JP2023520035A5 - - Google Patents

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Publication number
JP2023520035A5
JP2023520035A5 JP2022559853A JP2022559853A JP2023520035A5 JP 2023520035 A5 JP2023520035 A5 JP 2023520035A5 JP 2022559853 A JP2022559853 A JP 2022559853A JP 2022559853 A JP2022559853 A JP 2022559853A JP 2023520035 A5 JP2023520035 A5 JP 2023520035A5
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JP
Japan
Prior art keywords
gases
substrate
edge ring
injection ports
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022559853A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023520035A (ja
JP7668814B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2021/022036 external-priority patent/WO2021202080A1/en
Publication of JP2023520035A publication Critical patent/JP2023520035A/ja
Publication of JP2023520035A5 publication Critical patent/JP2023520035A5/ja
Application granted granted Critical
Publication of JP7668814B2 publication Critical patent/JP7668814B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2022559853A 2020-04-02 2021-03-12 調節ガスの局所供給用エッジリング Active JP7668814B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063004132P 2020-04-02 2020-04-02
US63/004,132 2020-04-02
US202063041694P 2020-06-19 2020-06-19
US63/041,694 2020-06-19
PCT/US2021/022036 WO2021202080A1 (en) 2020-04-02 2021-03-12 Edge ring for localized delivery of tuning gas

Publications (3)

Publication Number Publication Date
JP2023520035A JP2023520035A (ja) 2023-05-15
JP2023520035A5 true JP2023520035A5 (https=) 2024-03-25
JP7668814B2 JP7668814B2 (ja) 2025-04-25

Family

ID=77929392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022559853A Active JP7668814B2 (ja) 2020-04-02 2021-03-12 調節ガスの局所供給用エッジリング

Country Status (6)

Country Link
US (1) US20230128551A1 (https=)
JP (1) JP7668814B2 (https=)
KR (1) KR102902661B1 (https=)
CN (1) CN115362544A (https=)
TW (1) TWI906275B (https=)
WO (1) WO2021202080A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115558905B (zh) * 2022-12-01 2023-07-07 浙江晶越半导体有限公司 一种提高碳化硅沉积速率与均匀性的方法与反应器
US20240304486A1 (en) * 2023-03-10 2024-09-12 Applied Materials, Inc. Differential substrate backside cooling
US20250121348A1 (en) * 2023-10-12 2025-04-17 Cristina Piekarz Modular regenerative hydrothermal reactor and methods for mineralization of recalcitrant organic compounds at hydrothermal operating conditions
CN120221381B (zh) * 2025-05-26 2025-07-25 上海邦芯半导体科技有限公司 边缘保护环及深硅刻蚀设备

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US6780759B2 (en) * 2001-05-09 2004-08-24 Silicon Genesis Corporation Method for multi-frequency bonding
JP4108465B2 (ja) * 2002-12-18 2008-06-25 東京エレクトロン株式会社 処理方法及び処理装置
US7658816B2 (en) * 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
US20050196971A1 (en) * 2004-03-05 2005-09-08 Applied Materials, Inc. Hardware development to reduce bevel deposition
US8097120B2 (en) 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
US8048226B2 (en) 2007-03-30 2011-11-01 Tokyo Electron Limited Method and system for improving deposition uniformity in a vapor deposition system
CN101552182B (zh) * 2008-03-31 2010-11-03 北京北方微电子基地设备工艺研究中心有限责任公司 一种用于半导体制造工艺中的边缘环机构
JP4591590B2 (ja) * 2008-10-31 2010-12-01 三菱電機株式会社 粒子線照射装置及び粒子線治療装置
US20130168352A1 (en) * 2011-12-28 2013-07-04 Andreas Fischer Methods and apparatuses for controlling plasma properties by controlling conductance between sub-chambers of a plasma processing chamber
US10410832B2 (en) * 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
KR102641441B1 (ko) * 2016-09-28 2024-02-29 삼성전자주식회사 링 어셈블리 및 이를 포함하는 척 어셈블리

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