JP2023067790A5 - - Google Patents
Info
- Publication number
- JP2023067790A5 JP2023067790A5 JP2022167881A JP2022167881A JP2023067790A5 JP 2023067790 A5 JP2023067790 A5 JP 2023067790A5 JP 2022167881 A JP2022167881 A JP 2022167881A JP 2022167881 A JP2022167881 A JP 2022167881A JP 2023067790 A5 JP2023067790 A5 JP 2023067790A5
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- conductivity type
- doping level
- forming
- floating pocket
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT102021000027842A IT202100027842A1 (it) | 2021-10-29 | 2021-10-29 | Dispositivo di potenza a semiconduttore con protezione da corto circuito e procedimento per fabbricare un dispositivo di potenza a semiconduttore |
| IT102021000027842 | 2021-10-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023067790A JP2023067790A (ja) | 2023-05-16 |
| JP2023067790A5 true JP2023067790A5 (enExample) | 2025-10-10 |
Family
ID=79164472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022167881A Pending JP2023067790A (ja) | 2021-10-29 | 2022-10-19 | 短絡保護を具備する半導体パワー装置及び半導体パワー装置を製造するプロセス |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230134850A1 (enExample) |
| EP (1) | EP4177960B1 (enExample) |
| JP (1) | JP2023067790A (enExample) |
| CN (2) | CN116072728A (enExample) |
| IT (1) | IT202100027842A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT202100027842A1 (it) * | 2021-10-29 | 2023-04-29 | St Microelectronics Srl | Dispositivo di potenza a semiconduttore con protezione da corto circuito e procedimento per fabbricare un dispositivo di potenza a semiconduttore |
| CN119584613A (zh) * | 2025-02-06 | 2025-03-07 | 华通芯电(南昌)电子科技有限公司 | 一种SiC MOSFET器件及其制备方法 |
| TWI900409B (zh) * | 2025-02-12 | 2025-10-01 | 李羿軒 | 垂直型功率半導體裝置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6573534B1 (en) * | 1995-09-06 | 2003-06-03 | Denso Corporation | Silicon carbide semiconductor device |
| JP4746169B2 (ja) * | 2000-04-28 | 2011-08-10 | 株式会社東芝 | 電力用半導体装置及びその駆動方法 |
| KR101367491B1 (ko) * | 2012-08-08 | 2014-02-26 | 고려대학교 산학협력단 | 단일 ｆｌｉ 구조를 갖는 반도체 소자의 제조 방법 및 그 제조 방법으로 제조된 반도체 소자 |
| JP6381101B2 (ja) * | 2013-12-09 | 2018-08-29 | 富士電機株式会社 | 炭化珪素半導体装置 |
| US11152503B1 (en) * | 2019-11-05 | 2021-10-19 | Semiq Incorporated | Silicon carbide MOSFET with wave-shaped channel regions |
| US20240014255A1 (en) * | 2020-01-03 | 2024-01-11 | Lg Electronics Inc. | Metal-oxide-semiconductor field-effect transistor device, and manufacturing method therefor |
| CN111725318B (zh) * | 2020-06-18 | 2024-04-09 | 湖南国芯半导体科技有限公司 | 一种功率半导体器件的元胞结构及其制作方法 |
| IT202100027842A1 (it) * | 2021-10-29 | 2023-04-29 | St Microelectronics Srl | Dispositivo di potenza a semiconduttore con protezione da corto circuito e procedimento per fabbricare un dispositivo di potenza a semiconduttore |
-
2021
- 2021-10-29 IT IT102021000027842A patent/IT202100027842A1/it unknown
-
2022
- 2022-10-11 US US18/045,784 patent/US20230134850A1/en active Pending
- 2022-10-19 JP JP2022167881A patent/JP2023067790A/ja active Pending
- 2022-10-27 EP EP22204133.7A patent/EP4177960B1/en active Active
- 2022-10-28 CN CN202211335559.0A patent/CN116072728A/zh active Pending
- 2022-10-28 CN CN202222860322.6U patent/CN220341228U/zh active Active
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