JP2017163142A - バイアスされた縦方向フィールドプレートを使用したldmosトランジスタのドリフト領域フィールド制御、ldmosトランジスタ、及びldmosトランジスタを製造する方法 - Google Patents
バイアスされた縦方向フィールドプレートを使用したldmosトランジスタのドリフト領域フィールド制御、ldmosトランジスタ、及びldmosトランジスタを製造する方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000007943 implant Substances 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims 2
- 230000005684 electric field Effects 0.000 abstract description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 19
- 229920005591 polysilicon Polymers 0.000 description 19
- 238000002513 implantation Methods 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
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- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 229910052787 antimony Inorganic materials 0.000 description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
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- 230000005669 field effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
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Abstract
Description
Claims (22)
- 活性領域上に相互接続領域を有する半導体ダイを備える横方向拡散金属酸化膜半導体(LDMOS)トランジスタであって、
前記相互接続領域は、
前記LDMOSトランジスタのゲートであって、誘電体によって前記活性領域から絶縁された、ゲート
を備え、
前記活性領域は、
前記ゲートの端に縦方向で位置合わせされた前記LDMOSトランジスタのソースと、
前記LDMOSトランジスタのドレインであって、
ドレインコンタクト領域と、
前記誘電体によって前記ゲートから鉛直方向で絶縁されたドリフト領域と
を備える、ドレインと、
前記LDMOSトランジスタのボディであって、
ボディコンタクト領域と、
前記ソースと前記ドリフト領域との間に縦方向で並置されたチャネル領域であって、前記誘電体によって前記ゲートから鉛直方向で絶縁された、チャネル領域と
を備える、ボディと、
実質的に前記ドリフト領域に平行でありかつ前記ドリフト領域から鉛直方向で分離された、下部RESURF領域と、
上の前記ドリフト領域と下の前記下部RESURF領域との両方に隣接しかつそれらの間に鉛直方向で噛み合った、上部RESURF領域と
を備え、
前記ドレインコンタクト領域と前記ボディコンタクト領域との間の第1の縦方向距離は、前記ドレインコンタクト領域と前記下部RESURF領域の端との間の第2の縦方向距離より大きい、
LDMOSトランジスタ。 - 前記活性領域は、基板上に成長されるエピタキシャル層を備える、請求項1に記載のLDMOSトランジスタ。
- 前記下部RESURF領域の前記端は、前記下部RESURF領域の正味ドーパント濃度が所定の閾値にある縦方向位置として規定される、請求項1又は請求項2に記載のLDMOSトランジスタ。
- 前記所定の閾値は、エピタキシャル層の正味ドーパント濃度の10倍として規定される、請求項3に記載のLDMOSトランジスタ。
- 前記所定の閾値は、基板の正味ドーパント濃度の10倍として規定される、請求項3に記載のLDMOSトランジスタ。
- 前記上部RESURF領域は、前記ボディに導電的に結合される、請求項1〜請求項5の何れか1項に記載のLDMOSトランジスタ。
- 前記下部RESURF領域は、鉛直電導経路を介して前記ドレインに導電的に結合される、請求項1〜請求項6の何れか1項に記載のLDMOSトランジスタ。
- 前記鉛直電導経路は、前記下部RESURF領域の正味ドーパント濃度及び前記ドリフト領域の前記正味ドーパント濃度の両方より低い正味ドーパント濃度を有する、請求項7に記載のLDMOSトランジスタ。
