JP2024089587A - 半導体受光素子 - Google Patents

半導体受光素子 Download PDF

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Publication number
JP2024089587A
JP2024089587A JP2023017340A JP2023017340A JP2024089587A JP 2024089587 A JP2024089587 A JP 2024089587A JP 2023017340 A JP2023017340 A JP 2023017340A JP 2023017340 A JP2023017340 A JP 2023017340A JP 2024089587 A JP2024089587 A JP 2024089587A
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Japan
Prior art keywords
receiving element
semiconductor light
light receiving
layer
band gap
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Pending
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JP2023017340A
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Japanese (ja)
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JP2024089587A5 (https=
Inventor
隆司 豊中
Takashi Toyonaka
博 濱田
Hiroshi Hamada
隆 鷲野
Takashi Washino
重剛 浜田
Shigetaka Hamada
豪 加藤
Takeshi Kato
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Lumentum Operations LLC
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Lumentum Operations LLC
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Publication date
Application filed by Lumentum Operations LLC filed Critical Lumentum Operations LLC
Priority to US18/127,423 priority Critical patent/US12477839B2/en
Publication of JP2024089587A publication Critical patent/JP2024089587A/ja
Publication of JP2024089587A5 publication Critical patent/JP2024089587A5/ja
Pending legal-status Critical Current

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JP2023017340A 2022-12-21 2023-02-08 半導体受光素子 Pending JP2024089587A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US18/127,423 US12477839B2 (en) 2022-12-21 2023-03-28 Semiconductor photodetector

Applications Claiming Priority (2)

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JP2022204354 2022-12-21
JP2022204354 2022-12-21

Publications (2)

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JP2024089587A true JP2024089587A (ja) 2024-07-03
JP2024089587A5 JP2024089587A5 (https=) 2026-01-29

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ID=91690040

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JP2023017340A Pending JP2024089587A (ja) 2022-12-21 2023-02-08 半導体受光素子

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126258A (ja) * 1989-10-12 1991-05-29 Mitsubishi Electric Corp 受信用光電子集積回路
JPH05267271A (ja) * 1992-03-17 1993-10-15 Hikari Keisoku Gijutsu Kaihatsu Kk 半導体素子およびその製造方法
JP2006528844A (ja) * 2003-05-13 2006-12-21 レイセオン・カンパニー フォトダイオード不動態化技術
JP2011215046A (ja) * 2010-03-31 2011-10-27 Asahi Kasei Electronics Co Ltd 赤外線センサ
JP2011216625A (ja) * 2010-03-31 2011-10-27 Asahi Kasei Electronics Co Ltd 化合物半導体素子、および、その製造方法
JP2012209319A (ja) * 2011-03-29 2012-10-25 Ntt Electornics Corp 半導体素子及び半導体素子製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126258A (ja) * 1989-10-12 1991-05-29 Mitsubishi Electric Corp 受信用光電子集積回路
JPH05267271A (ja) * 1992-03-17 1993-10-15 Hikari Keisoku Gijutsu Kaihatsu Kk 半導体素子およびその製造方法
JP2006528844A (ja) * 2003-05-13 2006-12-21 レイセオン・カンパニー フォトダイオード不動態化技術
JP2011215046A (ja) * 2010-03-31 2011-10-27 Asahi Kasei Electronics Co Ltd 赤外線センサ
JP2011216625A (ja) * 2010-03-31 2011-10-27 Asahi Kasei Electronics Co Ltd 化合物半導体素子、および、その製造方法
JP2012209319A (ja) * 2011-03-29 2012-10-25 Ntt Electornics Corp 半導体素子及び半導体素子製造方法

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