JP3078163B2
(ja)
|
1993-10-15 |
2000-08-21 |
キヤノン株式会社 |
リソグラフィ用反射型マスクおよび縮小投影露光装置
|
US6323131B1
(en)
|
1998-06-13 |
2001-11-27 |
Agere Systems Guardian Corp. |
Passivated copper surfaces
|
US6013399A
(en)
|
1998-12-04 |
2000-01-11 |
Advanced Micro Devices, Inc. |
Reworkable EUV mask materials
|
US6562522B1
(en)
|
1999-10-29 |
2003-05-13 |
Intel Corporation |
Photomasking
|
US6583068B2
(en)
|
2001-03-30 |
2003-06-24 |
Intel Corporation |
Enhanced inspection of extreme ultraviolet mask
|
DE10155112B4
(de)
|
2001-11-09 |
2006-02-02 |
Infineon Technologies Ag |
Reflexionsmaske für die EUV-Lithographie und Herstellungsverfahren dafür
|
EP1333323A3
(en)
|
2002-02-01 |
2004-10-06 |
Nikon Corporation |
Self-cleaning reflective optical elements for use in x-ray optical systems, and optical systems and microlithography systems comprising same
|
WO2003085709A1
(en)
|
2002-04-11 |
2003-10-16 |
Hoya Corporation |
Reflection type mask blank and reflection type mask and production methods for them
|
US6835503B2
(en)
|
2002-04-12 |
2004-12-28 |
Micron Technology, Inc. |
Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks
|
US6641899B1
(en)
|
2002-11-05 |
2003-11-04 |
International Business Machines Corporation |
Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same
|
US6908713B2
(en)
|
2003-02-05 |
2005-06-21 |
Intel Corporation |
EUV mask blank defect mitigation
|
JP4099589B2
(ja)
*
|
2004-02-20 |
2008-06-11 |
ソニー株式会社 |
マスクパターン補正方法、露光用マスクおよびマスク製造方法
|
US7407729B2
(en)
|
2004-08-05 |
2008-08-05 |
Infineon Technologies Ag |
EUV magnetic contrast lithography mask and manufacture thereof
|
JPWO2006030627A1
(ja)
|
2004-09-17 |
2008-05-08 |
旭硝子株式会社 |
Euvリソグラフィ用反射型マスクブランクスおよびその製造方法
|
JP2006130375A
(ja)
*
|
2004-11-02 |
2006-05-25 |
Bridgestone Corp |
水素貯蔵及び発生用触媒構造体並びにそれを用いた水素の貯蔵及び発生方法
|
US8575021B2
(en)
|
2004-11-22 |
2013-11-05 |
Intermolecular, Inc. |
Substrate processing including a masking layer
|
US20060222961A1
(en)
*
|
2005-03-31 |
2006-10-05 |
Pei-Yang Yan |
Leaky absorber for extreme ultraviolet mask
|
FR2884965B1
(fr)
|
2005-04-26 |
2007-06-08 |
Commissariat Energie Atomique |
Structure de blanc de masque ajustable pour masque euv a decalage de phase
|
US7432201B2
(en)
|
2005-07-19 |
2008-10-07 |
Applied Materials, Inc. |
Hybrid PVD-CVD system
|
KR20070036519A
(ko)
|
2005-09-29 |
2007-04-03 |
주식회사 하이닉스반도체 |
반사형 마스크
|
JP4652946B2
(ja)
|
2005-10-19 |
2011-03-16 |
Hoya株式会社 |
反射型マスクブランク用基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
|
US20070090084A1
(en)
|
2005-10-20 |
2007-04-26 |
Pei-Yang Yan |
Reclaim method for extreme ultraviolet lithography mask blank and associated products
|
JP4926523B2
(ja)
|
2006-03-31 |
2012-05-09 |
Hoya株式会社 |
反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
|
KR20080001023A
(ko)
|
2006-06-29 |
2008-01-03 |
주식회사 에스앤에스텍 |
극자외선 반사형 블랭크 마스크와 포토마스크 및 그제조방법
|
JP5194888B2
(ja)
|
2007-09-27 |
2013-05-08 |
凸版印刷株式会社 |
反射型フォトマスクブランク及びその製造方法、反射型フォトマスク及びその製造方法並びに半導体素子の製造方法
|
JP5584409B2
(ja)
*
|
2008-02-21 |
2014-09-03 |
キヤノンアネルバ株式会社 |
スパッタリング装置およびその制御方法
|
KR100972863B1
(ko)
|
2008-04-22 |
2010-07-28 |
주식회사 하이닉스반도체 |
극자외선 리소그라피 마스크 및 그 제조 방법
|
KR20110050427A
(ko)
|
2008-07-14 |
2011-05-13 |
아사히 가라스 가부시키가이샤 |
Euv 리소그래피용 반사형 마스크 블랭크 및 euv 리소그래피용 반사형 마스크
|
DE102008042212A1
(de)
|
2008-09-19 |
2010-04-01 |
Carl Zeiss Smt Ag |
Reflektives optisches Element und Verfahren zu seiner Herstellung
|
US8587662B1
(en)
|
2008-11-06 |
2013-11-19 |
Target Brands, Inc. |
Theft trend analysis and response
|
KR101095681B1
(ko)
|
2008-12-26 |
