JP2023514542A - 統合された窒化アルミニウムシード又は導波層を備えたsnspd - Google Patents
統合された窒化アルミニウムシード又は導波層を備えたsnspd Download PDFInfo
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 150000004767 nitrides Chemical class 0.000 claims abstract description 34
- 230000003287 optical effect Effects 0.000 claims abstract description 25
- 239000002070 nanowire Substances 0.000 claims abstract description 22
- 230000001902 propagating effect Effects 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 40
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 106
- 238000000034 method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 229910001275 Niobium-titanium Inorganic materials 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- RJSRQTFBFAJJIL-UHFFFAOYSA-N niobium titanium Chemical compound [Ti].[Nb] RJSRQTFBFAJJIL-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910004541 SiN Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- -1 niobium nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000001161 time-correlated single photon counting Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/84—Switching means for devices switchable between superconducting and normal states
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4413—Type
- G01J2001/442—Single-photon detection or photon counting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0241—Manufacture or treatment of devices comprising nitrides or carbonitrides
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Optical Integrated Circuits (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
Claims (17)
- 超電導ナノワイヤ単一光子検出器(SNSPD)デバイスであって:
頂面を有する基板と;
前記基板の前記頂面に実質的に平行に伝播する光を受容するための、前記基板の前記頂面上の光導波路と;
前記光導波路上の窒化アルミニウムのシード層と;
前記シード層上の、少なくとも9.7Kの臨界温度を有し、前記光導波路に光学的に結合されている、窒化ニオブである超電導線材と
を含む、デバイス。 - 前記基板と前記光導波路との間に第1の屈折率を有する第1の材料の誘電体層を含み、前記光導波路は、前記第1の屈折率より大きい第2の屈折率を有する第2の材料から形成されている、請求項1に記載のデバイス。
- 前記第1の材料が酸化ケイ素(SiO2)である、請求項2に記載のデバイス。
- 前記第2の材料が窒化ケイ素(Si3N4)である、請求項2に記載のデバイス。
- 前記金属窒化物層がδ相NbNを含む、請求項1に記載のデバイス。
- 複数のワイヤ上にキャッピング層をさらに含む、請求項1に記載のデバイス。
- 前記超電導線材が複数のワイヤ部分を含み、前記複数のワイヤ部分を分離するトレンチが前記キャッピング層を貫通している、請求項6に記載のデバイス。
- 前記シード層が、4~50nmの厚さを有する、請求項1に記載のデバイス。
- 前記超電導線材が、4~50nmの厚さを有する、請求項1に記載のデバイス。
- 前記超電導線材が複数のワイヤ部分を含み、前記複数のワイヤ部分を分離するトレンチが光学反射鏡内に延在していない、請求項1に記載のデバイス。
- 前記トレンチが前記シード層内に延在している、請求項10に記載のデバイス。
- 超電導ナノワイヤ単一光子検出器(SNSPD)デバイスであって:
頂面を有する基板と;
前記基板の前記頂面に実質的に平行に伝播する光を受容するための、前記基板の前記頂面上の窒化アルミニウム光導波路と;
前記光導波路上の、少なくとも9.7Kの臨界温度を有する窒化ニオブである超電導線材と
を含む、デバイス。 - 前記光導波路が400~500nmの厚さを有する、請求項12に記載のデバイス。
- 前記光導波路が1.1~1.3μmの幅を有する、請求項12に記載のデバイス。
- 前記光導波路の前記窒化アルミニウムの第2の屈折率よりも小さい第1の屈折率を有する第1の材料の誘電体層を含む、請求項12に記載のデバイス。
- 前記第1の材料が酸化ケイ素(SiO2)である、請求項15に記載のデバイス。
- 前記超電導線材が前記光導波路に直接接触している、請求項12に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202062969637P | 2020-02-03 | 2020-02-03 | |
US62/969,637 | 2020-02-03 | ||
PCT/US2021/015807 WO2021188211A2 (en) | 2020-02-03 | 2021-01-29 | Snspd with integrated aluminum nitride seed or waveguide layer |
Publications (1)
