JP2023541730A - パッケージング構造及びその製造方法 - Google Patents
パッケージング構造及びその製造方法 Download PDFInfo
- Publication number
- JP2023541730A JP2023541730A JP2021578142A JP2021578142A JP2023541730A JP 2023541730 A JP2023541730 A JP 2023541730A JP 2021578142 A JP2021578142 A JP 2021578142A JP 2021578142 A JP2021578142 A JP 2021578142A JP 2023541730 A JP2023541730 A JP 2023541730A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- solder resist
- conductive circuit
- circuit
- packaging structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 179
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 113
- 229910000679 solder Inorganic materials 0.000 claims abstract description 209
- 238000000034 method Methods 0.000 claims abstract description 63
- 238000009713 electroplating Methods 0.000 claims abstract description 25
- 239000010410 layer Substances 0.000 claims description 598
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 83
- 239000010949 copper Substances 0.000 claims description 73
- 229910052802 copper Inorganic materials 0.000 claims description 73
- 238000005530 etching Methods 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 239000002335 surface treatment layer Substances 0.000 claims description 12
- 238000003466 welding Methods 0.000 claims description 12
- 239000005022 packaging material Substances 0.000 claims description 9
- 238000003618 dip coating Methods 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 8
- 238000005507 spraying Methods 0.000 claims description 8
- 238000005476 soldering Methods 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 18
- 238000007747 plating Methods 0.000 description 13
- 238000011161 development Methods 0.000 description 11
- 239000011889 copper foil Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012467 final product Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Auxiliary Devices For And Details Of Packaging Control (AREA)
- Containers And Plastic Fillers For Packaging (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110937129.5 | 2021-08-16 | ||
| CN202110937129.5A CN115706017A (zh) | 2021-08-16 | 2021-08-16 | 一种封装机构及其制备方法 |
| PCT/CN2021/119973 WO2023019684A1 (zh) | 2021-08-16 | 2021-09-23 | 一种封装机构及其制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2023541730A true JP2023541730A (ja) | 2023-10-04 |
Family
ID=85180370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021578142A Pending JP2023541730A (ja) | 2021-08-16 | 2021-09-23 | パッケージング構造及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2023541730A (zh) |
| CN (1) | CN115706017A (zh) |
| TW (1) | TWI790880B (zh) |
| WO (1) | WO2023019684A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117156730B (zh) * | 2023-10-31 | 2024-01-26 | 江苏普诺威电子股份有限公司 | 嵌入式封装基板及其制作方法、堆叠封装结构 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5587882A (en) * | 1995-08-30 | 1996-12-24 | Hewlett-Packard Company | Thermal interface for a heat sink and a plurality of integrated circuits mounted on a substrate |
| EP2287897A3 (en) * | 1996-05-27 | 2011-11-02 | Dai Nippon Printing Co., Ltd. | Circuit member for semiconductor device, semiconductor device using the same, and process for producing said circuit member and said semiconductor device |
| TWI355054B (en) * | 2008-05-16 | 2011-12-21 | Unimicron Technology Corp | Method for fabricating a packaging substrate |
| US20140295623A1 (en) * | 2013-03-29 | 2014-10-02 | Kinsus Interconnect Technology Corp. | Method of packaging a chip and a substrate |
| CN103268871B (zh) * | 2013-05-20 | 2015-11-18 | 江苏长电科技股份有限公司 | 超薄高密度多层线路芯片正装封装结构及制作方法 |
| CN106486382B (zh) * | 2015-08-28 | 2019-06-18 | 碁鼎科技秦皇岛有限公司 | 封装基板、封装结构及其制作方法 |
| TWI582921B (zh) * | 2015-12-02 | 2017-05-11 | 南茂科技股份有限公司 | 半導體封裝結構及其製作方法 |
| CN112086417B (zh) * | 2020-10-28 | 2021-02-12 | 广东佛智芯微电子技术研究有限公司 | 一种高效散热的多芯片3d堆叠封装结构及封装方法 |
| CN112928028A (zh) * | 2021-01-22 | 2021-06-08 | 广东佛智芯微电子技术研究有限公司 | 一种具有嵌入式线路的板级芯片封装方法及其封装结构 |
-
2021
- 2021-08-16 CN CN202110937129.5A patent/CN115706017A/zh active Pending
- 2021-09-23 JP JP2021578142A patent/JP2023541730A/ja active Pending
- 2021-09-23 WO PCT/CN2021/119973 patent/WO2023019684A1/zh unknown
- 2021-12-29 TW TW110149465A patent/TWI790880B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW202310092A (zh) | 2023-03-01 |
| WO2023019684A1 (zh) | 2023-02-23 |
| CN115706017A (zh) | 2023-02-17 |
| TWI790880B (zh) | 2023-01-21 |
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Legal Events
| Date | Code | Title | Description |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211228 |
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| A131 | Notification of reasons for refusal |
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| A521 | Request for written amendment filed |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240319 |
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| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240529 |