JP2023524170A - スタックダイを用いる半導体ダイ(「ダイ」)モジュールを容易にするための分割された両面のメタライゼーション構造を用いる集積回路(ic)パッケージ、および関連する製造方法 - Google Patents
スタックダイを用いる半導体ダイ(「ダイ」)モジュールを容易にするための分割された両面のメタライゼーション構造を用いる集積回路(ic)パッケージ、および関連する製造方法 Download PDFInfo
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Abstract
Description
以下に、本願の出願当初の特許請求の範囲に記載された発明を付記する。
[C1]
集積回路(IC)パッケージであって、
少なくとも1つの第1のインターコネクト層を備える第1のメタライゼーション構造と、
少なくとも1つの第2のインターコネクト層を備える第2のメタライゼーション構造と、
前記第1のメタライゼーション構造と前記第2のメタライゼーション構造との間に配設されたICダイモジュールと、
を備え、前記ICダイモジュールは、
第1の活性表面および第1の非活性表面を備える第1のICダイと、
第2の活性表面および第2の非活性表面を備える第2のICダイと、
前記第1のICダイの前記第1の非活性表面を前記第2のICダイの前記第2の非活性表面に結合する、前記第1のICダイの前記第1の非活性表面と前記第2のICダイの前記第2の非活性表面との間の圧着接合部と、
を備え、
前記第1のICダイの前記第1の非活性表面は、前記第1のメタライゼーション構造の前記少なくとも1つの第1のインターコネクト層に電気的に結合され、
前記第2のICダイの前記第2の非活性表面は、前記第2のメタライゼーション構造の前記少なくとも1つの第2のインターコネクト層に電気的に結合される、
ICパッケージ。
[C2]
前記第1のメタライゼーション構造は、第1の水平面に配設され、
前記第2のメタライゼーション構造は、前記第1の水平面と平行である第2の水平面に配設され、
前記第1のICダイは、前記第1の水平面と平行である第3の水平面に配設され、
前記第2のICダイは、前記第1の水平面と平行である前記第2の水平面に配設される、
C1に記載のICパッケージ。
[C3]
前記第1のメタライゼーション構造は、第1の再配線層(RDL)構造を備え、
前記第2のメタライゼーション構造は、第2のRDL構造を備える、
C1に記載のICパッケージ。
[C4]
前記第1のメタライゼーション構造は、第1のパッケージ基板を備え、
前記第2のメタライゼーション構造は、第2のパッケージ基板を備える、
C1に記載のICパッケージ。
[C5]
前記第1のICダイの前記第1の活性表面は、第1の下部活性表面を備え、
前記第1のICダイの前記第1の非活性表面は、第1の上部非活性表面を備え、
前記第2のICダイの前記第2の活性表面は、第2の下部活性表面を備え、
前記第2のICダイの前記第2の非活性表面は、第2の上部非活性表面を備える、
C1に記載のICパッケージ。
[C6]
前記第1のICダイは、前記第1の活性表面から露出した少なくとも1つの第1のダイインターコネクトをさらに備え、
前記第2のICダイは、前記第2の活性表面から露出した少なくとも1つの第2のダイインターコネクトをさらに備え、
前記少なくとも1つの第1のダイインターコネクトを前記少なくとも1つの第1のインターコネクト層に電気的に結合する、前記少なくとも1つの第1のダイインターコネクトと前記少なくとも1つの第1のインターコネクト層との間の第1の圧着接合部と、
前記少なくとも1つの第2のダイインターコネクトを前記少なくとも1つの第2のインターコネクト層に電気的に結合する、前記少なくとも1つの第2のダイインターコネクトと前記少なくとも1つの第2のインターコネクト層との間の第2の圧着接合部と、
をさらに備える、C1に記載のICパッケージ。
[C7]
前記第1のメタライゼーション構造は、前記少なくとも1つの第1のインターコネクト層に電気的に結合された少なくとも1つの第1の基板インターコネクトをさらに備え、
前記第2のメタライゼーション構造は、前記少なくとも1つの第2のインターコネクト層に電気的に結合された少なくとも1つの第2の基板インターコネクトをさらに備え、
前記少なくとも1つの第1のダイインターコネクトは、前記少なくとも1つの第1のインターコネクト層に電気的に結合されるように前記少なくとも1つの第1の基板インターコネクトに電気的に結合され、
前記少なくとも1つの第2のダイインターコネクトは、前記少なくとも1つの第2のインターコネクト層に電気的に結合されるように前記少なくとも1つの第2の基板インターコネクトに電気的に結合される、
