KR102939619B1 - 단결정 실리콘 잉곳들의 성장 중의 버퍼 부재들의 사용 - Google Patents

단결정 실리콘 잉곳들의 성장 중의 버퍼 부재들의 사용

Info

Publication number
KR102939619B1
KR102939619B1 KR1020237025636A KR20237025636A KR102939619B1 KR 102939619 B1 KR102939619 B1 KR 102939619B1 KR 1020237025636 A KR1020237025636 A KR 1020237025636A KR 20237025636 A KR20237025636 A KR 20237025636A KR 102939619 B1 KR102939619 B1 KR 102939619B1
Authority
KR
South Korea
Prior art keywords
melt
crystal silicon
dike
ingot
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237025636A
Other languages
English (en)
Korean (ko)
Other versions
KR20230124725A (ko
Inventor
마테오 파노치아
프란체스카 마르케세
제임스 호와이 킷
Original Assignee
글로벌웨이퍼스 씨오., 엘티디.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 글로벌웨이퍼스 씨오., 엘티디. filed Critical 글로벌웨이퍼스 씨오., 엘티디.
Publication of KR20230124725A publication Critical patent/KR20230124725A/ko
Application granted granted Critical
Publication of KR102939619B1 publication Critical patent/KR102939619B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020237025636A 2020-12-31 2021-12-29 단결정 실리콘 잉곳들의 성장 중의 버퍼 부재들의 사용 Active KR102939619B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063132712P 2020-12-31 2020-12-31
US202063132713P 2020-12-31 2020-12-31
US63/132,712 2020-12-31
US63/132,713 2020-12-31
PCT/EP2021/087786 WO2022144387A1 (en) 2020-12-31 2021-12-29 Use of buffer members during growth of single crystal silicon ingots

Publications (2)

Publication Number Publication Date
KR20230124725A KR20230124725A (ko) 2023-08-25
KR102939619B1 true KR102939619B1 (ko) 2026-03-16

Family

ID=80001458

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237025636A Active KR102939619B1 (ko) 2020-12-31 2021-12-29 단결정 실리콘 잉곳들의 성장 중의 버퍼 부재들의 사용

Country Status (7)

Country Link
US (2) US11767610B2 (enExample)
EP (1) EP4271862B1 (enExample)
JP (1) JP2024501567A (enExample)
KR (1) KR102939619B1 (enExample)
CN (1) CN118854432B (enExample)
TW (1) TWI883302B (enExample)
WO (1) WO2022144387A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4219802A1 (en) * 2020-02-20 2023-08-02 GlobalWafers Co., Ltd. Method for forming a unitized crucible assembly and crucible assembly
US12146236B2 (en) 2021-06-07 2024-11-19 Globalwafers Co., Ltd Use of quartz plates during growth of single crystal silicon ingots
US12410538B2 (en) 2021-11-08 2025-09-09 Globalwafers Co., Ltd. Use of arrays of quartz particles during single crystal silicon ingot production
US20240352616A1 (en) * 2023-04-18 2024-10-24 Globalwafers Co., Ltd. Systems and methods for microvoid analysis in crystals grown by continuous czochralski pullers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090061140A1 (en) * 2005-03-28 2009-03-05 Sumco Techxiv Kabushiki Kaisha Silicon Single Crystal Producing Method, Annealed Wafer, and Method of Producing Annealed Wafer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669298A (en) * 1979-11-13 1981-06-10 Nec Corp Method of growing single crystal of semiconductor
US6663708B1 (en) * 2000-09-22 2003-12-16 Mitsubishi Materials Silicon Corporation Silicon wafer, and manufacturing method and heat treatment method of the same
JP3624827B2 (ja) * 2000-12-20 2005-03-02 三菱住友シリコン株式会社 シリコン単結晶の製造方法
DE10250822B4 (de) * 2002-10-31 2006-09-28 Siltronic Ag Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
JP2011054821A (ja) * 2009-09-03 2011-03-17 Sumco Corp エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
WO2016152057A1 (ja) * 2015-03-25 2016-09-29 株式会社トクヤマ 投入装置、塊状シリコン原料の供給方法、シリコン単結晶製造装置およびシリコン単結晶の製造方法
US20180291524A1 (en) * 2015-05-01 2018-10-11 Corner Star Limited Methods for producing single crystal ingots doped with volatile dopants
WO2016179022A1 (en) * 2015-05-01 2016-11-10 Sunedison, Inc. Methods for producing single crystal ingots doped with volatile dopants
US10221500B2 (en) * 2017-01-04 2019-03-05 Corner Star Limited System for forming an ingot including crucible and conditioning members
US10407797B2 (en) 2017-05-04 2019-09-10 Corner Start Limited Crystal pulling system and method including crucible and barrier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090061140A1 (en) * 2005-03-28 2009-03-05 Sumco Techxiv Kabushiki Kaisha Silicon Single Crystal Producing Method, Annealed Wafer, and Method of Producing Annealed Wafer

Also Published As

Publication number Publication date
EP4271862B1 (en) 2025-08-20
US12091769B2 (en) 2024-09-17
US11767610B2 (en) 2023-09-26
TW202231942A (zh) 2022-08-16
WO2022144387A1 (en) 2022-07-07
EP4271862A1 (en) 2023-11-08
US20230142420A1 (en) 2023-05-11
CN118854432A (zh) 2024-10-29
TWI883302B (zh) 2025-05-11
JP2024501567A (ja) 2024-01-12
CN118854432B (zh) 2025-07-18
US20220205129A1 (en) 2022-06-30
KR20230124725A (ko) 2023-08-25

Similar Documents

Publication Publication Date Title
KR102939619B1 (ko) 단결정 실리콘 잉곳들의 성장 중의 버퍼 부재들의 사용
EP0170856B1 (en) Process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
KR102658843B1 (ko) 연속 쵸크랄스키 방법을 사용하여 질소 도핑된 단결정 실리콘 잉곳을 성장시키기 위한 방법들 및 이 방법에 의해 성장되는 단결정 실리콘 잉곳
US8840721B2 (en) Method of manufacturing silicon single crystal
CN113272479B (zh) 控制硅熔融物中的掺杂剂浓度以增强铸锭质量
JP7826309B2 (ja) 坩堝の腐食を低減させた単結晶シリコンインゴットを形成する方法
EP4352283B1 (en) Use of quartz plates during growth of single crystal silicon ingots
CN116783333B (zh) 用于以连续直拉法生长单晶硅锭的方法
TW202328509A (zh) 用於涉及矽進料管之惰性氣體控制之單晶矽錠生長之方法
JP2011057460A (ja) シリコン単結晶の育成方法
JP7359241B2 (ja) シリコン単結晶の製造方法
EP4430234B1 (en) Use of arrays of quartz particles during single crystal silicon ingot production

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13 Application amended

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

U12 Designation fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U12-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)