JP2023507820A - マイクロｌｅｄの転写方法およびマイクロｌｅｄの転写装置 - Google Patents

マイクロｌｅｄの転写方法およびマイクロｌｅｄの転写装置 Download PDF

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Publication number
JP2023507820A
JP2023507820A JP2022538374A JP2022538374A JP2023507820A JP 2023507820 A JP2023507820 A JP 2023507820A JP 2022538374 A JP2022538374 A JP 2022538374A JP 2022538374 A JP2022538374 A JP 2022538374A JP 2023507820 A JP2023507820 A JP 2023507820A
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Japan
Prior art keywords
micro
carrier substrate
substrate
adhesive
transferring
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Pending
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JP2022538374A
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English (en)
Japanese (ja)
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JP2023507820A5 (https=
Inventor
イク・キュ・ユ
ジュン・ジェ・イ
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Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Priority claimed from US17/122,995 external-priority patent/US11521887B2/en
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of JP2023507820A publication Critical patent/JP2023507820A/ja
Publication of JP2023507820A5 publication Critical patent/JP2023507820A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2022538374A 2019-12-18 2020-12-16 マイクロｌｅｄの転写方法およびマイクロｌｅｄの転写装置 Pending JP2023507820A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962949701P 2019-12-18 2019-12-18
US62/949,701 2019-12-18
US17/122,995 2020-12-15
US17/122,995 US11521887B2 (en) 2019-12-18 2020-12-15 Method of transferring micro LED and micro LED transferring apparatus
PCT/KR2020/018414 WO2021125775A1 (ko) 2019-12-18 2020-12-16 마이크로 엘이디 전사 방법 및 마이크로 엘이디 전사 장치

Publications (2)

Publication Number Publication Date
JP2023507820A true JP2023507820A (ja) 2023-02-27
JP2023507820A5 JP2023507820A5 (https=) 2023-12-22

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JP2022538374A Pending JP2023507820A (ja) 2019-12-18 2020-12-16 マイクロｌｅｄの転写方法およびマイクロｌｅｄの転写装置

Country Status (4)

Country Link
EP (1) EP4080550A4 (https=)
JP (1) JP2023507820A (https=)
KR (1) KR20220116182A (https=)
CN (2) CN114902387A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024203435A1 (ja) * 2023-03-29 2024-10-03 東レ株式会社 転写用積層体の製造方法、転写用積層体および半導体装置の製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113764546A (zh) * 2021-08-30 2021-12-07 东莞市中麒光电技术有限公司 一种Mini-LED器件、LED显示模块及其制作方法
CN115763644A (zh) * 2022-11-17 2023-03-07 闻泰通讯股份有限公司 芯片转移方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018517298A (ja) * 2015-11-04 2018-06-28 ゴルテック インコーポレイテッド マイクロ発光ダイオードの搬送方法、製造方法、装置及び電子機器
JP2019015899A (ja) * 2017-07-10 2019-01-31 株式会社ブイ・テクノロジー 表示装置の製造方法、チップ部品の転写方法、および転写部材
JP2019114660A (ja) * 2017-12-22 2019-07-11 東レエンジニアリング株式会社 実装方法および実装装置

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EP2780954B1 (en) * 2011-11-18 2019-10-16 Apple Inc. Method of forming a micro led structure
CN105493297B (zh) * 2015-05-21 2018-09-11 歌尔股份有限公司 微发光二极管的转移方法、制造方法、装置和电子设备
US10141287B2 (en) * 2015-07-14 2018-11-27 Goertek, Inc. Transferring method, manufacturing method, device and electronic apparatus of micro-LED
WO2017028207A1 (en) * 2015-08-18 2017-02-23 Goertek.Inc Pre-screening method, manufacturing method, device and electronic apparatus of micro-led
US10325893B2 (en) * 2016-12-13 2019-06-18 Hong Kong Beida Jade Bird Display Limited Mass transfer of micro structures using adhesives
KR20180075310A (ko) * 2016-12-26 2018-07-04 주식회사 엘지화학 마이크로 전기 소자의 전사 방법
TWI648871B (zh) * 2017-09-22 2019-01-21 台灣愛司帝科技股份有限公司 發光模組的製作方法
CN108962789A (zh) * 2018-06-25 2018-12-07 开发晶照明（厦门）有限公司 微器件转移方法和微器件转移设备

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018517298A (ja) * 2015-11-04 2018-06-28 ゴルテック インコーポレイテッド マイクロ発光ダイオードの搬送方法、製造方法、装置及び電子機器
JP2019015899A (ja) * 2017-07-10 2019-01-31 株式会社ブイ・テクノロジー 表示装置の製造方法、チップ部品の転写方法、および転写部材
JP2019114660A (ja) * 2017-12-22 2019-07-11 東レエンジニアリング株式会社 実装方法および実装装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024203435A1 (ja) * 2023-03-29 2024-10-03 東レ株式会社 転写用積層体の製造方法、転写用積層体および半導体装置の製造方法

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Publication number Publication date
KR20220116182A (ko) 2022-08-22
EP4080550A4 (en) 2024-01-03
CN114902387A (zh) 2022-08-12
CN213424968U (zh) 2021-06-11
EP4080550A1 (en) 2022-10-26

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