C6に記載のICパッケージ。
[C8]
前記第1の水平面と直角の高さ軸方向における前記第1のメタライゼーション構造の高さは、15マイクロメートル(μm)~150μmであり、
前記第1の水平面と直角の前記高さ軸方向における前記第2のメタライゼーション構造の高さは、15μm~150μmである、
C2に記載のICパッケージ。
[C9]
前記第1の水平面と直角の前記高さ軸方向における前記ICダイモジュールの高さは、100μm~600μmである、C8に記載のICパッケージ。
[C10]
前記第1の水平面と直角の高さ軸方向における前記ICダイモジュールの高さと、前記高さ軸方向における前記第1のメタライゼーション構造および前記第2のメタライゼーション構造を組み合わせた高さとの比は、0.33~20.0である、C2に記載のICパッケージ。
[C11]
前記ICダイモジュールは、第3の活性表面および第3の非活性表面を備える第3のICダイをさらに備え、
前記第3のICダイの前記第3の非活性表面と前記第1のICダイの前記第1の非活性表面との間の圧着接合部は、前記第1のICダイの前記第3の非活性表面を前記第1のICダイの前記第1の非活性表面に電気的に結合し、
前記第3のICダイの前記第3の非活性表面は、前記第2のメタライゼーション構造の前記少なくとも1つの第2のインターコネクト層に電気的に結合される、
C1に記載のICパッケージ。
[C12]
前記第3のICダイは、前記第3の活性表面から露出した少なくとも1つの第3のダイインターコネクトをさらに備え、
前記少なくとも1つの第3のダイインターコネクトを前記少なくとも1つの第2のインターコネクト層に電気的に結合する、前記少なくとも1つの第3のダイインターコネクトと前記少なくとも1つの第2のインターコネクト層との間の第3の圧着接合部をさらに備える、
C11に記載のICパッケージ。
[C13]
前記ICダイモジュールは、前記第1のICダイおよび前記第2のICダイに隣接して配設された少なくとも1つの受動電気デバイスをさらに備え、
前記少なくとも1つの受動電気デバイスは、前記第1のメタライゼーション構造の前記少なくとも1つの第1のインターコネクト層および前記第2のメタライゼーション構造の前記少なくとも1つの第2のインターコネクト層に電気的に結合される、
C1に記載のICパッケージ。
[C14]
前記ICダイモジュールは、前記第1のICダイおよび前記第2のICダイに隣接して配設された少なくとも1つの垂直インターコネクトアクセス(ビア)をさらに備え、
前記少なくとも1つのビアは、前記第1のメタライゼーション構造の少なくとも1つの第1のインターコネクト層および前記第2のメタライゼーション構造の少なくとも1つの第2のインターコネクト層に電気的に結合される、
C1に記載のICパッケージ。
[C15]
前記第1のメタライゼーション構造の少なくとも1つの第1のインターコネクト層に電気的に結合された少なくとも1つのはんだバンプ(bump)をさらに備える、C1に記載のICパッケージ。
[C16]
セットトップボックス、エンターテインメントユニット、ナビゲーションデバイス、通信デバイス、固定ロケーションデータユニット、モバイルロケーションデータユニット、全世界測位システム(GPS)デバイス、モバイルフォン、セルラフォン、スマートフォン、セッション開始プロトコル(SIP)フォン、タブレット、ファブレット、サーバ、コンピュータ、ポータブルコンピュータ、モバイルコンピューティングデバイス、ウェアラブルコンピューティングデバイス、デスクトップコンピュータ、携帯情報端末(PDA)、モニタ、コンピュータモニタ、テレビジョン、チューナ、ラジオ、衛星ラジオ、音楽プレーヤ、デジタル音楽プレーヤ、ポータブル音楽プレーヤ、デジタルビデオプレーヤ、ビデオプレーヤ、デジタルビデオディスク(DVD)プレーヤ、ポータブルデジタルビデオプレーヤ、自動車、車両用コンポーネント、アビオニクスシステム、ドローン、およびマルチコプタからなるグループから選択されるデバイスに一体化される、C1に記載のICパッケージ。
[C17]
集積回路(IC)パッケージを製造する方法であって、
少なくとも1つの第1のインターコネクト層を備える第1のメタライゼーション構造を製造することと、
少なくとも1つの第2のインターコネクト層を備える第2のメタライゼーション構造を製造することと、
前記第1のメタライゼーション構造と前記第2のメタライゼーション構造との間に配設されたICダイモジュールを製造することと、ここで、前記ICダイモジュールを製造することは、
第1の活性表面および第1の非活性表面を備える第1のICダイを設けること、
第2の活性表面および第2の非活性表面を備える第2のICダイを設けること、および、