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JP2023514542A true JP2023514542A (ja) | 2023-04-06 |
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JP2022547194A Pending JP2023514542A (ja) | 2020-02-03 | 2021-01-29 | 統合された窒化アルミニウムシード又は導波層を備えたsnspd |
Country Status (5)
Country | Link |
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US (2) | US11653576B2 (ja) |
EP (1) | EP4100706A4 (ja) |
JP (1) | JP2023514542A (ja) |
TW (1) | TWI780579B (ja) |
WO (1) | WO2021188211A2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI753759B (zh) | 2020-02-03 | 2022-01-21 | 美商應用材料股份有限公司 | 具有整合化氮化鋁種晶或波導層的超導奈米線單光子偵測器 |
CN114530509B (zh) * | 2022-01-24 | 2024-01-30 | 西安理工大学 | 具有中红外高光吸收特性的超导纳米线单光子探测器 |
US20240125646A1 (en) * | 2022-10-14 | 2024-04-18 | Hermes-Epitek Corporation | Single-photon detector, single-photon detector array, and method for forming the same |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4746373A (en) * | 1985-05-16 | 1988-05-24 | Kabushiki Kaisha Toshiba | Method of manufacturing compound superconductors |
US4726890A (en) | 1985-08-12 | 1988-02-23 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of producing high Tc superconducting NbN films |
JPH0711438A (ja) | 1993-06-29 | 1995-01-13 | Nec Corp | 基板温度を制御する成膜方法及びその装置 |
US6328858B1 (en) | 1998-10-01 | 2001-12-11 | Nexx Systems Packaging, Llc | Multi-layer sputter deposition apparatus |
US6475902B1 (en) | 2000-03-10 | 2002-11-05 | Applied Materials, Inc. | Chemical vapor deposition of niobium barriers for copper metallization |
US7563715B2 (en) | 2005-12-05 | 2009-07-21 | Asm International N.V. | Method of producing thin films |
US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
US6994910B2 (en) | 2003-01-09 | 2006-02-07 | Guardian Industries Corp. | Heat treatable coated article with niobium nitride IR reflecting layer |
CA2581626C (en) | 2004-09-27 | 2013-08-13 | Gallium Enterprises Pty Ltd | Method and apparatus for growing a group (iii) metal nitride film and a group (iii) metal nitride film |
US7820020B2 (en) | 2005-02-03 | 2010-10-26 | Applied Materials, Inc. | Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas |
US7432201B2 (en) | 2005-07-19 | 2008-10-07 | Applied Materials, Inc. | Hybrid PVD-CVD system |
US7928471B2 (en) | 2006-12-04 | 2011-04-19 | The United States Of America As Represented By The Secretary Of The Navy | Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor |
WO2011067820A1 (ja) | 2009-12-04 | 2011-06-09 | キヤノンアネルバ株式会社 | スパッタリング装置、及び電子デバイスの製造方法 |
US8329262B2 (en) | 2010-01-05 | 2012-12-11 | Applied Materials, Inc. | Dielectric film formation using inert gas excitation |
JP5395255B2 (ja) | 2010-03-24 | 2014-01-22 | キヤノンアネルバ株式会社 | 電子デバイスの製造方法およびスパッタリング方法 |
JP5632072B2 (ja) | 2011-04-28 | 2014-11-26 | キヤノンアネルバ株式会社 | 成膜装置 |
US8954125B2 (en) | 2011-07-28 | 2015-02-10 | International Business Machines Corporation | Low-loss superconducting devices |
