイス - Google Patents

ハイブリッド半導体デバイス Download PDF

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JP2024502029A
JP2024502029A JP2023539960A JP2023539960A JP2024502029A JP 2024502029 A JP2024502029 A JP 2024502029A JP 2023539960 A JP2023539960 A JP 2023539960A JP 2023539960 A JP2023539960 A JP 2023539960A JP 2024502029 A JP2024502029 A JP 2024502029A
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region
switch element
semiconductor device
semiconductor
support structure
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JP2024502029A5 (https=
Inventor
ボグスロー コクン クリストファー
リッツマン エドワーズ ヘンリー
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テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H10D30/0287—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0295—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2023539960A 2020-12-29 2021-12-28 ハイブリッド半導体デバイス Pending JP2024502029A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/136,816 2020-12-29
US17/136,816 US11557673B2 (en) 2020-12-29 2020-12-29 Hybrid semiconductor device
PCT/US2021/065280 WO2022146964A1 (en) 2020-12-29 2021-12-28 Hybrid semiconductor device

Publications (2)

Publication Number Publication Date
JP2024502029A true JP2024502029A (ja) 2024-01-17
JP2024502029A5 JP2024502029A5 (https=) 2024-12-17

Family

ID=82117828

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Application Number Title Priority Date Filing Date
JP2023539960A Pending JP2024502029A (ja) 2020-12-29 2021-12-28 ハイブリッド半導体デバイス

Country Status (5)

Country Link
US (2) US11557673B2 (https=)
EP (1) EP4272240B1 (https=)
JP (1) JP2024502029A (https=)
CN (1) CN116762175A (https=)
WO (1) WO2022146964A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11557673B2 (en) * 2020-12-29 2023-01-17 Texas Instruments Incorporated Hybrid semiconductor device
US11978753B2 (en) * 2021-05-04 2024-05-07 Omnivision Technologies, Inc. Process to release silicon stress in forming CMOS image sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254706A (ja) * 1993-11-29 1995-10-03 Texas Instr Inc <Ti> 高電圧デバイス構造およびその製造方法
JP2011518424A (ja) * 2008-02-04 2011-06-23 エルジー ディスプレイ カンパニー リミテッド ナノデバイス、これを含むトランジスタ、ナノデバイス及びこれを含むトランジスタの製造方法
JP2019505994A (ja) * 2016-01-18 2019-02-28 日本テキサス・インスツルメンツ合同会社 金属充填ディープソースコンタクトを備えたパワーｍｏｓｆｅｔ

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US5736766A (en) 1994-12-12 1998-04-07 Texas Instruments Incorporated Medium voltage LDMOS device and method of fabrication
US5734180A (en) * 1995-06-02 1998-03-31 Texas Instruments Incorporated High-performance high-voltage device structures
US6424005B1 (en) 1998-12-03 2002-07-23 Texas Instruments Incorporated LDMOS power device with oversized dwell
US7045845B2 (en) 2002-08-16 2006-05-16 Semiconductor Components Industries, L.L.C. Self-aligned vertical gate semiconductor device
JP2008042166A (ja) 2006-07-12 2008-02-21 Matsushita Electric Ind Co Ltd 縦型ゲート半導体装置及びその製造方法
CN103094337B (zh) 2011-10-27 2015-08-19 中芯国际集成电路制造(上海)有限公司 Ldnmos结构及其制造方法
KR20150020930A (ko) 2013-08-19 2015-02-27 삼성전자주식회사 고전압 반도체 장치 및 이의 제조 방법
CN105789298B (zh) 2014-12-19 2019-06-07 无锡华润上华科技有限公司 横向绝缘栅双极型晶体管及其制造方法
EP3062349B1 (en) 2015-02-25 2019-10-09 Nxp B.V. Semiconductor device comprising a switch
DE102015106688B4 (de) 2015-04-29 2020-03-12 Infineon Technologies Ag Schalter mit einem feldeffekttransistor, insbesondere in einer integrierten schaltung zur verwendung in systemen mit lasten
US9911817B2 (en) 2015-07-17 2018-03-06 Cambridge Electronics, Inc. Field-plate structures for semiconductor devices
WO2017111914A1 (en) * 2015-12-21 2017-06-29 Intel Corporation Low band gap semiconductor devices having reduced gate induced drain leakage (gidl) and their methods of fabrication
EP3261120B1 (en) 2016-06-24 2019-05-01 Nxp B.V. Semiconductor switch device
US10680100B2 (en) * 2018-07-03 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Field structure and methodology
US10971615B2 (en) * 2018-08-08 2021-04-06 Qualcomm Incorporated High power performance gallium nitride high electron mobility transistor with ledges and field plates
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US11557673B2 (en) * 2020-12-29 2023-01-17 Texas Instruments Incorporated Hybrid semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254706A (ja) * 1993-11-29 1995-10-03 Texas Instr Inc <Ti> 高電圧デバイス構造およびその製造方法
JP2011518424A (ja) * 2008-02-04 2011-06-23 エルジー ディスプレイ カンパニー リミテッド ナノデバイス、これを含むトランジスタ、ナノデバイス及びこれを含むトランジスタの製造方法
JP2019505994A (ja) * 2016-01-18 2019-02-28 日本テキサス・インスツルメンツ合同会社 金属充填ディープソースコンタクトを備えたパワーｍｏｓｆｅｔ

Also Published As

Publication number Publication date
WO2022146964A1 (en) 2022-07-07
TW202232761A (zh) 2022-08-16
US20230115019A1 (en) 2023-04-13
CN116762175A (zh) 2023-09-15
US20220209007A1 (en) 2022-06-30
EP4272240A4 (en) 2024-02-21
EP4272240B1 (en) 2025-07-09
US11557673B2 (en) 2023-01-17
EP4272240A1 (en) 2023-11-08

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