前記第1のICダイを前記第2のICダイに結合するために、前記第1のICダイの前記第1の非活性表面を前記第2のICダイの前記第2の非活性表面に圧着接合すること、
を備え、
前記第1のICダイの前記第1の活性表面を前記第1のメタライゼーション構造の前記少なくとも1つの第1のインターコネクト層に電気的に結合することと、
前記第2のICダイの前記第2の活性表面を前記第2のメタライゼーション構造の前記少なくとも1つの第2のインターコネクト層に電気的に結合することと、
を備える、方法。
[C18]
前記第1のICダイの前記第1の非活性表面を前記第2のICダイの前記第2の非活性表面に圧着接合することは、
前記第1のICダイの前記第1の非活性表面上に第1の酸化物層を配設することと、
前記第2のICダイの前記第2の非活性表面上に第2の酸化物層を配設することと、
前記第1の非活性表面上の前記第1の酸化物層を前記第2の非活性表面上の前記第2の酸化物層に圧着することと、
を備える、C17に記載の方法。
[C19]
前記第1の非活性表面を前記第2の非活性表面に圧着接合することは、前記第1の非活性表面上の前記第1の酸化物層を前記第2の非活性表面上の前記第2の酸化物層に圧着する前に、
前記第1の酸化物層の温度を摂氏150~180度に上昇させることと、
前記第2の酸化物層の温度を摂氏150~180度に上昇させることと、
をさらに備える、C18に記載の方法。
[C20]
前記第1の非活性表面を前記第2の非活性表面に圧着接合することは、
前記第1のICダイの前記第1の活性表面上に第1の仮接合フィルムを形成することと、
前記第1の仮接合フィルム上に第1のキャリアをマウントすることと、
前記第2のICダイの前記第2の活性表面上に第2の仮接合フィルムを形成することと、
前記第2の仮接合フィルム上に第2のキャリアをマウントすることと、
前記第1のICダイの前記第1の非活性表面を前記第2のICダイの前記第2の非活性表面に圧着することと、
を備える、C17に記載の方法。
[C21]
前記第1のICダイの前記第1の活性表面を前記第1のメタライゼーション構造の前記少なくとも1つの第1のインターコネクト層に電気的に結合することは、前記第1のICダイの前記第1の活性表面を前記第1のメタライゼーション構造に圧着接合することをさらに備え、
前記第1のICダイの前記第2の活性表面を前記第1のメタライゼーション構造の前記少なくとも1つの第2のインターコネクト層に電気的に結合することは、前記第2のICダイの前記第2の活性表面を前記第2のメタライゼーション構造に圧着接合することをさらに備える、
C17に記載の方法。
[C22]
前記第1のICダイの前記第1の活性表面を前記第1のメタライゼーション構造に圧着接合する前に、
前記第1のメタライゼーション構造の温度を摂氏150~180度に上昇させることと、
前記第2のICダイの前記第2の活性表面を前記第2のメタライゼーション構造に圧着接合する前に、
前記第2のメタライゼーション構造の温度を摂氏150~180度に上昇させることと、
をさらに備える、C21に記載の方法。
[C23]
前記ICダイモジュールを製造することは、前記第1のICダイに隣接する前記第1のメタライゼーション構造上に電気的コンポーネントを配設することをさらに備える、C17に記載の方法。
[C24]
前記ICダイモジュールを製造することは、前記第1のICダイおよび前記第2のICダイを覆って成形材料を配設することをさらに備える、C17に記載の方法。
[C25]
前記第1のメタライゼーション構造の前記少なくとも1つの第1のインターコネクト層と電気的に接触する1つまたは複数のはんだボールを形成することをさらに備える、C23に記載の方法。
Claims (25)
- 集積回路(IC)パッケージであって、
少なくとも1つの第1のインターコネクト層を備える第1のメタライゼーション構造と、
少なくとも1つの第2のインターコネクト層を備える第2のメタライゼーション構造と、
前記第1のメタライゼーション構造と前記第2のメタライゼーション構造との間に配設されたICダイモジュールと、
を備え、前記ICダイモジュールは、
第1の活性表面および第1の非活性表面を備える第1のICダイと、
第2の活性表面および第2の非活性表面を備える第2のICダイと、
前記第1のICダイの前記第1の非活性表面を前記第2のICダイの前記第2の非活性表面に結合する、前記第1のICダイの前記第1の非活性表面と前記第2のICダイの前記第2の非活性表面との間の圧着接合部と、
を備え、
前記第1のICダイの前記第1の非活性表面は、前記第1のメタライゼーション構造の前記少なくとも1つの第1のインターコネクト層に電気的に結合され、
