JP2022028610A - 亀裂低減に最適な格子面配向を持つＳｉＣ結晶基板およびその製造方法 - Google Patents

亀裂低減に最適な格子面配向を持つＳｉＣ結晶基板およびその製造方法 Download PDF

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Publication number
JP2022028610A
JP2022028610A JP2021115838A JP2021115838A JP2022028610A JP 2022028610 A JP2022028610 A JP 2022028610A JP 2021115838 A JP2021115838 A JP 2021115838A JP 2021115838 A JP2021115838 A JP 2021115838A JP 2022028610 A JP2022028610 A JP 2022028610A
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Prior art keywords
sic
substrate
orientation
axis
predetermined
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JP2021115838A
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English (en)
Japanese (ja)
Inventor
フォーゲル ミヒャエル
Michael Vogel
シュミット エルヴィン
Erwin Schmit
ウェーバー アルント‐ディートリヒ
Weber Arnd-Dietrich
バルツ ラルフ‐ウーヴェ
Barz Ralph-Uwe
バンスパッハ ドミニク
Bannspach Dominik
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Sicrystal GmbH
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Sicrystal GmbH
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Publication of JP2022028610A publication Critical patent/JP2022028610A/ja
Priority to JP2023196636A priority Critical patent/JP2024014982A/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B5/00—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
    • B24B5/50—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground, e.g. strings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H10P90/14—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2021115838A 2020-07-21 2021-07-13 亀裂低減に最適な格子面配向を持つＳｉＣ結晶基板およびその製造方法 Pending JP2022028610A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023196636A JP2024014982A (ja) 2020-07-21 2023-11-20 亀裂低減に最適な格子面配向を持つＳｉＣ結晶基板およびその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP20186879 2020-07-21
EP20186879.1A EP3943645A1 (en) 2020-07-21 2020-07-21 Sic crystalline substrates with an optimal orientation of lattice planes for fissure reduction and method of producing same

Related Child Applications (1)

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JP2023196636A Division JP2024014982A (ja) 2020-07-21 2023-11-20 亀裂低減に最適な格子面配向を持つＳｉＣ結晶基板およびその製造方法

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JP2022028610A true JP2022028610A (ja) 2022-02-16

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JP2021115838A Pending JP2022028610A (ja) 2020-07-21 2021-07-13 亀裂低減に最適な格子面配向を持つＳｉＣ結晶基板およびその製造方法
JP2023196636A Pending JP2024014982A (ja) 2020-07-21 2023-11-20 亀裂低減に最適な格子面配向を持つＳｉＣ結晶基板およびその製造方法

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US (1) US20220025545A1 (enExample)
EP (1) EP3943645A1 (enExample)
JP (2) JP2022028610A (enExample)
KR (2) KR20220011602A (enExample)
CN (1) CN113957532B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024014982A (ja) * 2020-07-21 2024-02-01 サイクリスタル ゲーエムベーハー 亀裂低減に最適な格子面配向を持つＳｉＣ結晶基板およびその製造方法
JP2024036652A (ja) * 2023-03-09 2024-03-15 株式会社レゾナック ｎ型ＳｉＣ単結晶基板、ＳｉＣエピタキシャルウェハ及びｎ型ＳｉＣ単結晶インゴット

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3567139B1 (en) * 2018-05-11 2021-04-07 SiCrystal GmbH Chamfered silicon carbide substrate and method of chamfering
US12393115B2 (en) * 2018-09-05 2025-08-19 Merck Patent Gmbh Positive working photosensitive material
EP3943644A1 (en) * 2020-07-21 2022-01-26 SiCrystal GmbH Sic crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same
CN120772693B (zh) * 2025-09-10 2025-12-16 山西烁科晶体有限公司 一种边缘高应力硬脆半导体材料的加工方法

Citations (5)

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WO2006022282A1 (ja) * 2004-08-24 2006-03-02 Bridgestone Corporation 炭化ケイ素単結晶ウェハ及びその製造方法
JP2011119412A (ja) * 2009-12-02 2011-06-16 Kwansei Gakuin 半導体ウエハの製造方法
JP2013049609A (ja) * 2011-08-31 2013-03-14 Rohm Co Ltd ＳｉＣエピタキシャルウエハおよびそれを用いたＳｉＣ半導体素子
JP2015002218A (ja) * 2013-06-13 2015-01-05 学校法人関西学院 ＳｉＣ基板の表面処理方法
JP2017152423A (ja) * 2016-02-22 2017-08-31 住友電気工業株式会社 炭化珪素基板の製造方法、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法

