JP2023549608A5 - - Google Patents
Info
- Publication number
- JP2023549608A5 JP2023549608A5 JP2023528544A JP2023528544A JP2023549608A5 JP 2023549608 A5 JP2023549608 A5 JP 2023549608A5 JP 2023528544 A JP2023528544 A JP 2023528544A JP 2023528544 A JP2023528544 A JP 2023528544A JP 2023549608 A5 JP2023549608 A5 JP 2023549608A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- patterning layer
- layer
- patterning
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025204442A JP2026035712A (ja) | 2020-11-13 | 2025-11-26 | 極紫外線（ｅｕｖ）レジストパターニング現像のための方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/097,921 US11079682B1 (en) | 2020-11-13 | 2020-11-13 | Methods for extreme ultraviolet (EUV) resist patterning development |
| US17/097,921 | 2020-11-13 | ||
| PCT/US2021/058963 WO2022103949A1 (en) | 2020-11-13 | 2021-11-11 | Methods for extreme ultraviolet (euv) resist patterning development |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025204442A Division JP2026035712A (ja) | 2020-11-13 | 2025-11-26 | 極紫外線（ｅｕｖ）レジストパターニング現像のための方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023549608A JP2023549608A (ja) | 2023-11-28 |
| JP2023549608A5 true JP2023549608A5 (cg-RX-API-DMAC7.html) | 2024-10-31 |
| JP7812041B2 JP7812041B2 (ja) | 2026-02-09 |
Family
ID=77063598
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023528544A Active JP7812041B2 (ja) | 2020-11-13 | 2021-11-11 | 極紫外線（ｅｕｖ）レジストパターニング現像のための方法 |
| JP2025204442A Pending JP2026035712A (ja) | 2020-11-13 | 2025-11-26 | 極紫外線（ｅｕｖ）レジストパターニング現像のための方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025204442A Pending JP2026035712A (ja) | 2020-11-13 | 2025-11-26 | 極紫外線（ｅｕｖ）レジストパターニング現像のための方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11079682B1 (cg-RX-API-DMAC7.html) |
| JP (2) | JP7812041B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR20230101906A (cg-RX-API-DMAC7.html) |
| CN (1) | CN116830243A (cg-RX-API-DMAC7.html) |
| TW (1) | TW202234140A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2022103949A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12211691B2 (en) | 2018-12-20 | 2025-01-28 | Lam Research Corporation | Dry development of resists |
| TWI837391B (zh) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| EP3990983A4 (en) | 2019-06-28 | 2023-07-26 | Lam Research Corporation | BAKING STRATEGIES TO INCREASE THE LITHOGRAPHIC PERFORMANCE OF A METAL CONTAINING RESIST |
| CN115362414A (zh) | 2020-04-03 | 2022-11-18 | 朗姆研究公司 | 用于增强euv光刻性能的暴露前光致抗蚀剂固化 |
| CN115702475A (zh) | 2020-06-22 | 2023-02-14 | 朗姆研究公司 | 用于含金属光致抗蚀剂沉积的表面改性 |
| EP4078292A4 (en) | 2020-07-07 | 2023-11-22 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| US11079682B1 (en) * | 2020-11-13 | 2021-08-03 | Tokyo Electron Limited | Methods for extreme ultraviolet (EUV) resist patterning development |
| US20230107357A1 (en) | 2020-11-13 | 2023-04-06 | Lam Research Corporation | Process tool for dry removal of photoresist |
| JP7681106B2 (ja) | 2020-12-08 | 2025-05-21 | ラム リサーチ コーポレーション | 有機蒸気によるフォトレジストの現像 |
| KR102948301B1 (ko) * | 2021-08-06 | 2026-04-07 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| KR102725782B1 (ko) | 2022-07-01 | 2024-11-05 | 램 리써치 코포레이션 | 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상 |
| US12585185B2 (en) * | 2022-07-22 | 2026-03-24 | Tokyo Electron Limited | Acid for reactive development of metal oxide resists |
| US12332568B2 (en) * | 2022-08-03 | 2025-06-17 | Tokyo Electron Limited | Metal oxide resists for EUV patterning and methods for developing the same |