前記第2のICダイの前記第2の非活性表面は、前記第2のメタライゼーション構造の前記少なくとも1つの第2のインターコネクト層に電気的に結合される、
ICパッケージ。 - 前記第1のメタライゼーション構造は、第1の水平面に配設され、
前記第2のメタライゼーション構造は、前記第1の水平面と平行である第2の水平面に配設され、
前記第1のICダイは、前記第1の水平面と平行である第3の水平面に配設され、
前記第2のICダイは、前記第1の水平面と平行である前記第2の水平面に配設される、
請求項1に記載のICパッケージ。 - 前記第1のメタライゼーション構造は、第1の再配線層(RDL)構造を備え、
前記第2のメタライゼーション構造は、第2のRDL構造を備える、
請求項1に記載のICパッケージ。 - 前記第1のメタライゼーション構造は、第1のパッケージ基板を備え、
前記第2のメタライゼーション構造は、第2のパッケージ基板を備える、
請求項1に記載のICパッケージ。 - 前記第1のICダイの前記第1の活性表面は、第1の下部活性表面を備え、
前記第1のICダイの前記第1の非活性表面は、第1の上部非活性表面を備え、
前記第2のICダイの前記第2の活性表面は、第2の下部活性表面を備え、
前記第2のICダイの前記第2の非活性表面は、第2の上部非活性表面を備える、
請求項1に記載のICパッケージ。 - 前記第1のICダイは、前記第1の活性表面から露出した少なくとも1つの第1のダイインターコネクトをさらに備え、
前記第2のICダイは、前記第2の活性表面から露出した少なくとも1つの第2のダイインターコネクトをさらに備え、
前記少なくとも1つの第1のダイインターコネクトを前記少なくとも1つの第1のインターコネクト層に電気的に結合する、前記少なくとも1つの第1のダイインターコネクトと前記少なくとも1つの第1のインターコネクト層との間の第1の圧着接合部と、
前記少なくとも1つの第2のダイインターコネクトを前記少なくとも1つの第2のインターコネクト層に電気的に結合する、前記少なくとも1つの第2のダイインターコネクトと前記少なくとも1つの第2のインターコネクト層との間の第2の圧着接合部と、
をさらに備える、請求項1に記載のICパッケージ。 - 前記第1のメタライゼーション構造は、前記少なくとも1つの第1のインターコネクト層に電気的に結合された少なくとも1つの第1の基板インターコネクトをさらに備え、
前記第2のメタライゼーション構造は、前記少なくとも1つの第2のインターコネクト層に電気的に結合された少なくとも1つの第2の基板インターコネクトをさらに備え、
前記少なくとも1つの第1のダイインターコネクトは、前記少なくとも1つの第1のインターコネクト層に電気的に結合されるように前記少なくとも1つの第1の基板インターコネクトに電気的に結合され、
前記少なくとも1つの第2のダイインターコネクトは、前記少なくとも1つの第2のインターコネクト層に電気的に結合されるように前記少なくとも1つの第2の基板インターコネクトに電気的に結合される、
請求項6に記載のICパッケージ。 - 前記第1の水平面と直角の高さ軸方向における前記第1のメタライゼーション構造の高さは、15マイクロメートル(μm)~150μmであり、
前記第1の水平面と直角の前記高さ軸方向における前記第2のメタライゼーション構造の高さは、15μm~150μmである、
請求項2に記載のICパッケージ。 - 前記第1の水平面と直角の前記高さ軸方向における前記ICダイモジュールの高さは、100μm~600μmである、請求項8に記載のICパッケージ。
- 前記第1の水平面と直角の高さ軸方向における前記ICダイモジュールの高さと、前記高さ軸方向における前記第1のメタライゼーション構造および前記第2のメタライゼーション構造を組み合わせた高さとの比は、0.33~20.0である、請求項2に記載のICパッケージ。
- 前記ICダイモジュールは、第3の活性表面および第3の非活性表面を備える第3のICダイをさらに備え、
前記第3のICダイの前記第3の非活性表面と前記第1のICダイの前記第1の非活性表面との間の圧着接合部は、前記第1のICダイの前記第3の非活性表面を前記第1のICダイの前記第1の非活性表面に電気的に結合し、
前記第3のICダイの前記第3の非活性表面は、前記第2のメタライゼーション構造の前記少なくとも1つの第2のインターコネクト層に電気的に結合される、
請求項1に記載のICパッケージ。 - 前記第3のICダイは、前記第3の活性表面から露出した少なくとも1つの第3のダイインターコネクトをさらに備え、
前記少なくとも1つの第3のダイインターコネクトを前記少なくとも1つの第2のインターコネクト層に電気的に結合する、前記少なくとも1つの第3のダイインターコネクトと前記少なくとも1つの第2のインターコネクト層との間の第3の圧着接合部をさらに備える、
