CN118854432B - 用于以连续直拉法生长单晶硅锭的方法 - Google Patents

用于以连续直拉法生长单晶硅锭的方法

Info

Publication number
CN118854432B
CN118854432B CN202410933960.7A CN202410933960A CN118854432B CN 118854432 B CN118854432 B CN 118854432B CN 202410933960 A CN202410933960 A CN 202410933960A CN 118854432 B CN118854432 B CN 118854432B
Authority
CN
China
Prior art keywords
melt
ingot
single crystal
weir
crystal silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202410933960.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN118854432A (zh
Inventor
M·潘诺基亚
F·马尔凯塞
J·霍外基特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
Original Assignee
GlobalWafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GlobalWafers Co Ltd filed Critical GlobalWafers Co Ltd
Priority claimed from CN202180092003.0A external-priority patent/CN116783333B/zh
Publication of CN118854432A publication Critical patent/CN118854432A/zh
Application granted granted Critical
Publication of CN118854432B publication Critical patent/CN118854432B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202410933960.7A 2020-12-31 2021-12-29 用于以连续直拉法生长单晶硅锭的方法 Active CN118854432B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US202063132712P 2020-12-31 2020-12-31
US202063132713P 2020-12-31 2020-12-31
US63/132,712 2020-12-31
US63/132,713 2020-12-31
CN202180092003.0A CN116783333B (zh) 2020-12-31 2021-12-29 用于以连续直拉法生长单晶硅锭的方法
PCT/EP2021/087786 WO2022144387A1 (en) 2020-12-31 2021-12-29 Use of buffer members during growth of single crystal silicon ingots

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN202180092003.0A Division CN116783333B (zh) 2020-12-31 2021-12-29 用于以连续直拉法生长单晶硅锭的方法

Publications (2)

Publication Number Publication Date
CN118854432A CN118854432A (zh) 2024-10-29
CN118854432B true CN118854432B (zh) 2025-07-18

Family

ID=80001458

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202410933960.7A Active CN118854432B (zh) 2020-12-31 2021-12-29 用于以连续直拉法生长单晶硅锭的方法

Country Status (7)

Country Link
US (2) US11767610B2 (enExample)
EP (1) EP4271862B1 (enExample)
JP (1) JP2024501567A (enExample)
KR (1) KR102939619B1 (enExample)
CN (1) CN118854432B (enExample)
TW (1) TWI883302B (enExample)
WO (1) WO2022144387A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4219802A1 (en) * 2020-02-20 2023-08-02 GlobalWafers Co., Ltd. Method for forming a unitized crucible assembly and crucible assembly
US12146236B2 (en) 2021-06-07 2024-11-19 Globalwafers Co., Ltd Use of quartz plates during growth of single crystal silicon ingots
US12410538B2 (en) 2021-11-08 2025-09-09 Globalwafers Co., Ltd. Use of arrays of quartz particles during single crystal silicon ingot production
US20240352616A1 (en) * 2023-04-18 2024-10-24 Globalwafers Co., Ltd. Systems and methods for microvoid analysis in crystals grown by continuous czochralski pullers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669298A (en) * 1979-11-13 1981-06-10 Nec Corp Method of growing single crystal of semiconductor
US6663708B1 (en) * 2000-09-22 2003-12-16 Mitsubishi Materials Silicon Corporation Silicon wafer, and manufacturing method and heat treatment method of the same
JP3624827B2 (ja) * 2000-12-20 2005-03-02 三菱住友シリコン株式会社 シリコン単結晶の製造方法
DE10250822B4 (de) * 2002-10-31 2006-09-28 Siltronic Ag Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
JP2006273631A (ja) * 2005-03-28 2006-10-12 Komatsu Electronic Metals Co Ltd シリコン単結晶の製造方法およびアニールウェーハおよびアニールウェーハの製造方法
JP2011054821A (ja) * 2009-09-03 2011-03-17 Sumco Corp エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
WO2016152057A1 (ja) * 2015-03-25 2016-09-29 株式会社トクヤマ 投入装置、塊状シリコン原料の供給方法、シリコン単結晶製造装置およびシリコン単結晶の製造方法
US20180291524A1 (en) * 2015-05-01 2018-10-11 Corner Star Limited Methods for producing single crystal ingots doped with volatile dopants
WO2016179022A1 (en) * 2015-05-01 2016-11-10 Sunedison, Inc. Methods for producing single crystal ingots doped with volatile dopants
US10221500B2 (en) * 2017-01-04 2019-03-05 Corner Star Limited System for forming an ingot including crucible and conditioning members
US10407797B2 (en) 2017-05-04 2019-09-10 Corner Start Limited Crystal pulling system and method including crucible and barrier

Also Published As

Publication number Publication date
EP4271862B1 (en) 2025-08-20
US12091769B2 (en) 2024-09-17
US11767610B2 (en) 2023-09-26
TW202231942A (zh) 2022-08-16
WO2022144387A1 (en) 2022-07-07
EP4271862A1 (en) 2023-11-08
US20230142420A1 (en) 2023-05-11
CN118854432A (zh) 2024-10-29
TWI883302B (zh) 2025-05-11
JP2024501567A (ja) 2024-01-12
US20220205129A1 (en) 2022-06-30
KR102939619B1 (ko) 2026-03-16
KR20230124725A (ko) 2023-08-25

Similar Documents

Publication Publication Date Title
CN118854432B (zh) 用于以连续直拉法生长单晶硅锭的方法
EP0170856B1 (en) Process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
JP2001520168A (ja) ポリシリコン装填物からシリコンメルトを製造する方法
US12146236B2 (en) Use of quartz plates during growth of single crystal silicon ingots
CN116783333B (zh) 用于以连续直拉法生长单晶硅锭的方法
EP4534739A2 (en) Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control
US20230078325A1 (en) Crystal pulling systems having composite polycrystalline silicon feed tubes, methods for preparing such tubes, and methods for forming a single crystal silicon ingot
JP7052912B1 (ja) 単結晶引上げ装置
US12037698B2 (en) Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube
US11866845B2 (en) Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control
EP4430234B1 (en) Use of arrays of quartz particles during single crystal silicon ingot production

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant