JP2023516427A - 放射放出半導体本体、および放射放出半導体本体を製造するための方法 - Google Patents
放射放出半導体本体、および放射放出半導体本体を製造するための方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
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- 230000007704 transition Effects 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims 1
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- 229910052751 metal Inorganic materials 0.000 description 4
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
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- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
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Abstract
Description
2 第1の半導体領域
3 第2の半導体領域
4 活性領域
5 縁部領域
6 中央領域
7 移行領域
8 バリア層
9 中間層
10 さらなる中間層
11 マスク
12 基板
13 第1のドーピング材料
14 第2のドーピング材料
15 終端層
16 放射放出半導体チップ
17 第1のコンタクト層
18 第2のコンタクト層
19 支持体
Claims (16)
- 放射放出半導体本体(1)であって、
当該放射放出半導体本体(1)は、
第1の導電型の第1の半導体領域(2)、
第2の導電型の第2の半導体領域(3)、および
前記第1の半導体領域(2)と前記第2の半導体領域(3)との間の活性領域(4)
を有し、
前記活性領域は、InGaAlPを含み、
前記第1の導電型は、n導電型に形成されており、前記第2の導電型は、p導電型に形成されており、
前記半導体本体(1)の縁部領域(5)における前記活性領域(4)は、前記半導体本体(1)の中央領域(6)よりも大きなバンドギャップを有し、
前記第2の半導体領域(3)のバンドギャップは、前記縁部領域(5)と前記中央領域(6)とにおいて同じである、
放射放出半導体本体(1)。 - 前記縁部領域(5)における前記活性領域(4)は、第1のドーピング材料(13)を含み、
前記縁部領域(5)と前記中央領域(6)との間の前記半導体本体(1)の移行領域(7)における前記第1のドーピング材料(13)の密度は、横方向において連続的に減少し、
前記移行領域(7)の幅は、最大でも前記活性領域(4)の厚さと同じ大きさである、
請求項1記載の放射放出半導体本体(1)。 - 前記中央領域(6)における前記活性領域(4)は、前記第1のドーピング材料(13)を含まない、
請求項2記載の放射放出半導体本体(1)。 - 前記第1のドーピング材料(13)は、p型ドーピング材料を含む、
請求項1から3までのいずれか1項記載の放射放出半導体本体(1)。 - 前記第2の半導体領域(3)は、第2のドーピング材料(14)を含む、
請求項1から4までのいずれか1項記載の放射放出半導体本体(1)。 - 前記第2のドーピング材料(14)と前記第1のドーピング材料(13)とは、同じである、
請求項5記載の放射放出半導体本体(1)。 - 前記第2の半導体領域(3)は、前記第1のドーピング材料(13)を含まない、
請求項1から5までのいずれか1項記載の放射放出半導体本体(1)。 - 前記活性領域(4)は、前記第2のドーピング材料(14)を含まない、
請求項7記載の放射放出半導体本体(1)。 - 前記縁部領域(5)における前記活性領域(4)のバンドギャップは、前記中央領域(6)よりも少なくとも50meV~最大で150meVだけ大きい、
請求項1から8までのいずれか1項記載の放射放出半導体本体(1)。 - 放射放出半導体チップであって、
当該放射放出半導体チップは、
請求項1から9までのいずれか1項記載の放射放出半導体本体(1)、
第1の半導体領域(2)上に配置された第1のコンタクト層、および
第2の半導体領域(3)上に配置された第2のコンタクト層
を有する、放射放出半導体チップ。 - 前記第2のコンタクト層は、支持体上に配置されている、
請求項10記載の放射放出半導体チップ。 - 放射放出半導体本体(1)を製造するための方法であって、
当該方法は、
第1の導電型を有する第1の半導体領域(2)を提供するステップであって、前記第1の導電型は、n導電型に形成されており、かつ第2の導電型は、p導電型に形成されている、ステップと、
前記第1の半導体領域(2)上に活性領域(4)を被着させるステップであって、前記活性領域は、InGaAlPを含む、ステップと、
製造されるべき前記半導体本体(1)の縁部領域(5)における前記活性領域(4)のバンドギャップを拡大させるステップと、
前記第2の導電型を有する第2の半導体領域(3)を被着させるステップと
を有する、方法。 - 前記活性領域のバンドギャップを拡大させるためにドーピングが実施され、
前記活性領域(4)のドーピング時に、前記縁部領域(5)における前記活性領域(4)に第1のドーピング材料(13)が導入される、
請求項12記載の方法。 - 前記活性領域(4)のドーピング前に、前記縁部領域(5)がマスクを含まないように、前記活性領域(4)上にマスク(11)が被着される、
請求項13記載の方法。 - 前記第2の半導体領域(3)の被着前に、前記マスク(11)が除去される、
請求項14記載の方法。 - 前記第2の半導体領域(3)は、被着時に第2のドーピング材料(14)によってドーピングされる、
請求項12から15までのいずれか1項記載の方法。
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DE102020106113.7A DE102020106113A1 (de) | 2020-03-06 | 2020-03-06 | Strahlungsemittierender halbleiterkörper, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterkörpers |
DE102020106113.7 | 2020-03-06 | ||
PCT/EP2021/054312 WO2021175635A1 (de) | 2020-03-06 | 2021-02-22 | Strahlungsemittierender halbleiterkörper und dessen verfahren zur herstellung |
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JP (1) | JP2023516427A (ja) |
KR (1) | KR20220137741A (ja) |
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US5708674A (en) | 1995-01-03 | 1998-01-13 | Xerox Corporation | Semiconductor laser or array formed by layer intermixing |
DE102010026518A1 (de) * | 2010-07-08 | 2012-01-12 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips |
US9484492B2 (en) * | 2015-01-06 | 2016-11-01 | Apple Inc. | LED structures for reduced non-radiative sidewall recombination |
US20170213934A1 (en) * | 2016-01-25 | 2017-07-27 | Google Inc. | High-efficiency light emitting diode |
US10396241B1 (en) | 2016-08-04 | 2019-08-27 | Apple Inc. | Diffusion revealed blocking junction |
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KR20220137741A (ko) | 2022-10-12 |
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