請求項11に記載のICパッケージ。 - 前記ICダイモジュールは、前記第1のICダイおよび前記第2のICダイに隣接して配設された少なくとも1つの受動電気デバイスをさらに備え、
前記少なくとも1つの受動電気デバイスは、前記第1のメタライゼーション構造の前記少なくとも1つの第1のインターコネクト層および前記第2のメタライゼーション構造の前記少なくとも1つの第2のインターコネクト層に電気的に結合される、
請求項1に記載のICパッケージ。 - 前記ICダイモジュールは、前記第1のICダイおよび前記第2のICダイに隣接して配設された少なくとも1つの垂直インターコネクトアクセス(ビア)をさらに備え、
前記少なくとも1つのビアは、前記第1のメタライゼーション構造の少なくとも1つの第1のインターコネクト層および前記第2のメタライゼーション構造の少なくとも1つの第2のインターコネクト層に電気的に結合される、
請求項1に記載のICパッケージ。 - 前記第1のメタライゼーション構造の少なくとも1つの第1のインターコネクト層に電気的に結合された少なくとも1つのはんだバンプ(bump)をさらに備える、請求項1に記載のICパッケージ。
- セットトップボックス、エンターテインメントユニット、ナビゲーションデバイス、通信デバイス、固定ロケーションデータユニット、モバイルロケーションデータユニット、全世界測位システム(GPS)デバイス、モバイルフォン、セルラフォン、スマートフォン、セッション開始プロトコル(SIP)フォン、タブレット、ファブレット、サーバ、コンピュータ、ポータブルコンピュータ、モバイルコンピューティングデバイス、ウェアラブルコンピューティングデバイス、デスクトップコンピュータ、携帯情報端末(PDA)、モニタ、コンピュータモニタ、テレビジョン、チューナ、ラジオ、衛星ラジオ、音楽プレーヤ、デジタル音楽プレーヤ、ポータブル音楽プレーヤ、デジタルビデオプレーヤ、ビデオプレーヤ、デジタルビデオディスク(DVD)プレーヤ、ポータブルデジタルビデオプレーヤ、自動車、車両用コンポーネント、アビオニクスシステム、ドローン、およびマルチコプタからなるグループから選択されるデバイスに一体化される、請求項1に記載のICパッケージ。
- 集積回路(IC)パッケージを製造する方法であって、
少なくとも1つの第1のインターコネクト層を備える第1のメタライゼーション構造を製造することと、
少なくとも1つの第2のインターコネクト層を備える第2のメタライゼーション構造を製造することと、
前記第1のメタライゼーション構造と前記第2のメタライゼーション構造との間に配設されたICダイモジュールを製造することと、ここで、前記ICダイモジュールを製造することは、
第1の活性表面および第1の非活性表面を備える第1のICダイを設けること、
第2の活性表面および第2の非活性表面を備える第2のICダイを設けること、および、
前記第1のICダイを前記第2のICダイに結合するために、前記第1のICダイの前記第1の非活性表面を前記第2のICダイの前記第2の非活性表面に圧着接合すること、
を備え、
前記第1のICダイの前記第1の活性表面を前記第1のメタライゼーション構造の前記少なくとも1つの第1のインターコネクト層に電気的に結合することと、
前記第2のICダイの前記第2の活性表面を前記第2のメタライゼーション構造の前記少なくとも1つの第2のインターコネクト層に電気的に結合することと、
を備える、方法。 - 前記第1のICダイの前記第1の非活性表面を前記第2のICダイの前記第2の非活性表面に圧着接合することは、
前記第1のICダイの前記第1の非活性表面上に第1の酸化物層を配設することと、
前記第2のICダイの前記第2の非活性表面上に第2の酸化物層を配設することと、
前記第1の非活性表面上の前記第1の酸化物層を前記第2の非活性表面上の前記第2の酸化物層に圧着することと、
を備える、請求項17に記載の方法。 - 前記第1の非活性表面を前記第2の非活性表面に圧着接合することは、前記第1の非活性表面上の前記第1の酸化物層を前記第2の非活性表面上の前記第2の酸化物層に圧着する前に、
前記第1の酸化物層の温度を摂氏150~180度に上昇させることと、
前記第2の酸化物層の温度を摂氏150~180度に上昇させることと、
をさらに備える、請求項18に記載の方法。 - 前記第1の非活性表面を前記第2の非活性表面に圧着接合することは、
前記第1のICダイの前記第1の活性表面上に第1の仮接合フィルムを形成することと、
前記第1の仮接合フィルム上に第1のキャリアをマウントすることと、
前記第2のICダイの前記第2の活性表面上に第2の仮接合フィルムを形成することと、