US9726536B2 (en) | 2011-12-23 | 2017-08-08 | Technion Research And Development Foundation Limited | Fiber optical superconducting nanowire single photon detector |
US8682129B2 (en) * | 2012-01-20 | 2014-03-25 | Micron Technology, Inc. | Photonic device and methods of formation |
WO2014026724A1 (en) * | 2012-08-17 | 2014-02-20 | Karlsruher Institut für Technologie | Single chip spectrometer with superconducting single photon detector |
CN103579405B (zh) | 2012-09-10 | 2015-09-30 | 清华大学 | 具有强吸收结构的高速snspd及其制备方法 |
US9500519B2 (en) * | 2012-12-03 | 2016-11-22 | Yale University | Superconducting single photon detector |
CN103500763B (zh) | 2013-10-15 | 2017-03-15 | 苏州晶湛半导体有限公司 | Ⅲ族氮化物半导体器件及其制造方法 |
JP2016072454A (ja) | 2014-09-30 | 2016-05-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
US9945728B2 (en) * | 2015-04-03 | 2018-04-17 | Raytheon Bbn Technologies Corp. | Graphene-based infrared single photon detector |
CN106558632B (zh) | 2015-09-17 | 2018-04-03 | 中国科学院上海微系统与信息技术研究所 | 高偏振消光比超导纳米线单光子探测器 |
CN107488828B (zh) | 2016-06-12 | 2020-01-03 | 北京北方华创微电子装备有限公司 | 形成薄膜的方法以及形成氮化铝薄膜的方法 |
JP6684400B2 (ja) | 2016-10-31 | 2020-04-22 | 国立研究開発法人情報通信研究機構 | 超伝導単一光子検出器 |
WO2018232332A1 (en) * | 2017-06-15 | 2018-12-20 | PsiQuantum Corp. | Niobium-germanium superconducting photon detector |
CN107564990B (zh) | 2017-07-27 | 2019-05-17 | 南京大学 | 一种双带宽的超导纳米线单光子探测器 |
GB201719346D0 (en) * | 2017-11-21 | 2018-01-03 | Univ Oxford Innovation Ltd | Optical methods and devices |
KR102298626B1 (ko) | 2017-12-07 | 2021-09-07 | 한국전자통신연구원 | 광자 검출기 |
WO2019126564A1 (en) * | 2017-12-20 | 2019-06-27 | PsiQuantum Corp. | Complementary metal-oxide semiconductor compatible patterning of superconducting nanowire single-photon detectors |
CN110346040B (zh) * | 2018-04-03 | 2021-06-18 | 中国科学院上海微系统与信息技术研究所 | 宽谱微纳光纤耦合超导纳米线单光子探测器及其制备方法 |
CN108666409A (zh) | 2018-05-10 | 2018-10-16 | 东南大学 | 一种提高超导纳米线吸收效率的结构 |
US10879446B2 (en) * | 2018-08-14 | 2020-12-29 | Intel Corporation | Vertical flux bias lines coupled to vertical squid loops in superconducting qubits |
CN110057446B (zh) | 2019-03-21 | 2021-02-09 | 天津大学 | 一种具有宽光谱范围和大量程范围的光功率计 |
US11009387B2 (en) * | 2019-04-16 | 2021-05-18 | PsiQuantum Corp. | Superconducting nanowire single photon detector and method of fabrication thereof |
CN110635021B (zh) * | 2019-09-16 | 2021-04-09 | 中国科学院上海微系统与信息技术研究所 | 飞秒激光直写波导耦合超导纳米线单光子探测器 |
US11480734B2 (en) * | 2019-09-25 | 2022-10-25 | Nexus Photonics, Inc | Active-passive photonic integrated circuit platform |
TWI753759B (zh) | 2020-02-03 | 2022-01-21 | 美商應用材料股份有限公司 | 具有整合化氮化鋁種晶或波導層的超導奈米線單光子偵測器 |
EP4107794A4 (en) * | 2020-02-21 | 2024-02-28 | Applied Materials Inc | HIGH CRITICAL TEMPERATURE METAL NITRIDE LAYER WITH OXIDE OR OXYNITRIDE SEED LAYER |
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- 2021-01-26 TW TW110102768A patent/TWI780579B/zh active
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US20210242390A1 (en) | 2021-08-05 |
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