JP2023020503A - シリコン単結晶の製造方法及び単結晶引上装置 - Google Patents

シリコン単結晶の製造方法及び単結晶引上装置 Download PDF

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Publication number
JP2023020503A
JP2023020503A JP2021125900A JP2021125900A JP2023020503A JP 2023020503 A JP2023020503 A JP 2023020503A JP 2021125900 A JP2021125900 A JP 2021125900A JP 2021125900 A JP2021125900 A JP 2021125900A JP 2023020503 A JP2023020503 A JP 2023020503A
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JP
Japan
Prior art keywords
dopant
single crystal
silicon
silicon single
shaped
Prior art date
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Pending
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JP2021125900A
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English (en)
Japanese (ja)
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JP2023020503A5 (de
Inventor
真吾 成松
Shingo Narimatsu
高志 石川
Takashi Ishikawa
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GlobalWafers Japan Co Ltd
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GlobalWafers Japan Co Ltd
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Publication date
Application filed by GlobalWafers Japan Co Ltd filed Critical GlobalWafers Japan Co Ltd
Priority to JP2021125900A priority Critical patent/JP2023020503A/ja
Priority to DE112022003764.4T priority patent/DE112022003764T5/de
Priority to PCT/JP2022/012659 priority patent/WO2023007830A1/ja
Priority to TW111124170A priority patent/TWI858345B/zh
Publication of JP2023020503A publication Critical patent/JP2023020503A/ja
Publication of JP2023020503A5 publication Critical patent/JP2023020503A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2021125900A 2021-07-30 2021-07-30 シリコン単結晶の製造方法及び単結晶引上装置 Pending JP2023020503A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021125900A JP2023020503A (ja) 2021-07-30 2021-07-30 シリコン単結晶の製造方法及び単結晶引上装置
DE112022003764.4T DE112022003764T5 (de) 2021-07-30 2022-03-18 Verfahren zur Herstellung von Silizium-Einkristallen, und Einkristall-Ziehvorrichtung
PCT/JP2022/012659 WO2023007830A1 (ja) 2021-07-30 2022-03-18 シリコン単結晶の製造方法及び単結晶引上装置
TW111124170A TWI858345B (zh) 2021-07-30 2022-06-29 單晶矽的製造方法以及單晶提拉裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021125900A JP2023020503A (ja) 2021-07-30 2021-07-30 シリコン単結晶の製造方法及び単結晶引上装置

Publications (2)

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JP2023020503A true JP2023020503A (ja) 2023-02-09
JP2023020503A5 JP2023020503A5 (de) 2024-03-27

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JP2021125900A Pending JP2023020503A (ja) 2021-07-30 2021-07-30 シリコン単結晶の製造方法及び単結晶引上装置

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JP (1) JP2023020503A (de)
DE (1) DE112022003764T5 (de)
WO (1) WO2023007830A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116288658A (zh) * 2023-05-22 2023-06-23 苏州晨晖智能设备有限公司 顶部间歇性掺杂的单晶炉及其掺杂方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240279840A1 (en) * 2023-02-21 2024-08-22 Globalwafers Co., Ltd. Methods for preparing a single crystal silicon ingot with reduced radial resistivity variation

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0523580Y2 (de) * 1987-02-27 1993-06-16
JPH01282194A (ja) * 1988-01-19 1989-11-14 Osaka Titanium Co Ltd 単結晶製造方法
JP2550739B2 (ja) 1990-02-23 1996-11-06 住友金属工業株式会社 結晶成長方法
JP2754103B2 (ja) * 1991-10-09 1998-05-20 信越半導体株式会社 種結晶を用いたドープ剤の添加方法
JP4380204B2 (ja) 2003-04-10 2009-12-09 株式会社Ｓｕｍｃｏ シリコン単結晶及び単結晶育成方法
JP6299543B2 (ja) * 2014-09-18 2018-03-28 信越半導体株式会社 抵抗率制御方法及び追加ドーパント投入装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116288658A (zh) * 2023-05-22 2023-06-23 苏州晨晖智能设备有限公司 顶部间歇性掺杂的单晶炉及其掺杂方法
CN116288658B (zh) * 2023-05-22 2023-10-24 苏州晨晖智能设备有限公司 顶部间歇性掺杂的单晶炉及其掺杂方法

Also Published As

Publication number Publication date
TW202314062A (zh) 2023-04-01
DE112022003764T5 (de) 2024-05-29
WO2023007830A1 (ja) 2023-02-02

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