TWI906275B - 用於調節氣體之局部輸送的邊緣環 - Google Patents

用於調節氣體之局部輸送的邊緣環

Info

Publication number
TWI906275B
TWI906275B TW110111530A TW110111530A TWI906275B TW I906275 B TWI906275 B TW I906275B TW 110111530 A TW110111530 A TW 110111530A TW 110111530 A TW110111530 A TW 110111530A TW I906275 B TWI906275 B TW I906275B
Authority
TW
Taiwan
Prior art keywords
gases
substrate
gas
edge ring
substrate processing
Prior art date
Application number
TW110111530A
Other languages
English (en)
Chinese (zh)
Other versions
TW202204686A (zh
Inventor
優和 西珀薩德
萊恩 白斯
約翰 霍藍德
列昂尼德 貝勞
亞當 克利斯多夫 麥斯
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202204686A publication Critical patent/TW202204686A/zh
Application granted granted Critical
Publication of TWI906275B publication Critical patent/TWI906275B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW110111530A 2020-04-02 2021-03-30 用於調節氣體之局部輸送的邊緣環 TWI906275B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202063004132P 2020-04-02 2020-04-02
US63/004,132 2020-04-02
US202063041694P 2020-06-19 2020-06-19
US63/041,694 2020-06-19

Publications (2)

Publication Number Publication Date
TW202204686A TW202204686A (zh) 2022-02-01
TWI906275B true TWI906275B (zh) 2025-12-01

Family

ID=77929392

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110111530A TWI906275B (zh) 2020-04-02 2021-03-30 用於調節氣體之局部輸送的邊緣環

Country Status (6)

Country Link
US (1) US20230128551A1 (https=)
JP (1) JP7668814B2 (https=)
KR (1) KR102902661B1 (https=)
CN (1) CN115362544A (https=)
TW (1) TWI906275B (https=)
WO (1) WO2021202080A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115558905B (zh) * 2022-12-01 2023-07-07 浙江晶越半导体有限公司 一种提高碳化硅沉积速率与均匀性的方法与反应器
US20240304486A1 (en) * 2023-03-10 2024-09-12 Applied Materials, Inc. Differential substrate backside cooling
US20250121348A1 (en) * 2023-10-12 2025-04-17 Cristina Piekarz Modular regenerative hydrothermal reactor and methods for mineralization of recalcitrant organic compounds at hydrothermal operating conditions
CN120221381B (zh) * 2025-05-26 2025-07-25 上海邦芯半导体科技有限公司 边缘保护环及深硅刻蚀设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI275124B (en) * 2004-03-05 2007-03-01 Applied Materials Inc Hardware development to reduce bevel deposition
US20080236497A1 (en) * 2007-03-30 2008-10-02 Tokyo Electon Limited Method and system for improving deposition uniformity in a vapor deposition system
CN101552182B (zh) * 2008-03-31 2010-11-03 北京北方微电子基地设备工艺研究中心有限责任公司 一种用于半导体制造工艺中的边缘环机构
TWI364791B (en) * 2006-02-21 2012-05-21 Lam Res Corp Gas injection from the substrate edge

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Publication number Priority date Publication date Assignee Title
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US6780759B2 (en) * 2001-05-09 2004-08-24 Silicon Genesis Corporation Method for multi-frequency bonding
JP4108465B2 (ja) * 2002-12-18 2008-06-25 東京エレクトロン株式会社 処理方法及び処理装置
US7658816B2 (en) * 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
JP4591590B2 (ja) * 2008-10-31 2010-12-01 三菱電機株式会社 粒子線照射装置及び粒子線治療装置
US20130168352A1 (en) * 2011-12-28 2013-07-04 Andreas Fischer Methods and apparatuses for controlling plasma properties by controlling conductance between sub-chambers of a plasma processing chamber
US10410832B2 (en) * 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
KR102641441B1 (ko) * 2016-09-28 2024-02-29 삼성전자주식회사 링 어셈블리 및 이를 포함하는 척 어셈블리

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI275124B (en) * 2004-03-05 2007-03-01 Applied Materials Inc Hardware development to reduce bevel deposition
TWI364791B (en) * 2006-02-21 2012-05-21 Lam Res Corp Gas injection from the substrate edge
US20080236497A1 (en) * 2007-03-30 2008-10-02 Tokyo Electon Limited Method and system for improving deposition uniformity in a vapor deposition system
CN101552182B (zh) * 2008-03-31 2010-11-03 北京北方微电子基地设备工艺研究中心有限责任公司 一种用于半导体制造工艺中的边缘环机构

Also Published As

Publication number Publication date
JP2023520035A (ja) 2023-05-15
KR102902661B1 (ko) 2025-12-19
WO2021202080A1 (en) 2021-10-07
CN115362544A (zh) 2022-11-18
KR20220160687A (ko) 2022-12-06
JP7668814B2 (ja) 2025-04-25
US20230128551A1 (en) 2023-04-27
TW202204686A (zh) 2022-02-01

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