JP2023027212A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 151
- 239000012535 impurity Substances 0.000 claims abstract description 14
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
Description
Claims (7)
- 第1導電形の第1半導体層を含む半導体部と、
前記半導体部の表面上に設けられた第1電極と、
前記半導体部の前記表面側に設けられた第1トレンチの内部に配置され、第1絶縁膜を介して前記半導体部から電気的に絶縁された第1制御電極と、
前記半導体部の前記表面側において、前記第1トレンチに隣接した第2トレンチの内部に配置され、第2絶縁膜を介して前記半導体部から電気的に絶縁された第2制御電極と、
前記半導体部の前記表面上に第3絶縁膜を介して設けられ、前記第1制御電極および前記第2制御電極に電気的に接続された第2電極と、
を備え、
前記第2電極は、前記第1電極から離間して配置され、
前記第1制御電極および前記第2制御電極は、前記半導体部と前記第1電極との間に位置する第1部分と、前記半導体部と前記第2電極との間に位置する第2部分と、前記第1部分および前記第2部分につながった第3部分と、をそれぞれ有し、
前記半導体部は、前記第1制御電極と前記第2制御電極との間に設けられた、第2導電形の第2半導体層と、第1導電形の第3半導体層と、第2導電形の第4半導体層と、をさらに含み、
前記第2半導体層は、前記第1半導体層上に設けられ、前記第1制御電極および前記第2制御電極の前記第1部分、前記第3部分および前記第2部分に沿って延在し、
前記第3半導体層は、前記第2半導体層と前記第1電極との間に選択的に設けられ、
前記第4半導体層は、前記第2半導体層上に選択的に設けられ、前記第1制御電極および前記第2制御電極の延在方向に、前記第1制御電極および前記第2制御電極の前記第3部分および前記第2部分に沿って延在し、前記第2半導体層の第2導電形不純物よりも高濃度の第2導電形不純物を含む半導体装置。 - 前記第1トレンチの内部に設けられ、前記第1制御電極と前記第1半導体層との間に位置する第1フィールドプレートと、
前記第2トレンチの内部に設けられ、前記第2制御電極と前記第1半導体層との間に位置する第2フィールドプレートと、
をさらに備えた請求項1記載の半導体装置。 - 前記第1フィールドプレートは、前記第1制御電極および前記第2制御電極の延在方向である第1方向において、前記第1制御電極よりも外側に位置する第1端部を有し、
前記第2フィールドプレートは、前記第1方向において、前記第2制御電極よりも外側に位置する第2端部を有し、
前記第2半導体層および前記第4半導体層は、前記第1制御電極および前記第2制御電極よりも前記第1方向に突出した部分をそれぞれ含む請求項2記載の半導体装置。 - 前記第4半導体層は、前記第2半導体層と前記第1電極との間に位置する部分を含み、前記第1電極に電気的に接続される請求項1~3のいずれか1つに記載の半導体装置。
- 前記第2電極は、前記第3絶縁膜中に延び、前記第1制御電極および前記第2制御電極のそれぞれの第3部分に電気的に接続された部分を含む請求項1~4のいずれか1つに記載の半導体装置。
- 前記第1絶縁膜および前記第2絶縁膜は、前記第1制御電極から前記第2制御電極に向かう第2方向における、前記第2半導体層と前記第1部分との間に位置する部分の第1膜厚と、前記第2半導体層と前記第2部分との間に位置する部分の第2膜厚と、前記第2半導体層と前記第3部分との間に位置する部分の第3膜厚と、をそれぞれ有し、
前記第1膜厚、前記第2膜厚および前記第3膜厚は、同一である請求項1~5のいずれか1つに記載の半導体装置。 - 前記第1絶縁膜および前記第2絶縁膜は、前記第1制御電極から前記第2制御電極に向かう第2方向における、前記第2半導体層と前記第1部分との間に位置する部分の第1膜厚と、前記第2半導体層と前記第2部分との間に位置する部分の第2膜厚と、前記第2半導体層と前記第3部分との間に位置する部分の第3膜厚と、をそれぞれ有し、
前記第1膜厚は、前記第2膜厚および前記第3膜厚よりも薄い請求項1~5のいずれか1つに記載の半導体装置。
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