KR102902661B1 - 튜닝 가스의 국부화된 (localized) 전달을 위한 에지 링 - Google Patents

튜닝 가스의 국부화된 (localized) 전달을 위한 에지 링

Info

Publication number
KR102902661B1
KR102902661B1 KR1020227038261A KR20227038261A KR102902661B1 KR 102902661 B1 KR102902661 B1 KR 102902661B1 KR 1020227038261 A KR1020227038261 A KR 1020227038261A KR 20227038261 A KR20227038261 A KR 20227038261A KR 102902661 B1 KR102902661 B1 KR 102902661B1
Authority
KR
South Korea
Prior art keywords
gases
substrate
edge ring
paragraph
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227038261A
Other languages
English (en)
Korean (ko)
Other versions
KR20220160687A (ko
Inventor
요한 시퍼새드
라이언 비즈
존 홀랜드
레오니드 벨라우
아담 크리스토퍼 메이스
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20220160687A publication Critical patent/KR20220160687A/ko
Application granted granted Critical
Publication of KR102902661B1 publication Critical patent/KR102902661B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/68735—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020227038261A 2020-04-02 2021-03-12 튜닝 가스의 국부화된 (localized) 전달을 위한 에지 링 Active KR102902661B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063004132P 2020-04-02 2020-04-02
US63/004,132 2020-04-02
US202063041694P 2020-06-19 2020-06-19
US63/041,694 2020-06-19
PCT/US2021/022036 WO2021202080A1 (en) 2020-04-02 2021-03-12 Edge ring for localized delivery of tuning gas

Publications (2)

Publication Number Publication Date
KR20220160687A KR20220160687A (ko) 2022-12-06
KR102902661B1 true KR102902661B1 (ko) 2025-12-19

Family

ID=77929392

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227038261A Active KR102902661B1 (ko) 2020-04-02 2021-03-12 튜닝 가스의 국부화된 (localized) 전달을 위한 에지 링

Country Status (6)

Country Link
US (1) US20230128551A1 (https=)
JP (1) JP7668814B2 (https=)
KR (1) KR102902661B1 (https=)
CN (1) CN115362544A (https=)
TW (1) TWI906275B (https=)
WO (1) WO2021202080A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115558905B (zh) * 2022-12-01 2023-07-07 浙江晶越半导体有限公司 一种提高碳化硅沉积速率与均匀性的方法与反应器
US20240304486A1 (en) * 2023-03-10 2024-09-12 Applied Materials, Inc. Differential substrate backside cooling
US20250121348A1 (en) * 2023-10-12 2025-04-17 Cristina Piekarz Modular regenerative hydrothermal reactor and methods for mineralization of recalcitrant organic compounds at hydrothermal operating conditions
CN120221381B (zh) * 2025-05-26 2025-07-25 上海邦芯半导体科技有限公司 边缘保护环及深硅刻蚀设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004200353A (ja) 2002-12-18 2004-07-15 Tokyo Electron Ltd 処理方法及び処理装置
US20080236497A1 (en) 2007-03-30 2008-10-02 Tokyo Electon Limited Method and system for improving deposition uniformity in a vapor deposition system
JP2013211586A (ja) 2006-02-21 2013-10-10 Lam Research Corporation 基板縁部からの処理調整ガスの注入

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US6780759B2 (en) * 2001-05-09 2004-08-24 Silicon Genesis Corporation Method for multi-frequency bonding
US7658816B2 (en) * 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
US20050196971A1 (en) * 2004-03-05 2005-09-08 Applied Materials, Inc. Hardware development to reduce bevel deposition
CN101552182B (zh) * 2008-03-31 2010-11-03 北京北方微电子基地设备工艺研究中心有限责任公司 一种用于半导体制造工艺中的边缘环机构
JP4591590B2 (ja) * 2008-10-31 2010-12-01 三菱電機株式会社 粒子線照射装置及び粒子線治療装置
US20130168352A1 (en) * 2011-12-28 2013-07-04 Andreas Fischer Methods and apparatuses for controlling plasma properties by controlling conductance between sub-chambers of a plasma processing chamber
US10410832B2 (en) * 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
KR102641441B1 (ko) * 2016-09-28 2024-02-29 삼성전자주식회사 링 어셈블리 및 이를 포함하는 척 어셈블리

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004200353A (ja) 2002-12-18 2004-07-15 Tokyo Electron Ltd 処理方法及び処理装置
JP2013211586A (ja) 2006-02-21 2013-10-10 Lam Research Corporation 基板縁部からの処理調整ガスの注入
US20080236497A1 (en) 2007-03-30 2008-10-02 Tokyo Electon Limited Method and system for improving deposition uniformity in a vapor deposition system

Also Published As

Publication number Publication date
JP2023520035A (ja) 2023-05-15
TWI906275B (zh) 2025-12-01
WO2021202080A1 (en) 2021-10-07
CN115362544A (zh) 2022-11-18
KR20220160687A (ko) 2022-12-06
JP7668814B2 (ja) 2025-04-25
US20230128551A1 (en) 2023-04-27
TW202204686A (zh) 2022-02-01

Similar Documents

Publication Publication Date Title
US20260081117A1 (en) Tapered upper electrode for uniformity control in plasma processing
US11127567B2 (en) Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
KR102902661B1 (ko) 튜닝 가스의 국부화된 (localized) 전달을 위한 에지 링
KR102521717B1 (ko) 아킹 (arcing) 을 감소시키기 위한 헬륨 플러그 설계
KR102800602B1 (ko) 연장된 수명을 갖는 한정 링
JP7698094B2 (ja) 基板処理システムにおける中間リング腐食補償
US20190341275A1 (en) Edge ring focused deposition during a cleaning process of a processing chamber
KR20250033324A (ko) 웨이퍼 베벨/에지 상의 증착을 제어하기 위한 캐리어 링 설계들
US20230369091A1 (en) High temperature pedestal with extended electrostatic chuck electrode
US20250323086A1 (en) Improved pedestals for substrate processing systems
US20250140530A1 (en) In-situ back side plasma treatment for residue removal from substrates
KR102916789B1 (ko) 기판 프로세싱 시스템들을 위한 감소된 직경 캐리어 링 하드웨어
US12542259B2 (en) Plasma-exclusion-zone rings for processing notched wafers
KR102889276B1 (ko) 플라즈마 챔버들을 세정하기 위한 장치
US12394603B2 (en) Multizone gas distribution plate for trench profile optimization
US20230167552A1 (en) Showerhead designs for controlling deposition on wafer bevel/edge

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13 Application amended

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

U12 Designation fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U12-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000