前記第2の仮接合フィルム上に第2のキャリアをマウントすることと、
前記第1のICダイの前記第1の非活性表面を前記第2のICダイの前記第2の非活性表面に圧着することと、
を備える、請求項17に記載の方法。 - 前記第1のICダイの前記第1の活性表面を前記第1のメタライゼーション構造の前記少なくとも1つの第1のインターコネクト層に電気的に結合することは、前記第1のICダイの前記第1の活性表面を前記第1のメタライゼーション構造に圧着接合することをさらに備え、
前記第1のICダイの前記第2の活性表面を前記第1のメタライゼーション構造の前記少なくとも1つの第2のインターコネクト層に電気的に結合することは、前記第2のICダイの前記第2の活性表面を前記第2のメタライゼーション構造に圧着接合することをさらに備える、
請求項17に記載の方法。 - 前記第1のICダイの前記第1の活性表面を前記第1のメタライゼーション構造に圧着接合する前に、
前記第1のメタライゼーション構造の温度を摂氏150~180度に上昇させることと、
前記第2のICダイの前記第2の活性表面を前記第2のメタライゼーション構造に圧着接合する前に、
前記第2のメタライゼーション構造の温度を摂氏150~180度に上昇させることと、
をさらに備える、請求項21に記載の方法。 - 前記ICダイモジュールを製造することは、前記第1のICダイに隣接する前記第1のメタライゼーション構造上に電気的コンポーネントを配設することをさらに備える、請求項17に記載の方法。
- 前記ICダイモジュールを製造することは、前記第1のICダイおよび前記第2のICダイを覆って成形材料を配設することをさらに備える、請求項17に記載の方法。
- 前記第1のメタライゼーション構造の前記少なくとも1つの第1のインターコネクト層と電気的に接触する1つまたは複数のはんだボールを形成することをさらに備える、請求項23に記載の方法。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003234451A (ja) * | 2002-02-06 | 2003-08-22 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US20090001821A1 (en) * | 2006-01-24 | 2009-01-01 | Nds Limited | Chip Attack Protection |
US20100314780A1 (en) * | 2009-06-12 | 2010-12-16 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming Vertical Interconnect Structure Between Non-Linear Portions of Conductive Layers |
US20160260695A1 (en) * | 2015-03-03 | 2016-09-08 | Apple Inc. | Fan out system in package and method for forming the same |
US20170084589A1 (en) * | 2015-09-23 | 2017-03-23 | Mediatek Inc. | Semiconductor package structure and method for forming the same |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001018864A1 (fr) | 1999-09-03 | 2001-03-15 | Seiko Epson Corporation | Dispositif a semi-conducteurs, son procede de fabrication, carte de circuit et dispositif electronique |
US20020074652A1 (en) | 2000-12-15 | 2002-06-20 | Pierce John L. | Method, apparatus and system for multiple chip assemblies |
US6590282B1 (en) * | 2002-04-12 | 2003-07-08 | Industrial Technology Research Institute | Stacked semiconductor package formed on a substrate and method for fabrication |