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JP2882355B2 (ja) * 1996-04-10 1999-04-12 住友電気工業株式会社 Ｉｉｉ −ｖ族化合物半導体ウエハ及びその製造方法
US6869480B1 (en) * 2002-07-17 2005-03-22 The United States Of America As Represented By The United States National Aeronautics And Space Administration Method for the production of nanometer scale step height reference specimens
DE102009048868B4 (de) 2009-10-09 2013-01-03 Sicrystal Ag Herstellungsverfahren für einen SiC-Volumeneinkristall mittels einer thermischen Behandlung und niederohmiges einkristallines SiC-Substrat
DE102010029756B4 (de) 2010-06-07 2023-09-21 Sicrystal Gmbh Herstellungsverfahren für einen SiC-Volumeneinkristall mit großer Facette und einkristallines SiC-Substrat mit homogener Widerstandsverteilung
DE112016004600B4 (de) * 2015-10-07 2025-10-23 Sumitomo Electric Industries, Ltd. Epitaktisches Siliziumkarbidsubstrat, Verwendung des Siliziumkarbidsubstrats und Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung
JP2017105697A (ja) * 2015-11-26 2017-06-15 東洋炭素株式会社 薄型のＳｉＣウエハの製造方法及び薄型のＳｉＣウエハ
JP6824829B2 (ja) * 2017-06-15 2021-02-03 株式会社サイオクス 窒化物半導体積層物の製造方法、窒化物半導体自立基板の製造方法および半導体装置の製造方法
WO2020115950A1 (ja) * 2018-12-05 2020-06-11 住友電気工業株式会社 炭化珪素エピタキシャル基板の製造方法
CN110067020A (zh) 2019-04-26 2019-07-30 河北同光晶体有限公司 一种低应力SiC单晶的制备装置
EP3943645A1 (en) * 2020-07-21 2022-01-26 SiCrystal GmbH Sic crystalline substrates with an optimal orientation of lattice planes for fissure reduction and method of producing same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006022282A1 (ja) * 2004-08-24 2006-03-02 Bridgestone Corporation 炭化ケイ素単結晶ウェハ及びその製造方法
JP2011119412A (ja) * 2009-12-02 2011-06-16 Kwansei Gakuin 半導体ウエハの製造方法
JP2013049609A (ja) * 2011-08-31 2013-03-14 Rohm Co Ltd ＳｉＣエピタキシャルウエハおよびそれを用いたＳｉＣ半導体素子
JP2015002218A (ja) * 2013-06-13 2015-01-05 学校法人関西学院 ＳｉＣ基板の表面処理方法
JP2017152423A (ja) * 2016-02-22 2017-08-31 住友電気工業株式会社 炭化珪素基板の製造方法、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024014982A (ja) * 2020-07-21 2024-02-01 サイクリスタル ゲーエムベーハー 亀裂低減に最適な格子面配向を持つＳｉＣ結晶基板およびその製造方法
JP2024036652A (ja) * 2023-03-09 2024-03-15 株式会社レゾナック ｎ型ＳｉＣ単結晶基板、ＳｉＣエピタキシャルウェハ及びｎ型ＳｉＣ単結晶インゴット
JP7601272B2 (ja) 2023-03-09 2024-12-17 株式会社レゾナック ｎ型ＳｉＣ単結晶基板、ＳｉＣエピタキシャルウェハ及びｎ型ＳｉＣ単結晶インゴット
JP2025023296A (ja) * 2023-03-09 2025-02-14 株式会社レゾナック ｎ型ＳｉＣ単結晶基板及びＳｉＣエピタキシャルウェハ
JP7800632B2 (ja) 2023-03-09 2026-01-16 株式会社レゾナック ｎ型ＳｉＣ単結晶基板及びＳｉＣエピタキシャルウェハ

Also Published As

Publication number Publication date
EP3943645A1 (en) 2022-01-26
KR20250016416A (ko) 2025-02-03
US20220025545A1 (en) 2022-01-27
KR20220011602A (ko) 2022-01-28
CN113957532A (zh) 2022-01-21
CN113957532B (zh) 2025-07-15
JP2024014982A (ja) 2024-02-01

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