JP2023023898A - 半導体基板、半導体ウエハ、及び半導体ウエハの製造方法 - Google Patents
半導体基板、半導体ウエハ、及び半導体ウエハの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 114
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 45
- 238000009826 distribution Methods 0.000 claims abstract description 41
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 31
- 230000007547 defect Effects 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 27
- 239000002994 raw material Substances 0.000 claims description 12
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 description 46
- 235000012431 wafers Nutrition 0.000 description 36
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 19
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- 239000000460 chlorine Substances 0.000 description 11
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 6
- 238000012937 correction Methods 0.000 description 5
- 238000010410 dusting Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 3
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Abstract
Description
[2]上記[1]に記載の半導体基板と、前記半導体基板の前記成長下地面上の、HVPE法の原料に由来するClを含む酸化ガリウム系半導体の単結晶からなるエピタキシャル膜と、を備え、前記エピタキシャル膜中のエッチピットとして現れる結晶欠陥の密度が5×104cm-3未満である、半導体ウエハ。
[3]前記エピタキシャル膜がアズグロウンの状態であり、前記エピタキシャル膜の70面積%以上の連続した領域において、膜厚の分布が±10%未満である、上記[2]に記載の半導体ウエハ。
[4]前記エピタキシャル膜が意図的に添加されたドナーを含まず、前記エピタキシャル膜のドナー濃度の分布が±40%未満である、上記[2]又は[3]に記載の半導体ウエハ。
[5]前記エピタキシャル膜の表面の70面積%以上の連続した領域において、前記エピタキシャル膜の表面から前記半導体基板の表面まで達するピットの面内密度が、0.1個/cm2以下である、上記[2]~[4]のいずれか1項に記載の半導体ウエハ。
[6]少なくとも一方の主面を結晶の成長下地面とする、酸化ガリウム系半導体の単結晶からなり、直径が2インチ以上である半導体基板を用意する工程と、前記半導体基板の前記成長下地面上に、酸化ガリウム系半導体の単結晶をHVPE法によりエピタキシャル成長させて、エピタキシャル膜を形成する工程と、を含み、前記成長下地面が(001)面であり、前記成長下地面の70面積%以上の連続した領域において、[010]方向のオフ角が、-0.3°よりも大きくかつ-0.01°以下の範囲、又は0.01°以上かつ0.3°よりも小さい範囲内にあり、前記成長下地面の前記領域において、[001]方向のオフ角が、-1°以上かつ1°以下の範囲内にある、半導体ウエハの製造方法。
(半導体ウエハの構成)
図1は、本発明の実施の形態に係る半導体ウエハ1の垂直断面図である。半導体ウエハ1は、酸化ガリウム系半導体の単結晶からなる半導体基板10と、半導体基板10の成長下地面11上にエピタキシャル成長により形成された、酸化ガリウム系半導体の単結晶からなるエピタキシャル膜20を備える。
本発明の実施の形態に係る半導体ウエハ1の製造方法は、少なくとも一方の主面を結晶の成長下地面11とする、酸化ガリウム系半導体の単結晶からなり、直径が2インチ以上である半導体基板10を用意する工程と、半導体基板10の成長下地面11上に、酸化ガリウム系半導体の単結晶をHVPE法によりエピタキシャル成長させて、エピタキシャル膜20を形成する工程と、を含む。
上記実施の形態によれば、半導体基板10の成長下地面11のオフ角を所定の範囲内に納めることにより、膜厚分布及びドナー濃度分布が小さくかつ結晶欠陥の密度が小さいエピタキシャル膜20をHVPE法により成膜することができる。
Claims (6)
- 少なくとも一方の主面を結晶の成長下地面とする半導体基板であって、
酸化ガリウム系半導体の単結晶からなり、
前記成長下地面が(001)面であり、
前記成長下地面の70面積%以上の連続した領域において、[010]方向のオフ角が、-0.3°よりも大きくかつ-0.01°以下の範囲、又は0.01°以上かつ0.3°よりも小さい範囲内にあり、
前記成長下地面の前記領域において、[001]方向のオフ角が、-1°以上かつ1°以下の範囲内にあり、
直径が2インチ以上である、
半導体基板。 - 請求項1に記載の半導体基板と、
前記半導体基板の前記成長下地面上の、HVPE法の原料に由来するClを含む酸化ガリウム系半導体の単結晶からなるエピタキシャル膜と、
を備え、
前記エピタキシャル膜中のエッチピットとして現れる結晶欠陥の密度が5×104cm-3未満である、
半導体ウエハ。 - 前記エピタキシャル膜がアズグロウンの状態であり、
前記エピタキシャル膜の70面積%以上の連続した領域において、膜厚の分布が±10%未満である、
請求項2に記載の半導体ウエハ。 - 前記エピタキシャル膜が意図的に添加されたドナーを含まず、
前記エピタキシャル膜のドナー濃度の分布が±40%未満である、
請求項2又は3に記載の半導体ウエハ。 - 前記エピタキシャル膜の表面の70面積%以上の連続した領域において、前記エピタキシャル膜の表面から前記半導体基板の表面まで達するピットの面内密度が、0.1個/cm2以下である、
請求項2~4のいずれか1項に記載の半導体ウエハ。 - 少なくとも一方の主面を結晶の成長下地面とする、酸化ガリウム系半導体の単結晶からなり、直径が2インチ以上である半導体基板を用意する工程と、
前記半導体基板の前記成長下地面上に、酸化ガリウム系半導体の単結晶をHVPE法によりエピタキシャル成長させて、エピタキシャル膜を形成する工程と、
を含み、
前記成長下地面が(001)面であり、
前記成長下地面の70面積%以上の連続した領域において、[010]方向のオフ角が、-0.3°よりも大きくかつ-0.01°以下の範囲、又は0.01°以上かつ0.3°よりも小さい範囲内にあり、
前記成長下地面の前記領域において、[001]方向のオフ角が、-1°以上かつ1°以下の範囲内にある、
半導体ウエハの製造方法。
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PCT/JP2022/029844 WO2023013696A1 (ja) | 2021-08-06 | 2022-08-03 | 半導体基板、半導体ウエハ、及び半導体ウエハの製造方法 |
CN202280054928.0A CN117795654A (zh) | 2021-08-06 | 2022-08-03 | 半导体基板、半导体晶片以及半导体晶片的制造方法 |
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