US9818680B2 (en) | 2011-07-27 | 2017-11-14 | Broadpak Corporation | Scalable semiconductor interposer integration |
US9390974B2 (en) * | 2012-12-21 | 2016-07-12 | Qualcomm Incorporated | Back-to-back stacked integrated circuit assembly and method of making |
JP2011165032A (ja) | 2010-02-12 | 2011-08-25 | Buffalo Inc | コンピュータプログラム及びデータバックアップ方法 |
CN103296014A (zh) * | 2012-02-28 | 2013-09-11 | 刘胜 | 扇出晶圆级半导体芯片三维堆叠封装结构及工艺 |
MY178559A (en) | 2014-07-07 | 2020-10-16 | Intel Corp | Package-on-package stacked microelectronic structures |
US9941207B2 (en) | 2014-10-24 | 2018-04-10 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of fabricating 3D package with short cycle time and high yield |
CN109103167B (zh) | 2017-06-20 | 2020-11-03 | 晟碟半导体(上海)有限公司 | 用于存储器装置的异构性扇出结构 |
US10134712B1 (en) * | 2017-08-23 | 2018-11-20 | Micron Technology, Inc. | Methods and systems for improving power delivery and signaling in stacked semiconductor devices |
KR102071457B1 (ko) | 2018-03-13 | 2020-01-30 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
US20210280523A1 (en) | 2020-03-04 | 2021-09-09 | Qualcomm Incorporated | Integrated circuit (ic) packages employing split, double-sided metallization structures to facilitate a semiconductor die ("die") module employing stacked dice, and related fabrication methods |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003234451A (ja) * | 2002-02-06 | 2003-08-22 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US20090001821A1 (en) * | 2006-01-24 | 2009-01-01 | Nds Limited | Chip Attack Protection |
US20100314780A1 (en) * | 2009-06-12 | 2010-12-16 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming Vertical Interconnect Structure Between Non-Linear Portions of Conductive Layers |
US20160260695A1 (en) * | 2015-03-03 | 2016-09-08 | Apple Inc. | Fan out system in package and method for forming the same |
US20170084589A1 (en) * | 2015-09-23 | 2017-03-23 | Mediatek Inc. | Semiconductor package structure and method for forming the same |
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