TWI883302B - 在單晶矽錠成長過程中使用緩衝劑 - Google Patents

在單晶矽錠成長過程中使用緩衝劑 Download PDF

Info

Publication number
TWI883302B
TWI883302B TW110149634A TW110149634A TWI883302B TW I883302 B TWI883302 B TW I883302B TW 110149634 A TW110149634 A TW 110149634A TW 110149634 A TW110149634 A TW 110149634A TW I883302 B TWI883302 B TW I883302B
Authority
TW
Taiwan
Prior art keywords
melt
single crystal
crystal silicon
weir
quartz
Prior art date
Application number
TW110149634A
Other languages
English (en)
Chinese (zh)
Other versions
TW202231942A (zh
Inventor
馬堤歐 潘諾卡加
富蘭斯卡 馬奇斯
詹姆士 何瓦齊
Original Assignee
環球晶圓股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 環球晶圓股份有限公司 filed Critical 環球晶圓股份有限公司
Publication of TW202231942A publication Critical patent/TW202231942A/zh
Application granted granted Critical
Publication of TWI883302B publication Critical patent/TWI883302B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW110149634A 2020-12-31 2021-12-30 在單晶矽錠成長過程中使用緩衝劑 TWI883302B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202063132712P 2020-12-31 2020-12-31
US202063132713P 2020-12-31 2020-12-31
US63/132,712 2020-12-31
US63/132,713 2020-12-31

Publications (2)

Publication Number Publication Date
TW202231942A TW202231942A (zh) 2022-08-16
TWI883302B true TWI883302B (zh) 2025-05-11

Family

ID=80001458

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110149634A TWI883302B (zh) 2020-12-31 2021-12-30 在單晶矽錠成長過程中使用緩衝劑

Country Status (7)

Country Link
US (2) US11767610B2 (enExample)
EP (1) EP4271862B1 (enExample)
JP (1) JP2024501567A (enExample)
KR (1) KR102939619B1 (enExample)
CN (1) CN118854432B (enExample)
TW (1) TWI883302B (enExample)
WO (1) WO2022144387A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4219802A1 (en) * 2020-02-20 2023-08-02 GlobalWafers Co., Ltd. Method for forming a unitized crucible assembly and crucible assembly
US12146236B2 (en) 2021-06-07 2024-11-19 Globalwafers Co., Ltd Use of quartz plates during growth of single crystal silicon ingots
US12410538B2 (en) 2021-11-08 2025-09-09 Globalwafers Co., Ltd. Use of arrays of quartz particles during single crystal silicon ingot production
US20240352616A1 (en) * 2023-04-18 2024-10-24 Globalwafers Co., Ltd. Systems and methods for microvoid analysis in crystals grown by continuous czochralski pullers

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200415265A (en) * 2002-10-31 2004-08-16 Wacker Siltronic Halbleitermat Process for producing a silicon single crystal which is doped with highly volatile foreign substance
CN108138354A (zh) * 2015-05-01 2018-06-08 各星有限公司 生产被挥发性掺杂剂掺杂的单晶锭的方法
TW201835392A (zh) * 2017-01-04 2018-10-01 香港商各星有限公司 包含坩堝及條件作用構件之拉晶系統及方法
CN110741111A (zh) * 2017-05-04 2020-01-31 各星有限公司 包括坩埚和屏障的拉晶系统和方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669298A (en) * 1979-11-13 1981-06-10 Nec Corp Method of growing single crystal of semiconductor
US6663708B1 (en) * 2000-09-22 2003-12-16 Mitsubishi Materials Silicon Corporation Silicon wafer, and manufacturing method and heat treatment method of the same
JP3624827B2 (ja) * 2000-12-20 2005-03-02 三菱住友シリコン株式会社 シリコン単結晶の製造方法
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
JP2006273631A (ja) * 2005-03-28 2006-10-12 Komatsu Electronic Metals Co Ltd シリコン単結晶の製造方法およびアニールウェーハおよびアニールウェーハの製造方法
JP2011054821A (ja) * 2009-09-03 2011-03-17 Sumco Corp エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
WO2016152057A1 (ja) * 2015-03-25 2016-09-29 株式会社トクヤマ 投入装置、塊状シリコン原料の供給方法、シリコン単結晶製造装置およびシリコン単結晶の製造方法
US20180291524A1 (en) * 2015-05-01 2018-10-11 Corner Star Limited Methods for producing single crystal ingots doped with volatile dopants

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200415265A (en) * 2002-10-31 2004-08-16 Wacker Siltronic Halbleitermat Process for producing a silicon single crystal which is doped with highly volatile foreign substance
CN108138354A (zh) * 2015-05-01 2018-06-08 各星有限公司 生产被挥发性掺杂剂掺杂的单晶锭的方法
TW201835392A (zh) * 2017-01-04 2018-10-01 香港商各星有限公司 包含坩堝及條件作用構件之拉晶系統及方法
CN110741111A (zh) * 2017-05-04 2020-01-31 各星有限公司 包括坩埚和屏障的拉晶系统和方法

Also Published As

Publication number Publication date
EP4271862B1 (en) 2025-08-20
US12091769B2 (en) 2024-09-17
US11767610B2 (en) 2023-09-26
TW202231942A (zh) 2022-08-16
WO2022144387A1 (en) 2022-07-07
EP4271862A1 (en) 2023-11-08
US20230142420A1 (en) 2023-05-11
CN118854432A (zh) 2024-10-29
JP2024501567A (ja) 2024-01-12
CN118854432B (zh) 2025-07-18
US20220205129A1 (en) 2022-06-30
KR102939619B1 (ko) 2026-03-16
KR20230124725A (ko) 2023-08-25

Similar Documents

Publication Publication Date Title
TWI883302B (zh) 在單晶矽錠成長過程中使用緩衝劑
EP0170856B1 (en) Process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
CN103635613B (zh) 通过仅掺杂初始装料而生长均匀掺杂硅锭
JP2001520168A (ja) ポリシリコン装填物からシリコンメルトを製造する方法
TWI912531B (zh) 石英板於單晶矽錠生長期間之用途
CN116783333B (zh) 用于以连续直拉法生长单晶硅锭的方法
EP4534739A2 (en) Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control
EP4430234B1 (en) Use of arrays of quartz particles during single crystal silicon ingot production
US12037698B2 (en) Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube
US11866845B2 (en) Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control