JP2023534389A - 強誘電的に変調された金属－半導体ショットキーダイオードを有するニューロンおよびシナプス、ならびに方法 - Google Patents

強誘電的に変調された金属－半導体ショットキーダイオードを有するニューロンおよびシナプス、ならびに方法 Download PDF

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JP2023534389A
JP2023534389A JP2022577164A JP2022577164A JP2023534389A JP 2023534389 A JP2023534389 A JP 2023534389A JP 2022577164 A JP2022577164 A JP 2022577164A JP 2022577164 A JP2022577164 A JP 2022577164A JP 2023534389 A JP2023534389 A JP 2023534389A
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JP2023534389A5 (enExample
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ザオ，チン－タイ
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Forschungszentrum Jülich
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Neurology (AREA)
  • Theoretical Computer Science (AREA)
  • Biophysics (AREA)
  • Artificial Intelligence (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Computational Linguistics (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2022577164A 2020-06-16 2021-06-08 強誘電的に変調された金属－半導体ショットキーダイオードを有するニューロンおよびシナプス、ならびに方法 Withdrawn JP2023534389A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102020207439.9 2020-06-16
DE102020207439.9A DE102020207439A1 (de) 2020-06-16 2020-06-16 Neuronen und Synapsen mit ferroelektrisch modulierten Metall-Halbleiter Schottky Dioden nebst Verfahren
PCT/EP2021/065297 WO2021254830A1 (de) 2020-06-16 2021-06-08 Neuronen und synapsen mit ferroelektrisch modulierten metall-halbleiter schottky dioden nebst verfahren

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JP2023534389A true JP2023534389A (ja) 2023-08-09
JP2023534389A5 JP2023534389A5 (enExample) 2024-04-05

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US (1) US20230231030A1 (enExample)
EP (1) EP4133419B1 (enExample)
JP (1) JP2023534389A (enExample)
CN (1) CN115668226A (enExample)
DE (1) DE102020207439A1 (enExample)
WO (1) WO2021254830A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024068667A (ja) * 2022-11-08 2024-05-20 リサーチ アンド ビジネス ファウンデーション ソンギュングァン ユニバーシティ 接合構造素子、この製造方法及びこれを備えるインメモリーコンピューター素子

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220012576A1 (en) * 2020-07-09 2022-01-13 Korea Advanced Institute Of Science And Technology Charge trap based neuromorphic synaptic transistor with improved linearity and symmetricity by schottky junctions, and a neuromorphic system using it
CN117199166A (zh) * 2022-05-31 2023-12-08 复旦大学 一种极化场调控的正负光响应探测器及其制备方法和应用
KR102926808B1 (ko) 2023-08-30 2026-02-12 고려대학교 산학협력단 실리콘 게이티드 다이오드를 이용한 이진화 신경망 회로

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JP2715722B2 (ja) 1991-08-23 1998-02-18 日本電気株式会社 半導体シナプス回路とその製造方法、及び半導体ニューロン素子、及び半導体−超伝導体複合ニューロン素子
US9660067B2 (en) * 2014-03-25 2017-05-23 Intel Corporation III-N transistors with epitaxial layers providing steep subthreshold swing
DE102016111237B3 (de) 2016-06-20 2017-11-23 Namlab Ggmbh Rekonfigurierbarer Nanodraht-Feldeffekt-Transistor und dessen Herstellung sowie ein Nanodraht-Array und dessen Rekonfigurierung
US10510903B2 (en) * 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Impact ionization semiconductor device and manufacturing method thereof
CN106653837B (zh) * 2016-12-02 2019-09-13 电子科技大学 一种氮化镓双向开关器件
WO2019066959A1 (en) * 2017-09-29 2019-04-04 Intel Corporation FERROELECTRIC NEURONS AND SYNAPES
US10658030B2 (en) 2017-11-29 2020-05-19 International Business Machines Corporation Synaptic crossbar memory array
US10374041B2 (en) * 2017-12-21 2019-08-06 International Business Machines Corporation Field effect transistor with controllable resistance
WO2019139598A1 (en) * 2018-01-11 2019-07-18 Intel Corporation Ferroelectric neurons and synapses with dual gate ferroelectric transistors
WO2019147859A2 (en) 2018-01-24 2019-08-01 The Regents Of The University Of California Synaptic resistors for concurrent parallel signal processing, memory and learning with high speed and energy efficiency
US10963776B2 (en) * 2018-08-24 2021-03-30 Namlab Ggmbh Artificial neuron based on ferroelectric circuit element
CN208922326U (zh) 2018-10-29 2019-05-31 南京邮电大学 一种基于忆阻器阵列的神经网络突触觉结构

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024068667A (ja) * 2022-11-08 2024-05-20 リサーチ アンド ビジネス ファウンデーション ソンギュングァン ユニバーシティ 接合構造素子、この製造方法及びこれを備えるインメモリーコンピューター素子

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DE102020207439A1 (de) 2021-12-16
EP4133419B1 (de) 2025-03-26
US20230231030A1 (en) 2023-07-20
EP4133419A1 (de) 2023-02-15
CN115668226A (zh) 2023-01-31
EP4133419C0 (de) 2025-03-26
WO2021254830A1 (de) 2021-12-23

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