JP2024501567A - 単結晶シリコンインゴットの成長中における緩衝部材の使用 - Google Patents

単結晶シリコンインゴットの成長中における緩衝部材の使用 Download PDF

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Publication number
JP2024501567A
JP2024501567A JP2023540218A JP2023540218A JP2024501567A JP 2024501567 A JP2024501567 A JP 2024501567A JP 2023540218 A JP2023540218 A JP 2023540218A JP 2023540218 A JP2023540218 A JP 2023540218A JP 2024501567 A JP2024501567 A JP 2024501567A
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JP
Japan
Prior art keywords
melt
single crystal
ingot
defects
silicon ingot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023540218A
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English (en)
Japanese (ja)
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JP2024501567A5 (enExample
Inventor
パンノッキア，マッテオ
マルケーゼ，フランチェスカ
ワイ キット，ジェイムズ ホー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
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GlobalWafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GlobalWafers Co Ltd filed Critical GlobalWafers Co Ltd
Publication of JP2024501567A publication Critical patent/JP2024501567A/ja
Publication of JP2024501567A5 publication Critical patent/JP2024501567A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023540218A 2020-12-31 2021-12-29 単結晶シリコンインゴットの成長中における緩衝部材の使用 Pending JP2024501567A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063132712P 2020-12-31 2020-12-31
US202063132713P 2020-12-31 2020-12-31
US63/132,712 2020-12-31
US63/132,713 2020-12-31
PCT/EP2021/087786 WO2022144387A1 (en) 2020-12-31 2021-12-29 Use of buffer members during growth of single crystal silicon ingots

Publications (2)

Publication Number Publication Date
JP2024501567A true JP2024501567A (ja) 2024-01-12
JP2024501567A5 JP2024501567A5 (enExample) 2025-01-08

Family

ID=80001458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023540218A Pending JP2024501567A (ja) 2020-12-31 2021-12-29 単結晶シリコンインゴットの成長中における緩衝部材の使用

Country Status (7)

Country Link
US (2) US11767610B2 (enExample)
EP (1) EP4271862B1 (enExample)
JP (1) JP2024501567A (enExample)
KR (1) KR102939619B1 (enExample)
CN (1) CN118854432B (enExample)
TW (1) TWI883302B (enExample)
WO (1) WO2022144387A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4219802A1 (en) * 2020-02-20 2023-08-02 GlobalWafers Co., Ltd. Method for forming a unitized crucible assembly and crucible assembly
US12146236B2 (en) 2021-06-07 2024-11-19 Globalwafers Co., Ltd Use of quartz plates during growth of single crystal silicon ingots
US12410538B2 (en) 2021-11-08 2025-09-09 Globalwafers Co., Ltd. Use of arrays of quartz particles during single crystal silicon ingot production
US20240352616A1 (en) * 2023-04-18 2024-10-24 Globalwafers Co., Ltd. Systems and methods for microvoid analysis in crystals grown by continuous czochralski pullers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669298A (en) * 1979-11-13 1981-06-10 Nec Corp Method of growing single crystal of semiconductor
US6663708B1 (en) * 2000-09-22 2003-12-16 Mitsubishi Materials Silicon Corporation Silicon wafer, and manufacturing method and heat treatment method of the same
JP3624827B2 (ja) * 2000-12-20 2005-03-02 三菱住友シリコン株式会社 シリコン単結晶の製造方法
DE10250822B4 (de) * 2002-10-31 2006-09-28 Siltronic Ag Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
JP2006273631A (ja) * 2005-03-28 2006-10-12 Komatsu Electronic Metals Co Ltd シリコン単結晶の製造方法およびアニールウェーハおよびアニールウェーハの製造方法
JP2011054821A (ja) * 2009-09-03 2011-03-17 Sumco Corp エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
WO2016152057A1 (ja) * 2015-03-25 2016-09-29 株式会社トクヤマ 投入装置、塊状シリコン原料の供給方法、シリコン単結晶製造装置およびシリコン単結晶の製造方法
US20180291524A1 (en) * 2015-05-01 2018-10-11 Corner Star Limited Methods for producing single crystal ingots doped with volatile dopants
WO2016179022A1 (en) * 2015-05-01 2016-11-10 Sunedison, Inc. Methods for producing single crystal ingots doped with volatile dopants
US10221500B2 (en) * 2017-01-04 2019-03-05 Corner Star Limited System for forming an ingot including crucible and conditioning members
US10407797B2 (en) 2017-05-04 2019-09-10 Corner Start Limited Crystal pulling system and method including crucible and barrier

Also Published As

Publication number Publication date
EP4271862B1 (en) 2025-08-20
US12091769B2 (en) 2024-09-17
US11767610B2 (en) 2023-09-26
TW202231942A (zh) 2022-08-16
WO2022144387A1 (en) 2022-07-07
EP4271862A1 (en) 2023-11-08
US20230142420A1 (en) 2023-05-11
CN118854432A (zh) 2024-10-29
TWI883302B (zh) 2025-05-11
CN118854432B (zh) 2025-07-18
US20220205129A1 (en) 2022-06-30
KR102939619B1 (ko) 2026-03-16
KR20230124725A (ko) 2023-08-25

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