JP2022541219A5 - - Google Patents

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Publication number
JP2022541219A5
JP2022541219A5 JP2022502569A JP2022502569A JP2022541219A5 JP 2022541219 A5 JP2022541219 A5 JP 2022541219A5 JP 2022502569 A JP2022502569 A JP 2022502569A JP 2022502569 A JP2022502569 A JP 2022502569A JP 2022541219 A5 JP2022541219 A5 JP 2022541219A5
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JP
Japan
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acid
approximately
composition according
note
appendix
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JP2022502569A
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English (en)
Japanese (ja)
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JP7566003B2 (ja
JP2022541219A (ja
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Priority claimed from PCT/US2020/041881 external-priority patent/WO2021011515A1/en
Publication of JP2022541219A publication Critical patent/JP2022541219A/ja
Publication of JP2022541219A5 publication Critical patent/JP2022541219A5/ja
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JP2022502569A 2019-07-15 2020-07-14 エッチング残留物を除去するための組成物、その使用の方法及びその使用 Active JP7566003B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962874477P 2019-07-15 2019-07-15
US62/874,477 2019-07-15
PCT/US2020/041881 WO2021011515A1 (en) 2019-07-15 2020-07-14 Compositions for removing etch residues, methods of using and use thereof

Publications (3)

Publication Number Publication Date
JP2022541219A JP2022541219A (ja) 2022-09-22
JP2022541219A5 true JP2022541219A5 (enExample) 2023-06-29
JP7566003B2 JP7566003B2 (ja) 2024-10-11

Family

ID=74209986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022502569A Active JP7566003B2 (ja) 2019-07-15 2020-07-14 エッチング残留物を除去するための組成物、その使用の方法及びその使用

Country Status (7)

Country Link
US (1) US20220251480A1 (enExample)
EP (1) EP3999621A4 (enExample)
JP (1) JP7566003B2 (enExample)
KR (1) KR102886380B1 (enExample)
CN (1) CN114127230A (enExample)
TW (1) TWI850424B (enExample)
WO (1) WO2021011515A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114846177A (zh) 2019-12-20 2022-08-02 弗萨姆材料美国有限责任公司 Co/cu选择性湿蚀刻剂
TWI794010B (zh) * 2022-02-11 2023-02-21 南亞科技股份有限公司 製造半導體元件的方法

Family Cites Families (25)

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US5563119A (en) * 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
JP3373105B2 (ja) * 1996-03-11 2003-02-04 富士フイルムアーチ株式会社 フォトレジスト剥離液
US6268323B1 (en) * 1997-05-05 2001-07-31 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
JP3757045B2 (ja) * 1997-12-10 2006-03-22 昭和電工株式会社 サイドウォール除去液
US5997658A (en) * 1998-01-09 1999-12-07 Ashland Inc. Aqueous stripping and cleaning compositions
KR20010025043A (ko) 1998-05-18 2001-03-26 바누치 유진 지. 반도체 기판용 스트립팅 조성물
KR100360397B1 (ko) * 1999-11-26 2002-11-18 삼성전자 주식회사 레지스트 제거용 조성물 및 이를 이용한 레지스트 제거 방법
JP3797541B2 (ja) * 2001-08-31 2006-07-19 東京応化工業株式会社 ホトレジスト用剥離液
CN100529014C (zh) * 2002-10-22 2009-08-19 Ekc技术公司 清洗半导体装置的磷酸组合物水溶液
WO2006081406A1 (en) * 2005-01-27 2006-08-03 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US20070179072A1 (en) * 2006-01-30 2007-08-02 Rao Madhukar B Cleaning formulations
CN101432412A (zh) * 2006-03-28 2009-05-13 乔治洛德方法研究和开发液化空气有限公司 用于后cmp清洗工艺的含有防腐剂化合物的清洗溶液
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
EP2082024A4 (en) * 2006-09-25 2010-11-17 Advanced Tech Materials COMPOSITIONS AND METHODS FOR REMOVING A PHOTORESISTANT AGENT FOR RECYCLING A SILICON GALETTE
JP2009075285A (ja) * 2007-09-20 2009-04-09 Fujifilm Corp 半導体デバイスの剥離液、及び、剥離方法
WO2010048139A2 (en) * 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
CN101899369B (zh) * 2009-06-01 2015-10-21 3M创新有限公司 发动机清洁组合物和用于清洁发动机的方法
US8889609B2 (en) * 2011-03-16 2014-11-18 Air Products And Chemicals, Inc. Cleaning formulations and method of using the cleaning formulations
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
US9158202B2 (en) * 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
US10073351B2 (en) 2014-12-23 2018-09-11 Versum Materials Us, Llc Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
CN113214920A (zh) * 2015-03-31 2021-08-06 弗萨姆材料美国有限责任公司 清洁制剂
EP3502225B1 (en) * 2017-12-22 2021-09-01 Versum Materials US, LLC Photoresist stripper
US11180697B2 (en) * 2018-11-19 2021-11-23 Versum Materials Us, Llc Etching solution having silicon oxide corrosion inhibitor and method of using the same
KR102952187B1 (ko) * 2019-06-19 2026-04-14 버슘머트리얼즈 유에스, 엘엘씨 반도체 기판용 세정 조성물

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