JP7668814B2 - 調節ガスの局所供給用エッジリング - Google Patents

調節ガスの局所供給用エッジリング Download PDF

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Publication number
JP7668814B2
JP7668814B2 JP2022559853A JP2022559853A JP7668814B2 JP 7668814 B2 JP7668814 B2 JP 7668814B2 JP 2022559853 A JP2022559853 A JP 2022559853A JP 2022559853 A JP2022559853 A JP 2022559853A JP 7668814 B2 JP7668814 B2 JP 7668814B2
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Japan
Prior art keywords
gases
substrate
edge ring
gas
injection ports
Prior art date
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JP2022559853A
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English (en)
Japanese (ja)
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JP2023520035A (ja
JP2023520035A5 (https=
Inventor
シーパーサド・ヨハン
バイス・ライアン
ホーランド・ジョン
ベラウ・レオニド
メース・アダム・クリストファー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
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Lam Research Corp
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Publication date
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Publication of JP2023520035A5 publication Critical patent/JP2023520035A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2022559853A 2020-04-02 2021-03-12 調節ガスの局所供給用エッジリング Active JP7668814B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063004132P 2020-04-02 2020-04-02
US63/004,132 2020-04-02
US202063041694P 2020-06-19 2020-06-19
US63/041,694 2020-06-19
PCT/US2021/022036 WO2021202080A1 (en) 2020-04-02 2021-03-12 Edge ring for localized delivery of tuning gas

Publications (3)

Publication Number Publication Date
JP2023520035A JP2023520035A (ja) 2023-05-15
JP2023520035A5 JP2023520035A5 (https=) 2024-03-25
JP7668814B2 true JP7668814B2 (ja) 2025-04-25

Family

ID=77929392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022559853A Active JP7668814B2 (ja) 2020-04-02 2021-03-12 調節ガスの局所供給用エッジリング

Country Status (6)

Country Link
US (1) US20230128551A1 (https=)
JP (1) JP7668814B2 (https=)
KR (1) KR102902661B1 (https=)
CN (1) CN115362544A (https=)
TW (1) TWI906275B (https=)
WO (1) WO2021202080A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115558905B (zh) * 2022-12-01 2023-07-07 浙江晶越半导体有限公司 一种提高碳化硅沉积速率与均匀性的方法与反应器
US20240304486A1 (en) * 2023-03-10 2024-09-12 Applied Materials, Inc. Differential substrate backside cooling
US20250121348A1 (en) * 2023-10-12 2025-04-17 Cristina Piekarz Modular regenerative hydrothermal reactor and methods for mineralization of recalcitrant organic compounds at hydrothermal operating conditions
CN120221381B (zh) * 2025-05-26 2025-07-25 上海邦芯半导体科技有限公司 边缘保护环及深硅刻蚀设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004200353A (ja) 2002-12-18 2004-07-15 Tokyo Electron Ltd 処理方法及び処理装置
US20080236497A1 (en) 2007-03-30 2008-10-02 Tokyo Electon Limited Method and system for improving deposition uniformity in a vapor deposition system
JP2013211586A (ja) 2006-02-21 2013-10-10 Lam Research Corporation 基板縁部からの処理調整ガスの注入

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US6780759B2 (en) * 2001-05-09 2004-08-24 Silicon Genesis Corporation Method for multi-frequency bonding
US7658816B2 (en) * 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
US20050196971A1 (en) * 2004-03-05 2005-09-08 Applied Materials, Inc. Hardware development to reduce bevel deposition
CN101552182B (zh) * 2008-03-31 2010-11-03 北京北方微电子基地设备工艺研究中心有限责任公司 一种用于半导体制造工艺中的边缘环机构
JP4591590B2 (ja) * 2008-10-31 2010-12-01 三菱電機株式会社 粒子線照射装置及び粒子線治療装置
US20130168352A1 (en) * 2011-12-28 2013-07-04 Andreas Fischer Methods and apparatuses for controlling plasma properties by controlling conductance between sub-chambers of a plasma processing chamber
US10410832B2 (en) * 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
KR102641441B1 (ko) * 2016-09-28 2024-02-29 삼성전자주식회사 링 어셈블리 및 이를 포함하는 척 어셈블리

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004200353A (ja) 2002-12-18 2004-07-15 Tokyo Electron Ltd 処理方法及び処理装置
JP2013211586A (ja) 2006-02-21 2013-10-10 Lam Research Corporation 基板縁部からの処理調整ガスの注入
US20080236497A1 (en) 2007-03-30 2008-10-02 Tokyo Electon Limited Method and system for improving deposition uniformity in a vapor deposition system

Also Published As

Publication number Publication date
JP2023520035A (ja) 2023-05-15
KR102902661B1 (ko) 2025-12-19
TWI906275B (zh) 2025-12-01
WO2021202080A1 (en) 2021-10-07
CN115362544A (zh) 2022-11-18
KR20220160687A (ko) 2022-12-06
US20230128551A1 (en) 2023-04-27
TW202204686A (zh) 2022-02-01

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