JP2024089587A5 - - Google Patents

Info

Publication number
JP2024089587A5
JP2024089587A5 JP2023017340A JP2023017340A JP2024089587A5 JP 2024089587 A5 JP2024089587 A5 JP 2024089587A5 JP 2023017340 A JP2023017340 A JP 2023017340A JP 2023017340 A JP2023017340 A JP 2023017340A JP 2024089587 A5 JP2024089587 A5 JP 2024089587A5
Authority
JP
Japan
Prior art keywords
receiving element
semiconductor light
layer
element according
band gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023017340A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024089587A (ja
Filing date
Publication date
Application filed filed Critical
Priority to US18/127,423 priority Critical patent/US12477839B2/en
Publication of JP2024089587A publication Critical patent/JP2024089587A/ja
Publication of JP2024089587A5 publication Critical patent/JP2024089587A5/ja
Pending legal-status Critical Current

Links

JP2023017340A 2022-12-21 2023-02-08 半導体受光素子 Pending JP2024089587A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US18/127,423 US12477839B2 (en) 2022-12-21 2023-03-28 Semiconductor photodetector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022204354 2022-12-21
JP2022204354 2022-12-21

Publications (2)

Publication Number Publication Date
JP2024089587A JP2024089587A (ja) 2024-07-03
JP2024089587A5 true JP2024089587A5 (https=) 2026-01-29

Family

ID=91690040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023017340A Pending JP2024089587A (ja) 2022-12-21 2023-02-08 半導体受光素子

Country Status (1)

Country Link
JP (1) JP2024089587A (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126258A (ja) * 1989-10-12 1991-05-29 Mitsubishi Electric Corp 受信用光電子集積回路
JP3162463B2 (ja) * 1992-03-17 2001-04-25 光計測技術開発株式会社 半導体素子およびその製造方法
US7030032B2 (en) * 2003-05-13 2006-04-18 Raytheon Company Photodiode passivation technique
JP5612347B2 (ja) * 2010-03-31 2014-10-22 旭化成エレクトロニクス株式会社 化合物半導体素子の製造方法
JP5503380B2 (ja) * 2010-03-31 2014-05-28 旭化成エレクトロニクス株式会社 赤外線センサ
JP2012209319A (ja) * 2011-03-29 2012-10-25 Ntt Electornics Corp 半導体素子及び半導体素子製造方法

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