CN114902387A - 微型led转印方法及微型led转印装置 - Google Patents

微型led转印方法及微型led转印装置 Download PDF

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Publication number
CN114902387A
CN114902387A CN202080089878.0A CN202080089878A CN114902387A CN 114902387 A CN114902387 A CN 114902387A CN 202080089878 A CN202080089878 A CN 202080089878A CN 114902387 A CN114902387 A CN 114902387A
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CN
China
Prior art keywords
micro
substrate
carrier substrate
micro led
leds
Prior art date
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Withdrawn
Application number
CN202080089878.0A
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English (en)
Chinese (zh)
Inventor
刘益圭
李正宰
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Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Filing date
Publication date
Priority claimed from US17/122,995 external-priority patent/US11521887B2/en
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of CN114902387A publication Critical patent/CN114902387A/zh
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN202080089878.0A 2019-12-18 2020-12-16 微型led转印方法及微型led转印装置 Withdrawn CN114902387A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962949701P 2019-12-18 2019-12-18
US62/949,701 2019-12-18
US17/122,995 2020-12-15
US17/122,995 US11521887B2 (en) 2019-12-18 2020-12-15 Method of transferring micro LED and micro LED transferring apparatus
PCT/KR2020/018414 WO2021125775A1 (ko) 2019-12-18 2020-12-16 마이크로 엘이디 전사 방법 및 마이크로 엘이디 전사 장치

Publications (1)

Publication Number Publication Date
CN114902387A true CN114902387A (zh) 2022-08-12

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CN202080089878.0A Withdrawn CN114902387A (zh) 2019-12-18 2020-12-16 微型led转印方法及微型led转印装置
CN202023037750.6U Active CN213424968U (zh) 2019-12-18 2020-12-16 微型led转印装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202023037750.6U Active CN213424968U (zh) 2019-12-18 2020-12-16 微型led转印装置

Country Status (4)

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EP (1) EP4080550A4 (https=)
JP (1) JP2023507820A (https=)
KR (1) KR20220116182A (https=)
CN (2) CN114902387A (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113764546A (zh) * 2021-08-30 2021-12-07 东莞市中麒光电技术有限公司 一种Mini-LED器件、LED显示模块及其制作方法
CN115763644A (zh) * 2022-11-17 2023-03-07 闻泰通讯股份有限公司 芯片转移方法
WO2024203435A1 (ja) * 2023-03-29 2024-10-03 東レ株式会社 転写用積層体の製造方法、転写用積層体および半導体装置の製造方法

Citations (7)

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JP2014533890A (ja) * 2011-11-18 2014-12-15 ルクスビュー テクノロジー コーポレイション 電気的絶縁層を持つマイクロｌｅｄ構造体及びマイクロｌｅｄ構造体のアレイの形成方法
WO2017028207A1 (en) * 2015-08-18 2017-02-23 Goertek.Inc Pre-screening method, manufacturing method, device and electronic apparatus of micro-led
US20170330867A1 (en) * 2015-07-14 2017-11-16 Goertek, Inc. Transferring method, manufacturing method, device and electronic apparatus of micro-led
KR20180075310A (ko) * 2016-12-26 2018-07-04 주식회사 엘지화학 마이크로 전기 소자의 전사 방법
CN108962789A (zh) * 2018-06-25 2018-12-07 开发晶照明（厦门）有限公司 微器件转移方法和微器件转移设备
CN109545938A (zh) * 2017-09-22 2019-03-29 台湾爱司帝科技股份有限公司 发光模块的制作方法
CN110574174A (zh) * 2016-12-13 2019-12-13 香港北大青鸟显示有限公司 使用粘合剂对微结构进行传质

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CN105493297B (zh) * 2015-05-21 2018-09-11 歌尔股份有限公司 微发光二极管的转移方法、制造方法、装置和电子设备
US10181546B2 (en) * 2015-11-04 2019-01-15 Goertek.Inc Transferring method, manufacturing method, device and electronic apparatus of micro-LED
JP2019015899A (ja) * 2017-07-10 2019-01-31 株式会社ブイ・テクノロジー 表示装置の製造方法、チップ部品の転写方法、および転写部材
JP6990577B2 (ja) * 2017-12-22 2022-01-12 東レエンジニアリング株式会社 実装方法および実装装置

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JP2014533890A (ja) * 2011-11-18 2014-12-15 ルクスビュー テクノロジー コーポレイション 電気的絶縁層を持つマイクロｌｅｄ構造体及びマイクロｌｅｄ構造体のアレイの形成方法
US20170330867A1 (en) * 2015-07-14 2017-11-16 Goertek, Inc. Transferring method, manufacturing method, device and electronic apparatus of micro-led
WO2017028207A1 (en) * 2015-08-18 2017-02-23 Goertek.Inc Pre-screening method, manufacturing method, device and electronic apparatus of micro-led
CN110574174A (zh) * 2016-12-13 2019-12-13 香港北大青鸟显示有限公司 使用粘合剂对微结构进行传质
KR20180075310A (ko) * 2016-12-26 2018-07-04 주식회사 엘지화학 마이크로 전기 소자의 전사 방법
CN109545938A (zh) * 2017-09-22 2019-03-29 台湾爱司帝科技股份有限公司 发光模块的制作方法
CN108962789A (zh) * 2018-06-25 2018-12-07 开发晶照明（厦门）有限公司 微器件转移方法和微器件转移设备

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PAUL WILLIAMS, DICKSON LEUNG, DOMINIC MIRANDA: "应用于暂时粘结、基片保护和MOEMS封装的新型材料", 电子工业专用设备, no. 05, 15 May 2005 (2005-05-15) *

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JP2023507820A (ja) 2023-02-27
KR20220116182A (ko) 2022-08-22
EP4080550A4 (en) 2024-01-03
CN213424968U (zh) 2021-06-11
EP4080550A1 (en) 2022-10-26

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Application publication date: 20220812