JP2023003153A - 露光装置、露光方法および物品の製造方法 - Google Patents

露光装置、露光方法および物品の製造方法 Download PDF

Info

Publication number
JP2023003153A
JP2023003153A JP2021104157A JP2021104157A JP2023003153A JP 2023003153 A JP2023003153 A JP 2023003153A JP 2021104157 A JP2021104157 A JP 2021104157A JP 2021104157 A JP2021104157 A JP 2021104157A JP 2023003153 A JP2023003153 A JP 2023003153A
Authority
JP
Japan
Prior art keywords
illumination light
optical system
pattern
wavelength
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021104157A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023003153A5 (enExample
Inventor
雄平 住吉
Yuhei Sumiyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2021104157A priority Critical patent/JP2023003153A/ja
Priority to TW111121379A priority patent/TWI873429B/zh
Priority to KR1020220072669A priority patent/KR20220170754A/ko
Priority to EP22179902.6A priority patent/EP4109179A3/en
Priority to US17/847,037 priority patent/US11835863B2/en
Priority to CN202210717284.0A priority patent/CN115509091A/zh
Publication of JP2023003153A publication Critical patent/JP2023003153A/ja
Priority to US18/499,883 priority patent/US12105430B2/en
Publication of JP2023003153A5 publication Critical patent/JP2023003153A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0221—Testing optical properties by determining the optical axis or position of lenses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/003—Alignment of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
JP2021104157A 2021-06-23 2021-06-23 露光装置、露光方法および物品の製造方法 Pending JP2023003153A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2021104157A JP2023003153A (ja) 2021-06-23 2021-06-23 露光装置、露光方法および物品の製造方法
TW111121379A TWI873429B (zh) 2021-06-23 2022-06-09 曝光設備、曝光方法和產品的製造方法
KR1020220072669A KR20220170754A (ko) 2021-06-23 2022-06-15 노광 장치, 노광 방법 및 물품의 제조 방법
EP22179902.6A EP4109179A3 (en) 2021-06-23 2022-06-20 Exposure apparatus, exposure method, and manufacturing method for product
US17/847,037 US11835863B2 (en) 2021-06-23 2022-06-22 Exposure apparatus, exposure method, and manufacturing method for product
CN202210717284.0A CN115509091A (zh) 2021-06-23 2022-06-23 曝光装置、曝光方法和产品的制造方法
US18/499,883 US12105430B2 (en) 2021-06-23 2023-11-01 Exposure apparatus, exposure method, and manufacturing method for product

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021104157A JP2023003153A (ja) 2021-06-23 2021-06-23 露光装置、露光方法および物品の製造方法

Publications (2)

Publication Number Publication Date
JP2023003153A true JP2023003153A (ja) 2023-01-11
JP2023003153A5 JP2023003153A5 (enExample) 2024-06-19

Family

ID=82117158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021104157A Pending JP2023003153A (ja) 2021-06-23 2021-06-23 露光装置、露光方法および物品の製造方法

Country Status (6)