2011-12-19 |
주식회사 하이닉스반도체 |
극자외선 리소그래피를 위한 포토마스크 및 그 제조방법
|
EP2416347B1
(en)
*
|
2009-04-02 |
2018-06-13 |
Toppan Printing Co., Ltd. |
Reflective photomask and reflective photomask blank
|
EP2264460A1
(en)
|
2009-06-18 |
2010-12-22 |
Nxp B.V. |
Device having self-assembled-monolayer
|
JP5766393B2
(ja)
|
2009-07-23 |
2015-08-19 |
株式会社東芝 |
反射型露光用マスクおよび半導体装置の製造方法
|
KR20130007537A
(ko)
*
|
2010-03-02 |
2013-01-18 |
아사히 가라스 가부시키가이샤 |
Euv 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
|
KR101625382B1
(ko)
|
2010-04-29 |
2016-05-30 |
(주)에스앤에스텍 |
극자외선용 반사형 블랭크 마스크, 포토마스크 및 그의 제조방법
|
CN102947759B
(zh)
|
2010-06-15 |
2016-03-02 |
卡尔蔡司Smt有限责任公司 |
用于euv光刻的掩模、euv光刻系统和用于优化掩模的成像的方法
|
US8764995B2
(en)
|
2010-08-17 |
2014-07-01 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof
|
KR20140004057A
(ko)
*
|
2010-08-24 |
2014-01-10 |
아사히 가라스 가부시키가이샤 |
Euv 리소그래피용 반사형 마스크 블랭크
|
CN103210515B
(zh)
|
2010-09-15 |
2015-06-03 |
株式会社理光 |
机电转换器件及其制造方法及液滴排出头和液滴排出设备
|
JP6013720B2
(ja)
|
2010-11-22 |
2016-10-25 |
芝浦メカトロニクス株式会社 |
反射型マスクの製造方法、および反射型マスクの製造装置
|
DE102011075579A1
(de)
*
|
2011-05-10 |
2012-11-15 |
Carl Zeiss Smt Gmbh |
Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Spiegel
|
JP5935804B2
(ja)
*
|
2011-09-01 |
2016-06-15 |
旭硝子株式会社 |
反射型マスクブランク及び反射型マスクブランクの製造方法
|
KR20140099226A
(ko)
|
2011-11-25 |
2014-08-11 |
아사히 가라스 가부시키가이샤 |
Euv 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
|
JP2013120868A
(ja)
|
2011-12-08 |
2013-06-17 |
Dainippon Printing Co Ltd |
反射型マスクブランクス、反射型マスク、および、それらの製造方法
|
US8691476B2
(en)
|
2011-12-16 |
2014-04-08 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
EUV mask and method for forming the same
|
KR20130085774A
(ko)
|
2012-01-20 |
2013-07-30 |
에스케이하이닉스 주식회사 |
Euv 마스크
|
US8877409B2
(en)
*
|
2012-04-20 |
2014-11-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Reflective mask and method of making same
|
US8658333B2
(en)
|
2012-06-04 |
2014-02-25 |
Nanya Technology Corporation |
Reflective mask
|
US8765331B2
(en)
*
|
2012-08-17 |
2014-07-01 |
International Business Machines Corporation |
Reducing edge die reflectivity in extreme ultraviolet lithography
|
US9335206B2
(en)
*
|
2012-08-30 |
2016-05-10 |
Kla-Tencor Corporation |
Wave front aberration metrology of optics of EUV mask inspection system
|
US8932785B2
(en)
|
2012-10-16 |
2015-01-13 |
Advanced Mask Technology Center Gmbh & Co. Kg |
EUV mask set and methods of manufacturing EUV masks and integrated circuits
|
JP6081134B2
(ja)
*
|
2012-10-17 |
2017-02-15 |
株式会社日立製作所 |
垂直磁気記録媒体及び磁気記憶装置
|
US9146458B2
(en)
|
2013-01-09 |
2015-09-29 |
Kabushiki Kaisha Toshiba |
EUV mask
|
US9442387B2
(en)
|
2013-02-01 |
2016-09-13 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Extreme ultraviolet lithography process
|
US9135499B2
(en)
|
2013-03-05 |
2015-09-15 |
Tyco Fire & Security Gmbh |
Predictive theft notification for the prevention of theft
|
US20140254001A1
(en)
|
2013-03-07 |
2014-09-11 |
Globalfoundries Inc. |
Fabry-perot thin absorber for euv reticle and a method of making
|
US9298081B2
(en)
|
2013-03-08 |
2016-03-29 |
Globalfoundries Inc. |
Scattering enhanced thin absorber for EUV reticle and a method of making
|
US9354508B2
(en)
|
2013-03-12 |
2016-05-31 |
Applied Materials, Inc. |
Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
|
US20140272684A1
(en)
*
|
2013-03-12 |
2014-09-18 |
Applied Materials, Inc. |
Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
|
US9310675B2
(en)
|
2013-03-15 |
2016-04-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof
|
