JP2023512931A - フォトニック集積回路のための構造 - Google Patents

フォトニック集積回路のための構造 Download PDF

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Publication number
JP2023512931A
JP2023512931A JP2022543627A JP2022543627A JP2023512931A JP 2023512931 A JP2023512931 A JP 2023512931A JP 2022543627 A JP2022543627 A JP 2022543627A JP 2022543627 A JP2022543627 A JP 2022543627A JP 2023512931 A JP2023512931 A JP 2023512931A
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Prior art keywords
waveguide
type semiconductor
semiconductor material
substrate
surface area
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JP2022543627A
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English (en)
Japanese (ja)
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JP2023512931A5 (cg-RX-API-DMAC7.html
Inventor
アルバレス ドス サントス，ルイ マニュエル レモス
エヴァラード フィリップス クライン，スティーブン
ヨハネス アドリアヌス タイス，ペトリュス
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スマート フォトニクス ホールディングス ビー．ブイ．
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Publication of JP2023512931A publication Critical patent/JP2023512931A/ja
Publication of JP2023512931A5 publication Critical patent/JP2023512931A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12078—Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12123—Diode
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/1213—Constructional arrangements comprising photonic band-gap structures or photonic lattices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12159—Interferometer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
JP2022543627A 2020-01-31 2021-01-29 フォトニック集積回路のための構造 Pending JP2023512931A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB2001404.9 2020-01-31
GB2001404.9A GB2592906B (en) 2020-01-31 2020-01-31 Structure for a photonic integrated circuit
PCT/EP2021/052198 WO2021152143A1 (en) 2020-01-31 2021-01-29 Structure for a photonic integrated circuit

Publications (2)

Publication Number Publication Date
JP2023512931A true JP2023512931A (ja) 2023-03-30
JP2023512931A5 JP2023512931A5 (cg-RX-API-DMAC7.html) 2024-02-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022543627A Pending JP2023512931A (ja) 2020-01-31 2021-01-29 フォトニック集積回路のための構造

Country Status (6)

Country Link
US (1) US12546936B2 (cg-RX-API-DMAC7.html)
EP (1) EP4097517B1 (cg-RX-API-DMAC7.html)
JP (1) JP2023512931A (cg-RX-API-DMAC7.html)
CN (1) CN115053159A (cg-RX-API-DMAC7.html)
GB (1) GB2592906B (cg-RX-API-DMAC7.html)
WO (1) WO2021152143A1 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB202212686D0 (en) * 2022-08-31 2022-10-12 Smart Photonics Holding B V Method of providing a wafer
GB2638384A (en) * 2024-01-12 2025-08-27 Smart Photonics Holding B V Part of photonic integrated circuit and method of manufacturing same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003264334A (ja) * 2002-03-08 2003-09-19 Hitachi Ltd 半導体レーザ素子及び半導体レーザモジュール
JP2009027049A (ja) * 2007-07-23 2009-02-05 Sumitomo Electric Ind Ltd 受光デバイス
JP2015122440A (ja) * 2013-12-24 2015-07-02 富士通株式会社 光半導体装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6771682B2 (en) * 2002-08-12 2004-08-03 Infinera Corporation Electrical isolation of optical components in photonic integrated circuits (PICs)
US20100310256A1 (en) * 2007-02-27 2010-12-09 Celight, Inc. Parallel optical receiver for optical systems
US8269297B2 (en) * 2009-12-23 2012-09-18 Infinera Corporation Photodiode isolation in a photonic integrated circuit
US8948227B2 (en) * 2013-01-11 2015-02-03 Source Photonics, Inc. Isolated modulator electrodes for low power consumption
CN108351467B (zh) * 2015-07-22 2020-10-30 Bb光电公司 具有介质波导的化合物半导体光子集成电路
KR20180085221A (ko) * 2017-01-18 2018-07-26 엘지이노텍 주식회사 반도체 소자 및 이를 포함하는 광 모듈
CN113176676B (zh) * 2021-04-16 2022-11-15 上海曦智科技有限公司 光学调制器和光学集成系统

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003264334A (ja) * 2002-03-08 2003-09-19 Hitachi Ltd 半導体レーザ素子及び半導体レーザモジュール
JP2009027049A (ja) * 2007-07-23 2009-02-05 Sumitomo Electric Ind Ltd 受光デバイス
JP2015122440A (ja) * 2013-12-24 2015-07-02 富士通株式会社 光半導体装置及びその製造方法

Also Published As

Publication number Publication date
GB202001404D0 (en) 2020-03-18
GB2592906A (en) 2021-09-15
CN115053159A (zh) 2022-09-13
US12546936B2 (en) 2026-02-10
WO2021152143A1 (en) 2021-08-05
EP4097517A1 (en) 2022-12-07
US20220365276A1 (en) 2022-11-17
EP4097517B1 (en) 2024-03-06
GB2592906B (en) 2024-01-10

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