JP7440649B2 - 統合された窒化アルミニウムシード又は導波層を備えたsnspd - Google Patents
統合された窒化アルミニウムシード又は導波層を備えたsnspd Download PDFInfo
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 29
- 239000000463 material Substances 0.000 claims description 49
- 150000004767 nitrides Chemical class 0.000 claims description 32
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical group [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- 239000002070 nanowire Substances 0.000 claims description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 7
- 229910001275 Niobium-titanium Inorganic materials 0.000 claims description 6
- RJSRQTFBFAJJIL-UHFFFAOYSA-N niobium titanium Chemical compound [Ti].[Nb] RJSRQTFBFAJJIL-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims 4
- 239000010410 layer Substances 0.000 description 114
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910004541 SiN Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- -1 δ-phase NbN Chemical compound 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000001161 time-correlated single photon counting Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0437—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using masks, aperture plates, spatial light modulators, spatial filters, e.g. reflective filters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0801—Manufacture or treatment of filaments or composite wires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/84—Switching means for devices switchable between superconducting and normal states
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0425—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using optical fibers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0488—Optical or mechanical part supplementary adjustable parts with spectral filtering
- G01J2001/0496—Optical or mechanical part supplementary adjustable parts with spectral filtering using fiber Bragg gratings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4413—Type
- G01J2001/442—Single-photon detection or photon counting
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/208—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices superconductive
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- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
Claims (17)
- 超電導ナノワイヤ単一光子検出器(SNSPD)デバイスであって:
基板と;
前記基板上の分布ブラッグ反射鏡であって、前記分布ブラッグ反射鏡は複数の二重層を含み、各二重層は、第1の材料の下層と、前記第1の材料よりも高い屈折率を有する第2の材料の上層とを含む、前記分布ブラッグ反射鏡と;
前記分布ブラッグ反射鏡の上層の上にあり、当該上層と直接接触する金属窒化物のシード層と;
前記シード層上の、シード材料の前記金属窒化物とは異なる金属窒化物である超電導線材と
を含み、
前記第1の材料が窒化アルミニウムであり、
前記シード層の前記金属窒化物が窒化アルミニウムである、
デバイス。 - 前記第2の材料が、a-Si、TiO2及びNb2O5からなる群から選択される、請求項1に記載のデバイス。
- 前記第2の材料がアモルファスシリコンである、請求項2に記載のデバイス。
- 前記超電導線材の前記金属窒化物が、窒化ニオブ、窒化チタン、又は窒化ニオブチタンである、請求項1に記載のデバイス。
- 前記超電導線材の前記金属窒化物がδ相NbNを含む、請求項4に記載のデバイス。
- 前記超電導線材上にキャッピング層をさらに含む、請求項1に記載のデバイス。
- 前記キャッピング層がアモルファスシリコンである、請求項6に記載のデバイス。
- 前記超電導線材が複数のワイヤ部分を含み、前記複数のワイヤ部分を分離するトレンチが前記キャッピング層を貫通している、請求項6に記載のデバイス。
- 前記超電導線材が複数のワイヤ部分を含み、前記複数のワイヤ部分を分離するトレンチが前記ブラッグ反射鏡内に延在していない、請求項1に記載のデバイス。
- 前記トレンチが前記シード層内に延在していない、請求項9に記載のデバイス。
- 前記トレンチが前記シード層内に延在している、請求項9に記載のデバイス。
- 前記第1の材料が前記シード層の前記金属窒化物である、請求項1に記載のデバイス。
- 前記シード層が前記分布ブラッグ反射鏡と直接接触し、前記超電導線材が前記シード層と直接接触している、請求項1に記載のデバイス。
- 超電導ナノワイヤ単一光子検出器(SNSPD)デバイスであって:
基板と;
前記基板上の分布ブラッグ反射鏡であって、前記分布ブラッグ反射鏡は複数の二重層を含み、各二重層は、窒化アルミニウムの下層と、窒化アルミニウムよりも高い屈折率を有する異なる材料の上層とを含む、前記分布ブラッグ反射鏡と;
前記分布ブラッグ反射鏡の上層の上にあり、当該上層と直接接触する窒化アルミニウムのシード層と;
前記シード層上の、窒化ニオブ、窒化チタン、又は窒化ニオブチタンである超電導線材と
を含む、デバイス。 - 前記シード層が、4~50nmの厚さを有する、請求項14に記載のデバイス。
- 前記超電導線材が4~50nmの厚さを有する、請求項14に記載のデバイス。
- 前記上層の材料が、a-Si、TiO2及びNb2O5からなる群から選択される、請求項14に記載のデバイス。
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US202062969611P | 2020-02-03 | 2020-02-03 | |
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PCT/US2021/015798 WO2021216162A2 (en) | 2020-02-03 | 2021-01-29 | Snspd with integrated aluminum nitride seed or waveguide layer |
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EP (1) | EP4100707A4 (ja) |
JP (2) | JP7440649B2 (ja) |
TW (1) | TWI753759B (ja) |
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TWI780579B (zh) | 2020-02-03 | 2022-10-11 | 美商應用材料股份有限公司 | 具有整合化氮化鋁晶種或波導層的超導奈米線單光子偵測器 |
CN114530509B (zh) * | 2022-01-24 | 2024-01-30 | 西安理工大学 | 具有中红外高光吸收特性的超导纳米线单光子探测器 |
EP4304322A1 (en) * | 2022-07-07 | 2024-01-10 | Technische Universität München | Photon detection |
US20240125646A1 (en) * | 2022-10-14 | 2024-04-18 | Hermes-Epitek Corporation | Single-photon detector, single-photon detector array, and method for forming the same |
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