Country Link
US (2) US11835863B2 (enExample)
EP (1) EP4109179A3 (enExample)
JP (1) JP2023003153A (enExample)
KR (1) KR20220170754A (enExample)
CN (1) CN115509091A (enExample)
TW (1) TWI873429B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI855513B (zh) * 2023-01-18 2024-09-11 南亞科技股份有限公司 曝光設備及其操作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02166717A (ja) * 1988-12-21 1990-06-27 Nikon Corp 露光方法
JPH0758393A (ja) * 1993-08-16 1995-03-03 Toshiba Corp 狭帯域レーザ発振方法及びその装置及びこれを用いたレーザ露光装置
JPH11195607A (ja) * 1997-10-07 1999-07-21 Nikon Corp 投影露光装置、該装置を用いた半導体デバイスの製造方法、及び露光方法
JP2000182952A (ja) * 1998-10-06 2000-06-30 Canon Inc 投影露光装置及びデバイス製造方法
JP2005150174A (ja) * 2003-11-12 2005-06-09 Canon Inc 照明光学系及びそれを有する露光装置
JP2019028223A (ja) * 2017-07-28 2019-02-21 キヤノン株式会社 露光装置及び物品製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669014B2 (ja) * 1986-02-24 1994-08-31 株式会社ニコン 露光装置
JP2619473B2 (ja) 1987-06-17 1997-06-11 株式会社日立製作所 縮小投影露光方法
US6885433B2 (en) * 1990-11-15 2005-04-26 Nikon Corporation Projection exposure apparatus and method
US6078380A (en) * 1991-10-08 2000-06-20 Nikon Corporation Projection exposure apparatus and method involving variation and correction of light intensity distributions, detection and control of imaging characteristics, and control of exposure
US6833904B1 (en) * 1998-02-27 2004-12-21 Nikon Corporation Exposure apparatus and method of fabricating a micro-device using the exposure apparatus
JP2001217174A (ja) * 2000-02-01 2001-08-10 Nikon Corp 位置検出方法、位置検出装置、露光方法、及び露光装置
EP1422562B1 (en) * 2001-08-31 2013-04-17 Canon Kabushiki Kaisha Reticle and optical characteristic measuring method
JP4046961B2 (ja) * 2001-09-03 2008-02-13 キヤノン株式会社 位置検出方法、位置検出装置、露光装置及び露光方法
JP2003151884A (ja) * 2001-11-14 2003-05-23 Nikon Corp 合焦方法、位置計測方法および露光方法並びにデバイス製造方法
US7262110B2 (en) * 2004-08-23 2007-08-28 Micron Technology, Inc. Trench isolation structure and method of formation
EP2109143B1 (en) * 2008-04-09 2013-05-29 Sony Corporation Solid-state imaging device, production method thereof, and electronic device
JP2014179446A (ja) * 2013-03-14 2014-09-25 Sharp Corp 半導体撮像素子およびその製造方法
JP6567005B2 (ja) * 2017-08-31 2019-08-28 キヤノン株式会社 露光装置、調整方法、および、物品製造方法
CN111656284B (zh) * 2018-01-24 2024-04-12 株式会社尼康 曝光装置及曝光方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02166717A (ja) * 1988-12-21 1990-06-27 Nikon Corp 露光方法
JPH0758393A (ja) * 1993-08-16 1995-03-03 Toshiba Corp 狭帯域レーザ発振方法及びその装置及びこれを用いたレーザ露光装置
JPH11195607A (ja) * 1997-10-07 1999-07-21 Nikon Corp 投影露光装置、該装置を用いた半導体デバイスの製造方法、及び露光方法
JP2000182952A (ja) * 1998-10-06 2000-06-30 Canon Inc 投影露光装置及びデバイス製造方法
JP2005150174A (ja) * 2003-11-12 2005-06-09 Canon Inc 照明光学系及びそれを有する露光装置
JP2019028223A (ja) * 2017-07-28 2019-02-21 キヤノン株式会社 露光装置及び物品製造方法

Also Published As

Publication number Publication date
US20240077806A1 (en) 2024-03-07
US11835863B2 (en) 2023-12-05
EP4109179A3 (en) 2023-01-04
TWI873429B (zh) 2025-02-21
US20220413392A1 (en) 2022-12-29
TW202301038A (zh) 2023-01-01
EP4109179A2 (en) 2022-12-28
KR20220170754A (ko) 2022-12-30
CN115509091A (zh) 2022-12-23
US12105430B2 (en) 2024-10-01

Similar Documents

Publication Publication Date Title
JP4497968B2 (ja) 照明装置、露光装置及びデバイス製造方法
JP2006019702A (ja) 照明光学系及び露光装置
JP6567005B2 (ja) 露光装置、調整方法、および、物品製造方法
KR100823405B1 (ko) 노광장치 및 디바이스 제조 방법
JP2005228846A (ja) 露光装置及び方法
US12105430B2 (en) Exposure apparatus, exposure method, and manufacturing method for product
US20080062509A1 (en) Diffractive optical element, exposure apparatus and device manufacturing method
JPH11162837A (ja) 照明装置及びそれを用いた投影露光装置
US12379667B2 (en) Exposure apparatus, exposure method, and manufacturing method for semiconductor device
US11762298B2 (en) Exposure apparatus and method of manufacturing article
JP3958122B2 (ja) 照明装置、およびそれを用いた露光装置、デバイス製造方法
JP2008124308A (ja) 露光方法及び露光装置、それを用いたデバイス製造方法
US11656554B2 (en) Exposure apparatus, exposure method, and method of manufacturing article
JP7446068B2 (ja) 露光装置、および、物品の製造方法
JP4950795B2 (ja) 露光装置、デバイス製造方法及び補正方法
JP2009130065A (ja) 露光装置及びデバイス製造方法
JP2009099879A (ja) 照明光学系、露光装置及びデバイス製造方法
JP2008277347A (ja) 露光装置及びデバイス製造方法

Legal Events

Date Code Title Description
RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20231213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240611

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240611

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250204

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20250701