- 基板は第1の導電率型を有し、前記エピタキシャル層は第2の導電率型を有する、請求項2に記載のLDMOSトランジスタ。
- 前記ボディは第1の導電率型を有し、前記ソース及び前記ドレインは両方とも第2の導電率型を有する、請求項1〜請求項9の何れか1項に記載のLDMOSトランジスタ。
- 前記下部RESURF領域の前記端から、かつ前記ボディコンタクト領域の下を延在する拡張領域を更に備え、前記拡張領域は、前記下部RESURF領域の導電率型と同じ導電率型を有し、前記拡張領域は、前記下部RESURF領域の正味ドーパント濃度より低い正味ドーパント濃度を有する、請求項1〜請求項10の何れか1項に記載のLDMOSトランジスタ。
- 前記拡張領域は、エピタキシャル層の正味ドーパント濃度と実質的に等しい正味ドーパント濃度を有する、請求項11に記載のLDMOSトランジスタ。
- 請求項1に記載のLDMOSトランジスタを製造する方法であって、前記方法は、
第1の型のドーパント種の基板を備え、
第2の型のドーパント種を使用して前記基板内に前記下部RESURF領域を注入し、
前記第2の型のドーパント種のエピタキシャル層を成長させ、
前記第1の型のドーパント種を使用して前記エピタキシャル層内に前記上部RESURF領域を注入すること、
を含む方法。 - 前記上部RESURF領域を注入することは、500,000ボルトより大きな注入エネルギーを使用する、請求項13に記載の方法。
- 前記上部RESURF領域を注入することは、1,000,000ボルトより大きな注入エネルギーを使用する、請求項13に記載の方法。
- 上から下への順序での、
i)導電ゲート、
ii)誘電体、
iii)ドレインのドリフト領域、
iv)横方向拡散金属酸化膜半導体(LDMOS)トランジスタのソース端において前記LDMOSトランジスタのボディに導電的に接続される、第1のRESURF領域、及び
v)鉛直電導領域を介して前記LDMOSトランジスタのドレイン端においてドレインに鉛直方向で導電的に接続される、第2のRESURF領域、
という層の鉛直方向の並びを備えるLDMOSトランジスタであって、
前記第1のRESURF領域はドレインコンタクト領域を囲む環形として形成され、
前記ドリフト領域及び前記第2のRESURF領域は両方とも、前記ドレインコンタクト領域から外側に延在する閉形の形状(closed form geometries)であり、それぞれが前記第1のRESURF領域の内側環状部分と環状の冶金的接合を形成する、
LDMOSトランジスタ。 - 前記ボディは、前記ボディと前記第2のRESURF領域との間に環状のギャップを形成しながら、前記第2のRESURF領域を取り囲む環形を形成する、請求項16に記載のLDMOSトランジスタ。
- 前記ボディはボディコンタクト領域と活性ボディ領域とを有し、前記ボディコンタクト領域は、前記活性ボディ領域の正味ドーパント濃度より大きな正味ドーパント濃度を有し、ボディコンタクト領域とドレインコンタクトとの間の第1の縦方向距離は、前記第2のRESURF領域のソース端と前記ドレインコンタクト領域との間の第2の縦方向距離より大きい、請求項16に記載のLDMOSトランジスタ。
- 前記ボディはボディコンタクト領域と活性ボディ領域とを有し、前記ボディコンタクト領域は、前記活性ボディ領域の正味ドーパント濃度より大きな正味ドーパント濃度を有し、前記ボディコンタクト領域と前記第2のRESURF領域のソース端との間の距離は、前記ボディコンタクト領域と前記第2のRESURF領域との間の鉛直方向距離より大きい、請求項16に記載のLDMOSトランジスタ。
- LDMOSトランジスタを製造する方法であって、前記方法は、
第1の型のドーパント種の基板を備え、
第2の型のドーパント種を使用して前記基板内に下部RESURF層を注入し、
前記第2の型のドーパント種のエピタキシャル層を成長させ、
前記第1の型のドーパント種を使用して前記エピタキシャル層内に上部RESURF層を注入し、
前記第2の型のドーパント種を使用して前記エピタキシャル層内にドリフト領域を注入し、
前記第2の型のドーパント種を使用して前記エピタキシャル層内にソースコンタクト領域及びドレインコンタクト領域を注入し、
前記第1の型のドーパント種を使用して前記エピタキシャル層内にボディ領域を注入すること、
を含み、前記下部RESURF層は、前記エピタキシャル層の鉛直電導領域を介して、前記ドリフト領域と無接合電気連通状態にあり、前記鉛直電導領域は、前記上部RESURF層と共に注入されないようにマスキングされ、それにより前記第2の型の正味ドーパント濃度を維持する、
方法。 - 前記上部RESURF層を注入することは、500,000ボルトより大きな注入エネルギーを使用する、請求項20に記載の方法。
- 前記上部RESURF層を注入することは、1,000,000ボルトより大きな注入エネルギーを使用する、請求項20に記載の方法。
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