JP2023088853A5 - - Google Patents
Info
- Publication number
- JP2023088853A5 JP2023088853A5 JP2022185732A JP2022185732A JP2023088853A5 JP 2023088853 A5 JP2023088853 A5 JP 2023088853A5 JP 2022185732 A JP2022185732 A JP 2022185732A JP 2022185732 A JP2022185732 A JP 2022185732A JP 2023088853 A5 JP2023088853 A5 JP 2023088853A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- stop layer
- etch stop
- silicon nitride
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2021-0179567 | 2021-12-15 | ||
| KR1020210179567A KR102939950B1 (ko) | 2021-12-15 | 2021-12-15 | 반도체 장치 및 그 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023088853A JP2023088853A (ja) | 2023-06-27 |
| JP2023088853A5 true JP2023088853A5 (https=) | 2025-11-04 |
Family
ID=86694991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022185732A Pending JP2023088853A (ja) | 2021-12-15 | 2022-11-21 | 半導体装置及びその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12456624B2 (https=) |
| JP (1) | JP2023088853A (https=) |
| KR (1) | KR102939950B1 (https=) |
| CN (1) | CN116264210A (https=) |
| TW (1) | TW202327009A (https=) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5880018A (en) * | 1996-10-07 | 1999-03-09 | Motorola Inc. | Method for manufacturing a low dielectric constant inter-level integrated circuit structure |
| US6268299B1 (en) * | 2000-09-25 | 2001-07-31 | International Business Machines Corporation | Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability |
| US7253524B2 (en) * | 2003-11-25 | 2007-08-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Copper interconnects |
| JP2009059824A (ja) * | 2007-08-30 | 2009-03-19 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
| KR20140028948A (ko) * | 2012-08-31 | 2014-03-10 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 형성 방법 |
| KR102546639B1 (ko) | 2017-11-21 | 2023-06-23 | 삼성전자주식회사 | 반도체 장치 |
| KR102668080B1 (ko) * | 2018-07-24 | 2024-05-22 | 삼성전자주식회사 | 반도체 소자 |
| US11282742B2 (en) * | 2019-10-17 | 2022-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with multi-layer etch stop structure and method for forming the same |
| US11532548B2 (en) * | 2020-02-19 | 2022-12-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Nitrogen plasma treatment for improving interface between etch stop layer and copper interconnect |
| KR102747696B1 (ko) * | 2020-05-28 | 2024-12-30 | 삼성전자주식회사 | 반도체 소자 및 그의 제조 방법 |
| US11437301B2 (en) * | 2020-10-15 | 2022-09-06 | Nxp Usa, Inc. | Device with an etch stop layer and method therefor |
-
2021
- 2021-12-15 KR KR1020210179567A patent/KR102939950B1/ko active Active
-
2022
- 2022-07-05 US US17/857,473 patent/US12456624B2/en active Active
- 2022-09-26 CN CN202211175947.7A patent/CN116264210A/zh active Pending
- 2022-09-26 TW TW111136387A patent/TW202327009A/zh unknown
- 2022-11-21 JP JP2022185732A patent/JP2023088853A/ja active Pending
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