US9091947B2
(en)
|
2013-07-19 |
2015-07-28 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Extreme ultraviolet light (EUV) photomasks and fabrication methods thereof
|
US9134604B2
(en)
*
|
2013-08-30 |
2015-09-15 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Extreme ultraviolet (EUV) mask and method of fabricating the EUV mask
|
KR101567057B1
(ko)
|
2013-11-15 |
2015-11-09 |
주식회사 에스앤에스텍 |
극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
|
JP6301127B2
(ja)
|
2013-12-25 |
2018-03-28 |
Hoya株式会社 |
反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
|
US9329597B2
(en)
|
2014-01-17 |
2016-05-03 |
Knightscope, Inc. |
Autonomous data machines and systems
|
US10279488B2
(en)
|
2014-01-17 |
2019-05-07 |
Knightscope, Inc. |
Autonomous data machines and systems
|
US9195132B2
(en)
*
|
2014-01-30 |
2015-11-24 |
Globalfoundries Inc. |
Mask structures and methods of manufacturing
|
US11183375B2
(en)
|
2014-03-31 |
2021-11-23 |
Applied Materials, Inc. |
Deposition system with multi-cathode and method of manufacture thereof
|
KR20160002332A
(ko)
|
2014-06-30 |
2016-01-07 |
주식회사 에스앤에스텍 |
극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
|
US9739913B2
(en)
*
|
2014-07-11 |
2017-08-22 |
Applied Materials, Inc. |
Extreme ultraviolet capping layer and method of manufacturing and lithography thereof
|
US9612522B2
(en)
|
2014-07-11 |
2017-04-04 |
Applied Materials, Inc. |
Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor
|
US9581889B2
(en)
|
2014-07-11 |
2017-02-28 |
Applied Materials, Inc. |
Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor
|
US9581890B2
(en)
*
|
2014-07-11 |
2017-02-28 |
Applied Materials, Inc. |
Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof
|
US10031411B2
(en)
*
|
2014-11-26 |
2018-07-24 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Pellicle for EUV mask and fabrication thereof
|
US9709884B2
(en)
*
|
2014-11-26 |
2017-07-18 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
EUV mask and manufacturing method by using the same
|
US9471866B2
(en)
|
2015-01-05 |
2016-10-18 |
Tyco Fire and Securtiy GmbH |
Anti-theft system used for customer service
|
KR101726045B1
(ko)
|
2015-06-04 |
2017-04-13 |
한양대학교 산학협력단 |
극자외선 노광 공정용 마스크, 및 그 제조 방법
|
TWI694304B
(zh)
|
2015-06-08 |
2020-05-21 |
日商Agc股份有限公司 |
Euv微影術用反射型光罩基底
|
KR101829604B1
(ko)
|
2015-08-17 |
2018-03-29 |
주식회사 에스앤에스텍 |
극자외선용 포토마스크 및 그 제조방법
|
US9673042B2
(en)
|
2015-09-01 |
2017-06-06 |
Applied Materials, Inc. |
Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
|
US20170092533A1
(en)
|
2015-09-29 |
2017-03-30 |
Applied Materials, Inc. |
Selective silicon dioxide deposition using phosphonic acid self assembled monolayers as nucleation inhibitor
|
US10163629B2
(en)
|
2015-11-16 |
2018-12-25 |
Applied Materials, Inc. |
Low vapor pressure aerosol-assisted CVD
|
US9791771B2
(en)
*
|
2016-02-11 |
2017-10-17 |
Globalfoundries Inc. |
Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure
|
CN109075021B
(zh)
|
2016-03-03 |
2023-09-05 |
应用材料公司 |
利用间歇性空气-水暴露的改良自组装单层阻挡
|
US10061191B2
(en)
|
2016-06-01 |
2018-08-28 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
High durability extreme ultraviolet photomask
|
TWI774375B
(zh)
|
2016-07-27 |
2022-08-11 |
美商應用材料股份有限公司 |
具多層吸收劑的極紫外遮罩坯料及製造方法
|
TWI763686B
(zh)
|
2016-07-27 |
2022-05-11 |
美商應用材料股份有限公司 |
具有合金吸收劑的極紫外線遮罩坯料、製造極紫外線遮罩坯料的方法以及極紫外線遮罩坯料生產系統
|
JP6863169B2
(ja)
|
2017-08-15 |
2021-04-21 |
Agc株式会社 |
反射型マスクブランク、および反射型マスク
|
EP3454119B1
(en)
|
2017-09-09 |
2023-12-27 |
IMEC vzw |
Euv absorbing alloys
|