| JP7811164B2 (ja) * | 2022-08-26 | 2026-02-04 | 三菱ケミカル株式会社 | パターン基板の製造方法および半導体デバイスの製造方法 |
| US12474640B2 (en) | 2023-03-17 | 2025-11-18 | Lam Research Corporation | Integration of dry development and etch processes for EUV patterning in a single process chamber |
| JP7852072B2 (ja) * | 2023-07-27 | 2026-04-27 | ラム リサーチ コーポレーション | 金属含有フォトレジストのためのオールインワン乾式現像 |
| JP2025034615A (ja) * | 2023-08-31 | 2025-03-13 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US20250093778A1 (en) * | 2023-09-18 | 2025-03-20 | Tokyo Electron Limited | Method for area selective deposition on extreme ultra-violet (euv) photoresists |
| US20250118557A1 (en) * | 2023-10-05 | 2025-04-10 | Applied Materials, Inc. | Selective hardmask etch for semiconductor processing |
| US20250118555A1 (en) * | 2023-10-10 | 2025-04-10 | Tokyo Electron Limited | Selective passivation of photoresists |
| WO2025101667A1 (en) * | 2023-11-10 | 2025-05-15 | Lam Research Corporation | Diffusion barriers to reduce queue-time effects in euv lithography |
| US20250180987A1 (en) * | 2023-12-01 | 2025-06-05 | Applied Materials, Inc. | Dry development for metal-oxide photo resists |
| CN118818889A (zh) * | 2024-06-28 | 2024-10-22 | 长春理工大学 | 一种基于光电混合卷积神经网络的掩膜版制备方法 |
| CN121115410A (zh) * | 2025-11-06 | 2025-12-12 | 华睿芯材(无锡)科技有限公司 | 一种光刻胶前处理工艺提升微纳结构光滑度的方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| KR102394042B1 (ko) | 2016-03-11 | 2022-05-03 | 인프리아 코포레이션 | 사전패터닝된 리소그래피 템플레이트, 상기 템플레이트를 이용한 방사선 패터닝에 기초한 방법 및 상기 템플레이트를 형성하기 위한 방법 |
| WO2018004646A1 (en) | 2016-07-01 | 2018-01-04 | Intel Corporation | Metal oxide resist materials |
| WO2018048925A1 (en) * | 2016-09-06 | 2018-03-15 | Tokyo Electron Limited | Method of quasi atomic layer etching |
| KR102550498B1 (ko) * | 2017-02-22 | 2023-06-30 | 도쿄엘렉트론가부시키가이샤 | 패턴 전사 및 리소그래피 결함을 감소시키기 위한 방법 |
| US20190131130A1 (en) | 2017-10-31 | 2019-05-02 | Lam Research Corporation | Etching metal oxide substrates using ale and selective deposition |
| US11437238B2 (en) | 2018-07-09 | 2022-09-06 | Applied Materials, Inc. | Patterning scheme to improve EUV resist and hard mask selectivity |
| US12211691B2 (en) | 2018-12-20 | 2025-01-28 | Lam Research Corporation | Dry development of resists |
| TWI837391B (zh) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| US12416863B2 (en) | 2020-07-01 | 2025-09-16 | Applied Materials, Inc. | Dry develop process of photoresist |
| US11621172B2 (en) | 2020-07-01 | 2023-04-04 | Applied Materials, Inc. | Vapor phase thermal etch solutions for metal oxo photoresists |
| US11079682B1 (en) * | 2020-11-13 | 2021-08-03 | Tokyo Electron Limited | Methods for extreme ultraviolet (EUV) resist patterning development |
| US20230107357A1 (en) | 2020-11-13 | 2023-04-06 | Lam Research Corporation | Process tool for dry removal of photoresist |
| JP7681106B2 (ja) | 2020-12-08 | 2025-05-21 | ラム リサーチ コーポレーション | 有機蒸気によるフォトレジストの現像 |
-
2020
- 2020-11-13 US US17/097,921 patent/US11079682B1/en active Active
-
2021
- 2021-11-11 WO PCT/US2021/058963 patent/WO2022103949A1/en not_active Ceased
- 2021-11-11 KR KR1020237019733A patent/KR20230101906A/ko active Pending
- 2021-11-11 CN CN202180090343.XA patent/CN116830243A/zh active Pending
- 2021-11-11 JP JP2023528544A patent/JP7812041B2/ja active Active
- 2021-11-11 US US17/910,587 patent/US12189297B2/en active Active
- 2021-11-12 TW TW110142177A patent/TW202234140A/zh unknown
-
2025
- 2025-11-26 JP JP2025204442A patent/JP2026035712A/ja active Pending
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