JP2024014982A5 - - Google Patents
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- JP2024014982A5 JP2024014982A5 JP2023196636A JP2023196636A JP2024014982A5 JP 2024014982 A5 JP2024014982 A5 JP 2024014982A5 JP 2023196636 A JP2023196636 A JP 2023196636A JP 2023196636 A JP2023196636 A JP 2023196636A JP 2024014982 A5 JP2024014982 A5 JP 2024014982A5
- Authority
- JP
- Japan
- Prior art keywords
- sic
- substrate
- axis
- orientation
- crystal structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000758 substrate Substances 0.000 claims 46
- 239000013078 crystal Substances 0.000 claims 41
- 238000003776 cleavage reaction Methods 0.000 claims 15
- 230000007017 scission Effects 0.000 claims 15
- 238000000034 method Methods 0.000 claims 14
- 239000011265 semifinished product Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000005259 measurement Methods 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000003754 machining Methods 0.000 claims 2
- 238000005520 cutting process Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP20186879 | 2020-07-21 | ||
| EP20186879.1A EP3943645A1 (en) | 2020-07-21 | 2020-07-21 | Sic crystalline substrates with an optimal orientation of lattice planes for fissure reduction and method of producing same |
| JP2021115838A JP2022028610A (ja) | 2020-07-21 | 2021-07-13 | 亀裂低減に最適な格子面配向を持つＳｉＣ結晶基板およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021115838A Division JP2022028610A (ja) | 2020-07-21 | 2021-07-13 | 亀裂低減に最適な格子面配向を持つＳｉＣ結晶基板およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024014982A JP2024014982A (ja) | 2024-02-01 |
| JP2024014982A5 true JP2024014982A5 (enExample) | 2024-04-03 |
Family
ID=71738037
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021115838A Pending JP2022028610A (ja) | 2020-07-21 | 2021-07-13 | 亀裂低減に最適な格子面配向を持つＳｉＣ結晶基板およびその製造方法 |
| JP2023196636A Pending JP2024014982A (ja) | 2020-07-21 | 2023-11-20 | 亀裂低減に最適な格子面配向を持つＳｉＣ結晶基板およびその製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021115838A Pending JP2022028610A (ja) | 2020-07-21 | 2021-07-13 | 亀裂低減に最適な格子面配向を持つＳｉＣ結晶基板およびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20220025545A1 (enExample) |
| EP (1) | EP3943645A1 (enExample) |
| JP (2) | JP2022028610A (enExample) |
| KR (2) | KR20220011602A (enExample) |
| CN (1) | CN113957532B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3567139B1 (en) * | 2018-05-11 | 2021-04-07 | SiCrystal GmbH | Chamfered silicon carbide substrate and method of chamfering |
| US12393115B2 (en) * | 2018-09-05 | 2025-08-19 | Merck Patent Gmbh | Positive working photosensitive material |
| EP3943644A1 (en) * | 2020-07-21 | 2022-01-26 | SiCrystal GmbH | Sic crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same |
| EP3943645A1 (en) * | 2020-07-21 | 2022-01-26 | SiCrystal GmbH | Sic crystalline substrates with an optimal orientation of lattice planes for fissure reduction and method of producing same |
| JP7435880B2 (ja) * | 2023-03-09 | 2024-02-21 | 株式会社レゾナック | ｎ型ＳｉＣ単結晶基板及びＳｉＣエピタキシャルウェハ |
| CN120772693B (zh) * | 2025-09-10 | 2025-12-16 | 山西烁科晶体有限公司 | 一种边缘高应力硬脆半导体材料的加工方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2882355B2 (ja) * | 1996-04-10 | 1999-04-12 | 住友電気工業株式会社 | Ｉｉｉ −ｖ族化合物半導体ウエハ及びその製造方法 |
| US6869480B1 (en) * | 2002-07-17 | 2005-03-22 | The United States Of America As Represented By The United States National Aeronautics And Space Administration | Method for the production of nanometer scale step height reference specimens |
| JP2007182330A (ja) * | 2004-08-24 | 2007-07-19 | Bridgestone Corp | 炭化ケイ素単結晶ウェハ及びその製造方法 |
| DE102009048868B4 (de) | 2009-10-09 | 2013-01-03 | Sicrystal Ag | Herstellungsverfahren für einen SiC-Volumeneinkristall mittels einer thermischen Behandlung und niederohmiges einkristallines SiC-Substrat |
| JP5540349B2 (ja) * | 2009-12-02 | 2014-07-02 | 学校法人関西学院 | 半導体ウエハの製造方法 |
| DE102010029756B4 (de) | 2010-06-07 | 2023-09-21 | Sicrystal Gmbh | Herstellungsverfahren für einen SiC-Volumeneinkristall mit großer Facette und einkristallines SiC-Substrat mit homogener Widerstandsverteilung |
| JP2013049609A (ja) * | 2011-08-31 | 2013-03-14 | Rohm Co Ltd | ＳｉＣエピタキシャルウエハおよびそれを用いたＳｉＣ半導体素子 |
| JP6080075B2 (ja) * | 2013-06-13 | 2017-02-15 | 学校法人関西学院 | ＳｉＣ基板の表面処理方法 |
| DE112016004600B4 (de) * | 2015-10-07 | 2025-10-23 | Sumitomo Electric Industries, Ltd. | Epitaktisches Siliziumkarbidsubstrat, Verwendung des Siliziumkarbidsubstrats und Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung |
| JP2017105697A (ja) * | 2015-11-26 | 2017-06-15 | 東洋炭素株式会社 | 薄型のＳｉＣウエハの製造方法及び薄型のＳｉＣウエハ |
| JP6597381B2 (ja) * | 2016-02-22 | 2019-10-30 | 住友電気工業株式会社 | 炭化珪素基板の製造方法、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法 |
| JP6824829B2 (ja) * | 2017-06-15 | 2021-02-03 | 株式会社サイオクス | 窒化物半導体積層物の製造方法、窒化物半導体自立基板の製造方法および半導体装置の製造方法 |
| WO2020115950A1 (ja) * | 2018-12-05 | 2020-06-11 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板の製造方法 |
| CN110067020A (zh) | 2019-04-26 | 2019-07-30 | 河北同光晶体有限公司 | 一种低应力SiC单晶的制备装置 |
| EP3943645A1 (en) * | 2020-07-21 | 2022-01-26 | SiCrystal GmbH | Sic crystalline substrates with an optimal orientation of lattice planes for fissure reduction and method of producing same |
-
2020
- 2020-07-21 EP EP20186879.1A patent/EP3943645A1/en active Pending
-
2021
- 2021-07-13 JP JP2021115838A patent/JP2022028610A/ja active Pending
- 2021-07-20 US US17/380,607 patent/US20220025545A1/en active Pending
- 2021-07-21 CN CN202110826438.5A patent/CN113957532B/zh active Active
- 2021-07-21 KR KR1020210096056A patent/KR20220011602A/ko not_active Ceased
-
2023
- 2023-11-20 JP JP2023196636A patent/JP2024014982A/ja active Pending
-
2025
- 2025-01-21 KR KR1020250008828A patent/KR20250016416A/ko active Pending
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